Properties of Advanced Semiconductor

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Contributors

xiii

Preface

xv

Gallium Nitride (GaN)

1

(30)

V. Bougrov

M. Levinshtein

S. Rumyantsev

A. Zubrilow

Basic Parameters at 300 K

1

(2)

Band Structure and Carrier Concentration

3

(6)

Temperature Dependences

4

(2)

Dependence on Hydrostatic Pressure

6

(1)

Band Discontinuities at Heterointerfaces

7

(1)

Effective Masses

7

(1)

Donors and Acceptors

8

(1)

Electrical Properties

9

(7)

Mobility and Hall Effect

9

(3)

Two-Dimensional Electron Gas Mobility at AlGaN/GaN Interface

12

(1)

Transport Properties in High Electric Field

13

(2)

Impact Ionization

15

(1)

Recombination Parameters

15

(1)

Optical Properties

16

(6)

Thermal Properties

22

(2)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

24

(7)

References

28

(3)

Aluminum Nitride (AIN)

31

(18)

Yu. Goldberg

Basic Parameters at 300 K

31

(2)

Band Structure and Carrier Concentration

33

(4)

Temperature Dependences

33

(1)

Dependences on Hydrostatic Pressure

34

(1)

Band Discontinuities at Heterointerfaces

35

(1)

Effective Masses

35

(1)

Donors and Acceptors

36

(1)

Electrical Properties

37

(2)

Mobility and Hall Effect

37

(1)

Recombination Parameters

38

(1)

Optical Properties

39

(2)

Thermal Properties

41

(3)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

44

(5)

References

46

(3)

Indium Nitride (InN)

49

(18)

A. Zubrilov

Basic Parameters at 300 K

49

(2)

Band Structure and Carrier Concentration

51

(3)

Temperature Dependences

51

(2)

Dependence on Hydrostatic Pressure

53

(1)

Band Discontinuities at Heterointerfaces

53

(1)

Effective Masses

53

(1)

Donors and Acceptors

54

(1)

Electrical Properties

54

(4)

Mobility and Hall Effect

54

(2)

Transport Properties in High Electric Field

56

(1)

Impact Ionization

57

(1)

Recombination Parameters

58

(1)

Optical Properties

58

(3)

Thermal Properties

61

(2)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

63

(4)

References

65

(2)

Boron Nitride (BN)

67

(26)

S. Rumyantsev

M. Levinshtein

A.D. Jackson

S.N. Mohammad

G.L. Harris

M.G. Spencer

M.S. Shur

Basic Parameters at 300 K

68

(2)

Band Structure and Carrier Concentration

70

(5)

Dependence on Hydrostatic Pressure

72

(1)

Effective Masses

73

(2)

Donors and Acceptors

75

(1)

Electrical Properties

75

(1)

Optical Properties

76

(4)

Thermal Properties

80

(6)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

86

(7)

References

91

(2)

Silicon Carbide (SiC)

93

(56)

Yu. Goldberg

M. Levinshtein

S. Rumyantsev

Basic Parameters at 300 K

93

(3)

Band Structure and Carrier Concentration

96

(10)

Temperature Dependences

97

(3)

Dependence on Hydrostatic Pressure

100

(1)

Energy Gap Narrowing at High Doping Levels

101

(1)

Effective Masses

102

(2)

Donors and Acceptors

104

(2)

Electrical Properties

106

(16)

Mobility and Hall Effect

106

(5)

Transport Properties in High Electric Field

111

(3)

Impact Ionization

114

(5)

Recombination Parameters

119

(3)

Optical Properties

122

(10)

Thermal Properties

132

(6)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

138

(11)

References

143

(6)

Silicon-Germanium (Si1-xGex)

149

(40)

F. Schaffler

Basic Parameters in Unstrained Bulk Material at 300 K

151

(3)

Band Structure and Carrier Concentration

154

(14)

Temperature Dependences

157

(3)

Dependence of Energy Gap on Hydrostatic Pressure

160

(1)

Strain-Dependent Band Discontinuity

160

(4)

Effective Masses

164

(4)

Electrical Properties

168

(5)

Mobility and Hall Effect

168

(1)

Two-Dimensional Electron Gas

169

(2)

Two-Dimensional Hole Gas

171

(2)

Optical Properties

173

(3)

Thermal Properties

176

(3)

Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties

179

(10)

References

186

(3)

Appendixes

189

(4)

1. Basic Physical Constants

189

(1)

2. Periodic Table of the Elements

190

(1)

3. Rectangular Coordinates for Hexagonal Crystal

191

(1)

4. The First Brillouin Zone for Wurtzite Crystal

191

(1)

5. Zinc Blende Structure

192

(1)

6. The First Brillouin Zone for Zinc Blende Crystal

192

(1)

Additional References

193

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Properties of Advanced Semiconductor Materials GaN, AIN, InN, BN, SiC, SiGe

Summary

Author Biography

Table of Contents

Supplemental Materials