Chemical Beam Epitaxy and Related Techniques

, by Foord, John S.; Davies, G. J.; Tsang, W. T.

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ISBN: 9780471967484 | 0471967483
Cover: Hardcover
Copyright: 12/8/1997

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Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.

List of Contributors

xiii

(2)

Preface

CHAPTER 1 Chemical Beam Epitaxy: An introduction

(12)

G. J. Davies

J. S. Foord

W. T. Tsang

1.1 Introduction

(3)

1.2 Growth Mechanisms

(2)

1.3 Comparisons of Epitaxial Growth Processes

(5)

References

(2)

CHAPTER 2 Growth Apparatus Design and Safety Considerations

(38)

F. Alexandre

J. L. Benchimol

2.1 Introduction

(1)

2.2 System Configuration

(7)

2.2.1 System Design Considerations

(2)

2.2.2 Sample Loading Chamber

(1)

2.2.3 Growth Chamber

(3)

2.2.4 Gas Handling System

(1)

2.3 Pumping System

(5)

2.3.1 Static Pumps

(2)

2.3.2 Dynamic Pumps

(1)

2.4 Source Injectors

(5)

2.4.1 Low-Temperature Injector

(2)

2.4.2 High-Temperature Injector

(3)

2.4.3 Evaporation Cell for Solid Sources

(1)

2.5 Source Control and Switching

(9)

2.5.1 Mass Flow Control with Carrier Gas

(3)

2.5.2 Mass Flow Control without Carrier Gas

(1)

2.5.3 Pressure Control

(3)

2.5.4 Source Switching

(1)

2.6 Safety Systems

(5)

2.6.1 Hazards of Gas Sources

(1)

2.6.2 Safety Considerations in Equipment Design

(1)

2.6.3 Gas Detection

(1)

2.6.4 Safety Interlocking

(1)

2.6.5 Exhaust Treatment

(1)

2.6.6 Safe Experimental Procedures

(1)

2.7 Future System Developments

(2)

2.7.1 Substrate Stage

(1)

2.7.2 Common Low-Temperature Injector

(1)

2.7.3 Multiwafer Scale-up

(1)

2.8 Conclusions

(1)

References

(3)

CHAPTER 3 Precursors for Chemical Beam Epitaxy

(22)

D. A. Bohling

3.1 Introduction

(2)

3.2 Review of CBE Precursors

(15)

3.2.1 Group III Sources for III-V Compound Semiconductors

(7)

3.2.2 Group V Sources for III-V Compound Semiconductor CBE

(6)

3.2.3 Dopant Sources for Compound Semiconductor CBE

(1)

3.2.4 Chemical Precursors for Silicon and Silicon Dioxide CBE

(1)

3.3 Conclusions

(1)

Acknowledgements

(1)

References

(4)

CHAPTER 4 Reaction Mechanisms for III-V Semiconductor Growth by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics and Film Purities Observed

(20)

J. S. Foord

4.1 Introduction

(1)

4.2 An Approach to the Determination of CBE Growth Mechanisms

(2)

4.2.1 The Chemical Nature and Fluxes of Species Impinging on to and Leaving the Growth Surface

(1)

4.2.2 Structure, Composition and Adsorbates at the Growth Surface

(1)

4.2.3 Dynamic Surface Chemistry

(1)

4.3 The CBE Growth of GaAs from Triethylgallium

(5)

4.3.1 The Occurrence of a Threshold Growth Temperature

(1)

4.3.2 The Decrease in the Growth Rate at High Temperatures

(1)

4.3.3 Spill-over Effects in Carbon Incorporation

(1)

4.3.4 Variation in Growth Rate with III-V Ratio

(1)

4.4 Variation of Growth Rate with Semiconductor Matrix

(3)

4.5 Growth Kinetics Using Other Alkyl Precursors

(4)

4.6 Impurity Incorporation Mechanisms

(3)

4.7 Concluding Remarks

(1)

References

(2)

CHAPTER 5 Growth of GaAs-Based Devices by Chemical Beam Epitaxy

(36)

C. R. Abernathy

5.1 Introduction

(1)

5.2 Heterojunction Bipolar Transistors

(23)

5.2.1 HBT Structures

(1)

5.2.2 Growth of the Base

(6)

5.2.3 The AlGaAs Emitter

102

(3)

5.2.4 The InGaP Emitter

105

(4)

5.2.5 The Collector and Subcollector

109

(1)

5.2.6 Npn Device Results

110

(1)

5.2.7 Selective Epitaxial Growth of Extrinsic Contacts

110

(5)

5.2.8 Pnp HBTs

115

(2)

5.3 Field Effect Transistors

117

(4)

5.3.1 MESFETs

117

(1)

5.3.2 HEMTs

117

(4)

5.4 Optical Devices

121

(2)

5.5 Conclusions

123

(1)

References

123

(6)

CHAPTER 6 CBE InP-Based Materials and Devices

129

(34)

W. T. Tsang

T. H. Chiu

6.1 Introduction

129

(1)

