Control of Semiconductor Interfaces: Proceedings of the First International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, 8-12
, by Ohdomari, I.; Oshima, M.; Hiraki, A.
- ISBN: 9780444818898 | 0444818898
- Cover: Hardcover
- Copyright: 5/1/1994
| Preface | |
| Committees | |
| Understanding semiconductor interfaces | p. 1 |
| Semiconductor interfaces and their implications to VLSI device reliability | p. 9 |
| The role of hydrogen in metal/Si interface formation | p. 13 |
| Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes | p. 21 |
| Differences in Fermi-level pinning position and thermal stability between epitaxial and non-epitaxial Al/Si interfaces | p. 27 |
| Hydrogen-mediated epitaxial clustering of Si(111) [actual symbol not reproducible] surface studied by TOF-ICISS | p. 33 |
| Schottky limit on ideally H-terminated unpinned silicon(111) surfaces | p. 39 |
| Heavy-ion RBS/ERDA studies on the growth of silver on hydrogen-terminated Si(111) surfaces | p. 45 |
| Transition metal/silicon interfaces: interfacial reaction and electrical properties | p. 51 |
| Contact resistivity and interfacial reaction of V/(001)Si systems | p. 57 |
| Initial stage of InAs MBE growth on GaAs substrate | p. 63 |
| Strain-compensations for interfacial strain and average strain in InGaAs/InAlP highly compressive-strained multiple quantum well structures on InP grown by gas source molecular beam epitaxy | p. 69 |
| Origin of tilt in highly mismatched [actual symbol not reproducible] structures grown by MOVPE | p. 75 |
| Defects formed at the InGaAs/GaAS interface | p. 81 |
| Towards high quality heteroepitaxy on mismatched substrate | p. 87 |
| Oxygen incorporation in GaAs/AlGaAs interfaces grown by molecular beam epitaxy | p. 93 |
| Influence of thin Ge interlayer on anti-phase domain formation in GaAs growth | p. 97 |
| Recent applications of X-ray topography to the study of III-V semiconductors | p. 103 |
| In-situ characterization of AlGaAs/GaAs quantum well interfaces by photoluminescence surface state spectroscopy | p. 109 |
| A new Raman system for in-situ observation of semiconductor crystal growing in flowing gas | p. 115 |
| OMVPE growth: an in situ X-ray analysis | p. 121 |
| Control of surface bonding by realtime monitoring using synchrotron radiation photoelectron spectroscopy | p. 127 |
| Metallic-semiconducting phase transition as observed in ultra thin FeSi[subscript 2]-Si heterostructures | p. 133 |
| Initial features of diamond growth on silicon | p. 143 |
| The electron affinity of CVD diamond with surface modifications | p. 149 |
| Electrical properties of polycrystalline diamond/hydrogenated amorphous silicon interfaces | p. 155 |
| Hydrogen-terminated surfaces of homoepitaxial diamonds and their metal contact properties | p. 161 |
| Nanocrystal growth of InSb on Se-passivated GaAs | p. 167 |
| Barrier heights of 3C- and 6H-SiC Schottky contacts: explanation by the MIGS-and-electronegativity model | p. 169 |
| Development of thermally stable NiGe-based ohmic contacts to n-type GaAs | p. 175 |
| Electrical abruptness of Ni/GaAs interfaces fabricated by in situ photoelectrochemical process | p. 181 |
| Barrier height control and current transport in GaAs and InP Schottky diodes having an ultrathin silicon interface control layer | p. 187 |
| Control of Schottky barrier height of InP by phosphine plasma treatment | p. 193 |
| Novel interlayer as an interfacial reaction suppressor in high GaAs Schottky barrier | p. 199 |
| Interfacial reaction between metal and [actual symbol not reproducible] layer compound | p. 205 |
| Effect of deuterium anneal on SiO[subscript 2]/Si(100) interface traps and MOS tunneling current of ultrathin SiO[subscript 2] films | p. 211 |
| Room temperature oxidation of silicon in the Cu[subscript 3]Si/Si structure | p. 217 |
| Oxidation mechanism of dimers on Si(001) surfaces | p. 221 |
| First-principle calculation of core level energy shifts on the initial oxidation stage of Si(111) surface | p. 227 |
| Doping by single ion implantation | p. 233 |
| Radiation effects induced by high energy He single ions at Si/SiO[subscript 2] interfaces | p. 241 |
| Reactions at semiconductor metal interfaces | p. 247 |
| Microscopic understanding of Schottky barrier height at epitaxial-Al/(111)Si interface | p. 255 |
| Comparison of the spatial variation in the barrier height of Si and GaAs Schottky diodes as measured by ballistic electron emission microscopy | p. 261 |
| Scanning tunneling microscopy of GaAs initial growth on InAs(001) vicinal surfaces | p. 267 |
| Application of silicon interface control layer technique to fabrication of InGaAs metal-insulator-semiconductor FETs | p. 271 |
| Control of silicon nitride-In[subscript 0.53]Ga[subscript 0.47]As interface by ultrathin silicon interface control layer | p. 277 |
| Crystal orientation of orthorhombic BaMgF[subscript 4] films formed on Si substrates | p. 283 |
| Heteroepitaxial growth of Al[subscript 2]O[subscript 3] film on Si by remote rf plasma-excited metalorganic molecular beam epitaxy | p. 289 |
| Performance of plasma deposited tungsten and tungsten nitride as thermally stable Schottky contact to GaAs | p. 295 |
| A new type of atomic ordering in Al[subscript 0.48]In[subscript 0.52]As and relationship between ordering structure and surface reconstruction during gas source MBE growth | p. 301 |
