High Speed Heterostructure Devices

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. Key Features * The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed * Offers a complete, three-chapter review of resonant tunneling * Provides an emphasis on circuits as well as devices

Quantum Electron Devices: Physics and Applications
GaAs-Gate Semiconductor-Insulator-Semiconductor FET
Unipolar InP-Based Transistors
Complementary Heterostructure FET Integrated Circuits
GaAs-Based and InP-Based Heterostructure Bipolar Transistors
High Frequency Resonant-Tunneling Devices
Resonant-Tunneling Hot-Electron Transistors and Circuits
References
Index
Table of Contents provided by Publisher. All Rights Reserved.

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High Speed Heterostructure Devices

Summary

Table of Contents

Supplemental Materials