Advanced Metallization and Interconnect Systems for Ulsi Applications in 1995
, by Ellwanger, R. C.; Wang, S. Q.Note: Supplemental materials are not guaranteed with Rental or Used book purchases.
- ISBN: 9781558993419 | 155899341X
- Cover: Hardcover
- Copyright: 3/1/1999
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Preface | |
Acknowledgments | |
Dedication | |
Materials Research Society Conference Proceedings | |
Keynote Presentations: Process Technologies for High Performance Multilevel Metallization Systems | p. 3 |
Implementation of Low-k Dielectrics for Interconnect Capacitance Reduction | p. 15 |
Benzocyclobutene (DVS-BCB) Polymer as an Interlayer Dielectric Material | p. 23 |
Low Density Silica Xerogels for Low [kappa] Dielectrics | p. 29 |
Structure-Property Relationships of Thin Films of Fluorinated Polyimide Copolymers for Interlayer Dielectric Applications | p. 37 |
Low Dielectric Constant Fluorine-Doped TEOS-Based Oxide Films | p. 45 |
Performance and Scaling Issues for Sub-Half Micron ULSI Interconnections | p. 53 |
Integration of Low Dielectric Constant Materials with 0.25-[mu]m Aluminum Interconnects | p. 59 |
Process Integration Considerations for a Material with Low Dielectric Constant - Hydrogen Silsesquioxane Based Flowable Oxide | p. 67 |
The Integration of a Low-k Material with High Organic Content in a Non-Etchback Process | p. 75 |
F-Doped SiO[subscript 2] for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection | p. 81 |
Siloxane Spin-On Glass with a Low Dielectric Constant by E-Beam Treatment | p. 89 |
An Evaluation of Fluorine Doped PETEOS on Gap Fill Ability and Film Characterization | p. 95 |
Improvement of the Dielectric Properties of Silsesquioxane Based Spin-On-Polymer by Plasma Curing and Other Novel Techniques | p. 101 |
FLARE, A Low Dielectric Constant Organic Polymer Intermetal Dielectric: Chemistry and Relevant Thermomechanical Properties | p. 107 |
Low Dielectric SiOF Films Using Novel CVD Precursors | p. 115 |
Planarization Performance of Flowable Oxide in the Sub-0.5 [mu]m Regime | p. 121 |
Impact of Low-k ILD and Cu on Circuit Performance | p. 129 |
Sub-Micron Gap Fill and In-Situ Planarisation Using Flowfill Technology | p. 137 |
Cluster Integration of TIN MOCVD Barrier and Copper Deposition for 0,25 [mu]m via Filling Application | p. 145 |
Characterization of Metal Line Resistance Change During Electromigration Test in Al/TiN Layered Interconnects | p. 153 |
The Impact of Negative Overlap between Metal- and Via-Levels on Via Performance: Via Resistance, Via String Yield and Electromigration Resistance | p. 159 |
Comparison of Electromigration Characteristics of Pure Copper and Aluminum Alloy Metallizations | p. 165 |
An Effective Residual Photoresist Strip in a Reducing Ambient - Application to CVD W with a Non-Etchback Siloxane SOG | p. 169 |
Process Integration of a High Density Plasma Film with a Sacrificial Etchback Process for Sub-0.5 [mu]m Multilayer Metal Structures | p. 175 |
Cluster Synthesis and Trench Filling Using Inert Gas Condensation and Ballistic Deposition | p. 181 |
Low-Pressure Chemical Vapor Deposition of Cu-Pd Alloys for Metallization Applications | p. 187 |
Kinetics and Mechanism of Copper CVD Using Cu(HFAC)[subscript 2] and Related Adducts | p. 195 |
High-Speed Chemical Vapor Deposition of Aluminum Using Liquid Delivery System | p. 201 |
Triakylamine Adducts of Dimethylaluminum Hydride as Precursors for CVD Aluminum | p. 207 |
