Characterization in Compound Semiconductor Processing

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ISBN: 9781606500415 | 1606500414
Cover: Hardcover
Copyright: 12/1/2009

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ComTPund semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deTPsition to dopant introduction. This book reviews the common classes of comTPund semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems.

Preface to the Reissue of the Materials Characterization Series	p. ix
Preface to Series	p. x
Preface to the Reissue of Characterization of Compound Semiconductor Processing	p. xi
Preface	p. xiii
Contributors	p. xv
Characterization of III-V Thin Films for Electronic Devices
Introduction	p. 1
Surface Characterization of GaAs Wafers	p. 2
Dislocations	p. 3
Surface Composition and Chemical State	p. 4
Ion Implantation	p. 6
Epitaxial Crystal Growth	p. 11
Summary	p. 13
III-V Compound Semiconductor Films for Optical Applications
Introduction	p. 17
Growth Rate/Layer Thickness	p. 20
In Situ Growth Monitors	p. 20
Post-Growth Structural Analysis	p. 22
Composition Analysis	p. 23
Impurity and Dopant Analysis	p. 27
Electrical Properties in Optical Structures	p. 28
Optical Properties in Single and Multilayer Structures	p. 33
Interface Properties in Multilayer Structures	p. 35
Summary	p. 37
Introduction	p. 41
In Situ Probes	p. 44
Surface Preparation and Characterization	p. 44
Initial Metal Deposition	p. 45
Subsequent Metal Deposition	p. 48
Unpatterned Test Structures	p. 48
Electrical Characterization	p. 48
Concentration Profiling	p. 49
Electron Microscopy	p. 49
Patterned Test Structures	p. 51
Barrier Height	p. 51
Contact Resistance	p. 53
Morphology	p. 54
Dielectric Insulating Layers
Introduction	p. 57
Oxides and Oxidation	p. 58
Heteromorphic Insulators	p. 60
Chemical Modification of GaAs Surfaces	p. 61
Indium Phosphide-Insulator Interfaces	p. 64
Heterojunction Quasi-Insulator Interfaces	p. 68
Epitaxial Fluoride Insulators	p. 72
Commentary	p. 74
Other Compound Semiconductor Films
Introduction	p. 83
A Focus on HgCdTe	p. 83
Objective and Scope	p. 84
Background	p. 84
Representative Device Structure	p. 86
Substrates and the CdTe Surface (Interface 1)	p. 86
Substrate Quality	p. 86
Substrate Surface Preparation	p. 87
Epitaxial HgCdTe Materials (Between Interfaces 2 and 5)	p. 90
Desired Characteristics of the Active Layers	p. 90
Composition	p. 90
Crystalline Quality	p. 91
Doping	p. 93
Minority Carrier Lifetime	p. 96
Heterojunction Interfaces (Interface 3)	p. 98
Advantages of the Heterojunction	p. 98
Desired Characteristics	p. 98
Characterizations	p. 99
HgCdTe Surface Preparation (Interfaces 4 and 5)	p. 100
Importance of the Chemically Etched Surface	p. 100
Monitoring of the Surface Cleanliness by Ellipsometry	p. 101
Characterization of Thin Native Oxides on HgCdTe by XPS	p. 102
Surface Analysis by UPS	p. 104
Summary	p. 105
Deep Level Transient Spectroscopy: A Case Study On GaAs
Introduction	p. 109
DLTS Technique: General Features	p. 110
Fabrication and Qualification of Schottky Diodes	p. 111
DLTS System	p. 114
DLTS Measurement Procedure	p. 116
Data Analysis	p. 117
DLTS Spectrum	p. 117
Activation Energy for Thermal Emission	p. 118
Trap Densities	p. 120
EL2 Center	p. 121
Summary	p. 121
Appendix: Technique Summaries
Auger Electron Spectroscopy (AES)	p. 127
Ballistic Electron Emission Microscopy (BEEM)	p. 128
Capacitance-Voltage (C-V) Measurements	p. 135
Deep Level Transient Spectroscopy (DLTS)	p. 137
Dynamic Secondary Ion Mass Spectrometry (D-SIMS)	p. 139
Electron Beam Induced Current (EBIC) Microscopy	p. 140
Energy-Dispersive X-Ray Spectroscopy (EDS)	p. 146
Focused Ion Beams (FIBs)	p. 147
Fourier Transform Infrared Spectroscopy (FTIR)	p. 151
Hall Effect Resistivity Measurements	p. 152
Inductively Coupled Plasma Mass Spectrometry (ICPMS)	p. 154
Light Microscopy	p. 155
Low-Energy Electron Diffraction (LEED)	p. 156
Neutron Activation Analysis (NAA)	p. 157
Optical Scatterometry	p. 158
Photoluminescence (PL)	p. 159
Raman Spectroscopy	p. 160
Reflection High-Energy Electron Diffraction (RHEED)	p. 161
Rutherford Backscattering Spectrometry (RBS)	p. 162
Scanning Electron Microscopy (SEM)	p. 163
Scanning Transmission Electron Microscopy (STEM)	p. 164
Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)	p. 165
Sheet Resistance and the Four Point Probe	p. 166
Spreading Resistance Analysis (SRA)	p. 175
Static Secondary Ion Mass Spectrometry (Static SIMS)	p. 183
Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling	p. 184
Total Reflection X-Ray Fluorescence Analysis (TXRF)	p. 185
Transmission Electron Microscopy (TEM)	p. 186
Variable-Angle Spectroscopic Ellipsometry (VASE)	p. 187
X-Ray Diffraction (XRD)	p. 188
X-Ray Fluorescence (XRF)	p. 189
X-Ray Photoelectron Spectroscopy (XPS)	p. 190
Index	p. 191
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Characterization in Compound Semiconductor Processing

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