| Dimer model for comprehensive interpretation of selenium-passivated GaAs(001) surface structures | p. 303 |
| Unpinning of GaAs surface Fermi level by atomic layer passivation | p. 305 |
| Contactless electromodulation for the characterization of semiconductor surfaces/interfaces | p. 307 |
| High-spatial resolution analysis of interfaces of semiconductor superlattices by using nm-sized electron probe | p. 315 |
| Three-dimensional structures of sulfur-passivated GaAs(111) and (100) surfaces analyzed by using soft X-ray standing waves | p. 321 |
| Growth mode of Ti-thin films on Si(111) and double heteroepitaxial growth of epi-Si/epi-TiSi[subscript 2]/Si(111) | p. 327 |
| Nondestructive characterization of interfacial microstructures in multilayer semiconductors using synchrotron radiation techniques | p. 333 |
| Surface chemical investigation and topography study of hydrogen baked Si surfaces by infrared spectroscopy and atomic force microscopy | p. 339 |
| Experimental evidence for hole-generated 1/f noise traps in MOS transistors | p. 347 |
| Characteristics of an optoelectronic analogue memory in a GaAs metal-semiconductor-metal photodetector | p. 351 |
| The interface reactions of Cu and Ni with Pb/Sn solder | p. 357 |
| Dopant control and diffusion at the Si/Si[subscript 1-x]Ge[subscript x] interface for high speed heterojunction bipolar transistors | p. 359 |
| Planar to columnar structure transition of MBE grown Si/PtSi/Si(111) double heterostructure | p. 365 |
| Interfaces and interface properties of the Au/Si(111) system | p. 371 |
| Preparation and electronic properties of epitaxial [beta]-FeSi[subscript 2] on Si(111) substrate | p. 377 |
| Native oxide characterization on silicon surfaces | p. 383 |
| Effect of N[superscript +]-polysilicon/SiO[subscript 2] interface on the electrical characteristics of MOS capacitors | p. 389 |
| Nanometer scale plasma polymerized thin film formation and patterning | p. 393 |
| The change of atomic structures and compositional ratios by thermal annealing of 2D Ag-Cu binary adsorbates on the Si(111) surface | p. 399 |
| Roughness control and electrical properties of SiO[subscript 2]/Si(001) interfaces | p. 405 |
| Structural and electrical properties of [superscript 28]Si[superscript +] and [superscript 40]Ar[superscript +] ion implanted epitaxial ReSi[subscript 2] films grown on n-Si(100) substrate | p. 411 |
| Effect of surface termination of Si-cluster on the visible luminescence of porous-Si: a correlation with hydrogen, fluorine and oxygen atoms | p. 417 |
| Metastable phase formation in Al alloy/TiN/Ti/Si systems | p. 423 |
| A study on the interface of LPCVD-W and SiO[subscript 2] | p. 429 |
| Influence of surface charges on four-point-probe resistivity measurement for N-type silicon epitaxial wafers | p. 435 |
| Effect of crystalline orientation on native oxide thickness measured by XPS | p. 441 |
| FT-IR-RAS analysis of the structure of the SiO[subscript 2]/Si interface | p. 447 |
| Study on lattice strain distribution in SiGe/Si system | p. 453 |
| A trial to detect isolated defects in Si induced by single ion implantation | p. 459 |
| Two-dimensional MBE growth characteristics of InGaAs studied by scanning tunneling microscopy | p. 461 |
| Characterization of the interface between Ga[subscript 2]Se[subscript 3] epitaxial layer and (100)GaP substrate by transmission electron microscopy | p. 467 |
| Interface formation between layered semiconductor GaSe and GaAs(001) surface | p. 471 |
| MOCVD growth of GaN on III-V, Si and GaAs-coated Si substrates | p. 477 |
| Atomic incorporation difference between arsenic into GaSb and antimony into GaAs | p. 483 |
| The C-V profile of heavily silicon [delta]-doped GaAs grown by MBE | p. 489 |
| Interdiffusion effect on the band structure of GaAs/Ge superlattice | p. 495 |
| Influence of the cap layer thickness on the interface quality in In[subscript 0.2]Ga[subscript 0.8]As/GaAs single quantum wells | p. 501 |
| InP MIS diode improved by UV and plasma oxidation | p. 507 |
| Observation of InP and GaInAs surfaces after [actual symbol not reproducible] treatment by a scanning tunneling microscope | p. 513 |
| Zinc diffusion into InGaAsP materials using dimethylzinc by open tube technique | p. 519 |
| Open-tube diffusion in GaAs using zinc- and tin-doped spin-on silica films | p. 525 |
| High-resolution TEM evaluation of InAs/InP strained layer superlattices grown on (001)InAs substrates by atomic layer epitaxy | p. 531 |
| Incorporation process of the As atoms on InP(001) surface studied by EXAFS | p. 537 |
| EXAFS study for the 1ML InP[subscript 1-x] As[subscript x] layers on InP(001) | p. 543 |
| Raman scattering of ultrathin InAs layers inserted in GaAs | p. 549 |
| Determination of strain distribution at the GaAsP/GaAs interface by thickness fringe analysis | p. 555 |
| Evaluation of pn junction interfaces in InGaAsP/InGaAsP MQW LD by the C-V method | p. 561 |
| Effects of interface states on C-V profile characterization of semiconductor-semiconductor interfaces of GaAs and related alloys | p. 567 |
| Surface structures of GaAs(001) with selenium adsorbate studied by scanning tunneling microscopy | p. 573 |
| Author index | p. 575 |
| Subject index | p. 579 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
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