Nucleation Behaviour in Copper CVD from Cu(hfac) TMVS on Different Substrate Materials | p. 213 |
Molecular Dynamics Simulation of Surface Melting for Al Reflow | p. 219 |
Magnetron Sputter Deposition for Interconnect Applications | p. 227 |
Integrated PECVD-Ti/TiN Thin Films for Via Level Applications | p. 233 |
The Improvement of Electrical Properties of TiN Film Deposited by MOCVD Using TDMAT | p. 241 |
Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications | p. 249 |
Characteristics of PECVD Grown W-Nitride Films as Diffusion Barrier Layers for ULSI DRAM Applications | p. 257 |
A Barrier Structure for Contacts Filled with High Pressure Aluminum | p. 265 |
CVD Ti/TiN and High Temperature Al-Plug Process for 0.5 [mu]m Contact | p. 273 |
The Diffusion Barrier Property of TiN and TaN for Cu Metallization | p. 281 |
Ta and Ta(N): A High Reliable Diffusion Barrier and Protection Layer for Copper Metallized Integrated Circuits | p. 291 |
The Effect of Temperature on Non-Collimated and Collimated Ti and TiN Films | p. 299 |
Compositional Variation of Sputtered TiW Thin Films on Topography: TEM/EDX Measurements and SIMBAD Simulations | p. 311 |
Poly-Metal Gate Process - Ultrathin WSiN Barrier Layer Impermeable to Oxidant in-Diffusion During Si Selective Oxidation | p. 317 |
Characterization of Ti-Si-N and W-Si-N Barrier Metals for Cu Interconnects | p. 325 |
Evolution of Microstructure and Texture in Sputter-Deposited TiN Films for Interconnect Applications | p. 333 |
TiN/Ti Barrier Metals for High Pressure Al Plugs | p. 341 |
TiN Films Deposition on the Large Diameter Wafers by ECR Plasma CVD Method | p. 347 |
Low Temperature and Low Pressure Process Metalorganic Chemical Vapor Deposition (MOCVD) of Superior Barrier Layers in Advanced ULSi Devices | p. 355 |
Reliability and Electrical Properties of Poly-Si/TiSix Gate Structures with TiN Barrier Layers | p. 363 |
Growth and Properties of W-B-N Diffusion Barriers Deposited by Chemical Vapor Deposition | p. 369 |
Resistivity Enhancement of CVD TiN with In-Situ Nitrogen Plasma and its Application in Low Resistance Multilevel Interconnects | p. 375 |
Low Pressure Chemical Vapor Deposition of TiN from a New Metalorganic Precursor | p. 381 |
Barrier/Cu Contact Resistivity | p. 387 |
Collimated Ti/TiN Film Deposited in Single Sputtering Chamber | p. 395 |
Reactivity Sputtered Ti-Si-N Diffusion Barriers | p. 401 |
Model Development for the CVD of TiN from Ti(NR[subscript 2])[subscript 4] and NH[subscript 3] | p. 409 |
Electrical Characterization of MOCVD TiN for ULSI Metallization | p. 417 |
Modeling of Intrinsic Stresses of Titanium Thin Films Deposited by Collimated Sputtering | p. 423 |
Materials and Processing Issues in Co and Ti Silicidation for 0.25 [mu]m CMOS Applications and Beyond | p. 431 |
In-Situ X-ray Diffraction Analysis of CoSi[subscript 2] Phase Formation on Single and Polycrystalline Silicon as a Function of Linewidth and Dopant at Rapid Thermal Annealing Rates | p. 439 |
Thermally Stable Ultrathin Cobalt Silicide Film Formation for Deep Submicron Devices | p. 447 |
Mechanism Causing P+/n+ Growth Differences and Encroachment in Selective W-Stacked CMOS Applications | p. 455 |
Metal Dummy Planarization Process and Thin Tungsten Wiring: Application to 0.35 [mu]m CMOS LSI's | p. 461 |
Production-Level Planarized Metallization for Lower Half-Micron Devices Using Tungsten Selective CVD | p. 467 |
A Novel Surface Cleaning Using Chlorinetrifluoride for Selective W-CVD | p. 475 |