6.2 System Design Considerations

130

(7)

6.2.1 Gas Injectors

132

(1)

6.2.2 Cryopanel

132

(2)

6.2.3 Pumping

134

(1)

6.2.4 Flow Rate Control

135

(2)

6.2.5 Growth Temperature Monitoring

137

(1)

6.3 Growth Mechanism

137

(5)

6.4 Progress in Material Growth

142

(5)

6.4.1 Binary Compound

142

(1)

6.4.2 Ternary and Quaternary Alloys

143

(2)

6.4.3 Gaseous Doping in InP-Based Materials

145

(2)

6.5 Progress in Devices

147

(13)

6.5.1 InGaAs/InGaAsP MQW Lasers and Modulators

147

(6)

6.5.2 Strained InAsP MQW Lasers and Modulators

153

(2)

6.5.3 InP/InGaAsP/InGaAs Avalanche Photodiodes

155

(1)

6.5.4 Monolithic Integrated Photoreceivers

156

(2)

6.5.5 InGaAsP-based Electronic Devices

158

(2)

References

160

(3)

CHAPTER 7 MOMBE of Antimonides and Growth Model

163

(36)

H. Asahi

7.1 Introduction

163

(1)

7.2 MOMBE Growth System

164

(1)

7.3 MOMBE of GaAs and GaSb and Growth Model

165

(16)

7.3.1 Use of TEGa, As(4) and Sb(4) and Growth Model

165

(7)

7.3.2 Use of TEGa, TESb, and TEAs

172

(2)

7.3.3 Use of TEGa, TDMASb, and TDMAAs: Etching Effect

174

(4)

7.3.4 Substrate Orientation Dependence

178

(3)

7.4 AlSb and AlGaSb Growth

181

(5)

7.4.1 Growth with TIBAL

181

(2)

7.4.2 Growth with TMAAL

183

(3)

7.5 III-III-V Alloy Growth

186

(1)

7.5.1 InGaAs

186

(1)

7.5.2 InGaSb

186

(1)

7.6 III-V-V Alloy Growth

187

(4)

7.6.1 InAsSb

187

(3)

7.6.2 GaAsSb

190

(1)

7.7 Selective Growth

191

(3)

7.7.1 Growth on SiO(2) Masked Substrate

191

(2)

7.7.2 Growth on Patterned Substrate

193

(1)

7.8 Concluding Remarks

194

(1)

References

195

(4)

CHAPTER 8 Chemical Beam Epitaxy of Widegap II-VI Compound Semiconductors

199

(32)

A. Yoshikawa

8.1 Introduction

199

(1)

8.2 CBE of Widegap II-VI Compounds

200

(14)

8.2.1 Growth of Zn- and Cd-Based Binary II-VI Compounds

201

(8)

8.2.2 Growth of (Zn,Cd,Mg)(S,Se) Ternary and Quaternary II-VI Compounds and Novel Structures

209

(5)

8.3 Growth Mechanism in CBE of ZnSe and CdSe

214

(9)

8.3.1 An in situ Optical Probing Method Suitable for CBE of II-VI Compounds

214

(5)

8.3.2 Surface Reaction Models in CBE of ZnSe and CdSe

219

(4)

8.4 Impurity Doping and Device Applications

223

(5)

8.4.1 p-Type Doping

223

(2)

8.4.2 n-Type Doping

225

(1)

8.4.3 Blue/green LDs and LEDs

226

(2)

8.5 Summary

228

(1)

References

229

(2)

CHAPTER 9 Gas Source Molecular Beam Epitaxy of Silicon and Related Materials

231

(48)

Y. Shiraki

9.1 Introduction

231

(1)

9.2 Equipment for Silicon Gas Source MBE

232

(2)

9.3 Growth Mechanisms

234

(5)

9.4 Growth of SiGe Alloys

239

(16)

9.4.1 Formation and Control of SiGe Alloys

239

(3)

9.4.2 Surface Segregation

242

(4)

9.4.3 Surfactant-Mediated Growth and Segregant-Assisted Growth (SAG)

246

(5)

9.4.4 Critical Thickness

251

(2)

9.4.5 Ge Composition Dependence

253

(2)

9.5 Growth of SiC

255

(2)

9.6 Doping

257

(3)

9.7 Formation of Si/Ge Heterostructures

260

(7)

9.7.1 Band Structures of Si/Ge Heterostructures

260

(3)

9.7.2 Formation of Superlattices and Quantum Wires

263

(4)

9.8 Selective Growth

267

(3)

9.9 Device Applications of GSMBE

270

(4)

Acknowledgements

274

(1)

References

274

(5)

CHAPTER 10 Gas Source Molecular Beam Epitaxy

279

(20)

L. Goldstein

10.1 Introduction

279

(1)

10.2 Safety Aspects of GSMBE

280

(2)

10.2.1 Organometallic Low-Pressure Group V Sources

280

(1)

10.2.2 Hydride Generator

281

(1)

10.3 Growth of the Quaternary InGaAsP

282

(6)

