Semiconductor Materials Analysis and Fabrication Process Control: Proceedings of Symposium d on Diagnostic Techniques for Semiconductor Materials an
, by Crean, G. M.; Stuck, R.; Woollam, John A.Note: Supplemental materials are not guaranteed with Rental or Used book purchases.
- ISBN: 9780444899088 | 0444899081
- Cover: Hardcover
- Copyright: 6/1/1993
Preface | |
Conference organization | |
Supporting organizations and sponsors | |
Spectroscopic Ellipsometry | |
In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices | p. 1 |
In situ spectral ellipsometry for real-time measurement and control | p. 9 |
In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs | p. 17 |
Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures | p. 22 |
In situ studies of semiconductor processes by spectroellipsometry | p. 27 |
Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering | p. 35 |
Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data | p. 40 |
Round robin investigation of silicon oxide on silicon reference materials for ellipsometry | p. 45 |
Spectroscopic ellipsometric characterization of Si/Si[subscript 1-x]Ge[subscript x] strained-layer supperlattices | p. 52 |
The influence of nanocrystals on the dielectric function of porous silicon | p. 57 |
Secondary Ion Mass Spectroscopy | |
Some examples of depth resolution in SIMS analysis | p. 62 |
Process control for III-V semiconductor device fabrication using mass spectroscopy | p. 70 |
Sputter induced resonant ionization spectroscopy for trace analysis in silicon | p. 75 |
Contamination Monitoring | |
Contamination control and ultrasensitive chemical analysis | p. 79 |
Organic contamination of silicon wafers by buffered oxide etching | p. 88 |
Application of advanced contamination analysis for qualification of wafer handling systems and chucks | p. 93 |
Epioptic Characterization Techniques | |
In situ optical spectroscopy of surfaces and interfaces with submonolayer resolution | p. 99 |
Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy | p. 106 |
Optical second harmonic generation from the Si(111)-Sb interface | p. 111 |
Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride | p. 115 |
Characterization of the Mechanical State of Si Material System | |
On the assessment of local stress distributions in integrated circuits | p. 119 |
Strain analysis of multilayered silicon-based contact structures | p. 126 |
Joint Session on Single Chamber Processing | |
In-process control of silicide formation during rapid thermal processing | p. 131 |
In situ ellipsometry for real-time feedback control of oxidation furnaces | p. 135 |
Photoreflectance of III-V Materials | |
Optical characterization of the electrical properties of processed GaAs | p. 143 |
Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces | p. 153 |
Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates | p. 158 |
Contactless electromodulation for in-situ characterization of semiconductor processing | p. 163 |
Photoreflectance versus ellipsometry investigation of GaAs/Al[subscript 0.3]Ga[subscript 0.7]As MQW's | p. 167 |
Temperature dependence of photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells | p. 172 |
Photoluminescence of Photonic Material Systems | |
Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures | p. 177 |
Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy | p. 182 |
Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence | p. 187 |
Electric field dependence of allowed and forbidden transitions in In[subscript 0.53]Ga[subscript 0.47]As/In[subscript 0.52]Al[subscript 0.48]As single quantum wells by room temperature modulation spectroscopy | p. 191 |
Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE | p. 197 |
Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures | p. 202 |
Characterization of Electronic Properties | |
Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC | p. 208 |
Mapping of the local minority carrier diffusion length in silicon wafers | p. 213 |
Evaluation of the minority carrier lifetime and diffusion coefficient of cast polycrystalline silicon wafers by the dual mercury probe method | p. 218 |
In-situ quality monitoring during the deposition of a-Si:H films | p. 222 |
FTIR and PL of Silicon Material Systems | |
Non-destructive identification of end-of-range damage in ion-implanted and annealed silicon | p. 227 |
Correlation of photoluminescence and nuclear characterization of In-implanted silicon | p. 232 |
Accurate infrared spectroscopy analysis in back-side damaged silicon wafers | p. 236 |
Chemical composition of porous silicon layers studied by IR spectroscopy | p. 240 |
Stoichiometry of oxygen precipitates in silicon | p. 245 |
Optical characterization of semiconductors containing inhomogeneous layers | p. 249 |
Posters | |
Nonlinear recombinations in photoreflectance characterization of silicon wafers | p. 255 |
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement | p. 260 |
Epioptic analysis of the initial ordered growth of Au on Si(111) | p. 266 |
Diagnostics of the silicon-insulator interface structure by optical second-harmonic generation | p. 269 |
Atomic scale simulation of crystal growth applied to the calculation of the photoemission current | p. 273 |
Potential step imaging of interfaces in MBE-grown structures | p. 277 |
Using the metal-oxide-polysilicon-silicon (MOPS) structure to determine LPCVD polysilicon quality | p. 281 |
Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's | p. 285 |
Effect of near-surface damage on C-V measurements of Schottky barrier diodes | p. 291 |
The impact of high-field stressing on C-V characteristics of irradiated gate oxides | p. 295 |
Effects of diffusion-induced defects on the carrier lifetime | p. 301 |
In situ bulk lifetime measurement on silicon with a chemically passivated surface | p. 306 |
Infrared analysis of buried insulator layers formed by ion implantation into silicon | p. 312 |
Electrochemical etching and profiling of silicon | p. 316 |
Author index | p. 322 |
Subject index | p. 327 |
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