Monolayer Nitridation of Silicon Surfaces and its Effects on Tungsten Chemical Vapor Deposition | p. 483 |
A Study of WF[subscript 6] Diffusion and Reaction Kinetics for TiN in W-CVD | p. 491 |
A Model with Surface Reaction and Gas Transport for Tungsten CVD | p. 497 |
Computational Study on Atomistic Dynamics in Selective W-CVD Using SiH[subscript 4] and WF[subscript 6] | p. 505 |
Study on CoSi[subscript 2] Formation on Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy | p. 511 |
Formation of Defects by Silicidation Reactions at Ti/Si Interfaces | p. 517 |
A Methodology for Rapidly Optimizing Step Coverage for LPCVD of Tungsten | p. 523 |
Parametric Study of H[subscript 2] Doped SiH[subscript 4]/WF[subscript 6] Nucleation on Ti/TiN by Tungsten CVD Process | p. 529 |
Modeling of Blanket and Selective Tungsten LPCVD | p. 535 |
Chemical Vapor Deposited Tungsten Interconnect Technology | p. 541 |
The Kinetics of Tungsten Deposition from the H[subscript 2]/WF[subscript 6]-Mixture Studied by In Situ Laser Raman Scattering | p. 549 |
Stress Reduction in Tungsten CVD Films by RTA Post-Treatment of Ti/TiN Bilayers in Ammonia | p. 555 |
Blanket Tungsten Film Deposition Using Programmed Rate CVD | p. 563 |
A High Deposition Rate CVD W Nucleation Process without Ti/TiN Barrier Degradation for 0.25 [mu]m Technology | p. 569 |
Electrical Properties of WGe[subscript x] Contacts on Ti Adhesion Layers | p. 575 |
The Influence of Temperature and Pressure on the Nucleation and Growth of Blanket CVD W on CVD TiN | p. 581 |
Tungsten Interconnections Formed by Selective Deposition of Tungsten on Polysilicon | p. 589 |
Electroless Cu Deposition | p. 597 |
Novel Copper Seeded Electroless Copper Deposition for ULSI Interconnect Technology | p. 607 |
Cost Issues for Back End Interconnect Systems | p. 615 |
Simulation of High Temperature Copper Planarization | p. 621 |
Temperature Dependence of Blanket Aluminum CVD on Si(100) Using TIBA and DMAH | p. 627 |
High Pressure Aluminium Fill | p. 635 |
Aluminum Based Interconnect Systems | p. 645 |
Low Cost High Reliable Metallization Technology Using High Pressure Low Temperature Al Plug | p. 653 |
Utilization of Thin Noble Metal Layers for Selective Via Plugging by Al-MOCVD | p. 661 |
Mirror-Like Surface Morphology of CVD-Al on TiN by CIF[subscript 3] Pretreatment | p. 667 |
A Study on Pyrolysis DMEAA for Selective Deposition of Aluminum | p. 675 |
Fill Mechanism and Film Morphology Studies During Two Step Aluminum Planarization | p. 681 |
Copper Reactive Ion Etching Using Infrared Light Irradiation | p. 691 |
Comparative Evaluation Study of CMP-Copper Interconnect Prepared by Sputter-Reflow with the One Prepared by CVD | p. 701 |
Self-Sputtering of Cu Film Employing Highly Ionized Cu Plasma | p. 709 |
Yield and Defect Characterization of Copper CMP Metallization | p. 717 |
Processing and Chemical-Mechanical Polishing of Dual Damascene Aluminum Interconnect Structures | p. 725 |
Critical Factors for Tungsten Chemical Mechanical Planarization (CMP) of Sub-Half Micron Contacts and Vias | p. 733 |
Comparison of CeO[subscript 2] and SiO[subscript 2] for Planarization of Interlevel Dielectric by Chemical-Mechanical Polishing | p. 741 |
Theoretical Approach to Understanding Copper Chemical Vapor Deposition Mechanism | p. 749 |
Electrical Characterization of Tungsten Vias Planarized by CMP | p. 757 |
Author Index | p. 763 |
Subject Index | p. 767 |
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