10.3.1 Influence of Group III Composition

282

(1)

10.3.2 Influence of Growth Rate and Temperature

283

(1)

10.3.3 Immiscibility Growth of GaInAsP on InP

284

(4)

10.4 Growth of Strain Layer Quantum Wells in the InGaAsP System

288

(6)

10.4.1 Interface Control of GaInAsP/InP QW

288

(1)

10.4.2 Strained Layer Multiquantum Wells (InGaAsP)

289

(1)

10.4.3 Compressive Strained Quantum Wells (InGaAsP)

290

(2)

10.4.4 Tensile Strained Quantum Wells (InGaAsP)

292

(1)

10.4.5 Strain Compensated Layers

292

(2)

10.5 Multistep Epitaxy with GSMBE

294

(3)

References

297

(2)

CHAPTER 11 Dopants and Dopant Incorporation

299

(32)

T. Whitaker

T. Martin

11.1 Introduction

299

(1)

11.2 Solid Dopant Sources

300

(1)

11.3 Gaseous Dopant Sources

301

(1)

11.4 Carbon Doping in GaAs/AlGaAs

302

(11)

11.4.1 Carbon Doping with TMGa

303

(1)

11.4.2 Hydrogen Passivation

303

(1)

11.4.3 Halomethane Sources

304

(3)

11.4.4 Carbon Doping in the Presence of TDMAAs

307

(6)

11.5 Mg, Zn, and Be as p-Type Dopants for GaAs/AlGaAs

313

(1)

11.6 n-Type Dopants for GaAs/AlGaAs

313

(4)

11.6.1 Silicon

313

(1)

11.6.2 Tin

313

(2)

11.6.3 Sulphur

315

(2)

11.7 p-Type Doping of InGaAs/InP

317

(2)

11.8 Carbon doping of InGaAs

319

(4)

11.9 n-Type Doping of InGaAs/InP

323

(1)

11.10 Semi-insulating InP by Fe Doping

324

(1)

11.11 Antimonides

325

(1)

11.12 Conclusions

326

(1)

References

326

(5)

CHAPTER 12 Selected Area Epitaxy

331

(64)

H. Heinecke

G. J. Davies

12.1 Introduction

331

(2)

12.2 Growth Techniques

333

(11)

12.2.1 Molecular Beam Epitaxy

333

(2)

12.2.2 Metal Organic Vapour Phase Epitaxy

335

(8)

12.2.3 Chemical Beam Epitaxy/Metal Organic Molecular Beam Epitaxy

343

(1)

12.3 Surface Reaction Mechanisms of Selected Area Epitaxy

344

(11)

12.3.1 The Influence of the Group III Species in Selected Area Epitaxy

345

(4)

12.3.2 The Influence of Group V Species in Selected Area Epitaxy

349

(6)

12.4 The Surface Selective Growth Process in CBE/MOMBE

355

(29)

12.4.1 Surface Orientation Dependence

355

(5)

12.4.2 Planar Selective Area Epitaxy

360

(15)

12.4.3 Embedded Selective Area Epitaxy

375

(9)

12.5 Devices Fabricated Using SAE by CBE/MOMBE

384

(7)

Acknowledgements

391

(1)

References

391

(4)

CHAPTER 13 Chemical Beam Etching

395

(20)

W. T. Tsang

T. H. Chiu

13.1 Introduction

395

(1)

13.2 In situ Etching Technologies

396

(1)

13.3 Chemical Beam Etching of GaAs and InP

397

(6)

13.3.1 Monolayer Control

397

(2)

13.3.2 Surface Chemistry

399

(3)

13.3.3 Etching Kinetics

402

(1)

13.4 Surface Morphology

403

(5)

13.4.1 Continuous Etching

403

(2)

13.4.2 Pulsed Etching

405

(3)

13.5 Etch Cleaning

408

(2)

13.6 Patterned Etch and Regrowth

410

(2)

13.7 Summary

412

(1)

References

413

(2)

CHAPTER 14 Laser-Assisted Epitaxy

415

(22)

H. Sugiura

14.1 Introduction

415

(5)

14.1.1 Background of Photoassisted Epitaxy

415

(1)

14.1.2 Current Status of Photoassisted Epitaxy

416

(1)

14.1.3 Apparatus for Laser-Assisted CBE

417

(2)

14.1.4 Laser Irradiation Effects

419

(1)

14.2 Experimental Results

420

(4)

14.2.1 Binary Epilayers

420

(1)

14.2.2 InGaAs

421

(3)

14.3 InGaAsP

424

(3)

14.3.1 InGaAsP MQW

424

(3)

14.4 Optical Device Applications

427

(7)

14.4.1 Two-Wavelength Laser Diode Array

428

(2)

14.4.2 Multiple-wavelength Laser Diode Array

430

(2)

14.4.3 Photodetector for Multiple Wavelengths

432

(2)

14.5 Summary

434

(1)

References

434

(3)

Index

437

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Chemical Beam Epitaxy and Related Techniques

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Author Biography

Table of Contents

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