Semiconductor Lasers II

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ISBN: 9780123976314 | 0123976316
Cover: Hardcover
Copyright: 12/31/1998

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This volume presents state-of-the-art information on several important material systems and device structures employed in modern semiconductor lasers. The first two chapters discuss several III-V, II-VI, and VI-VI compound semiconductor material systems employed in diode lasers whose emission spectra cover the range from the blue to the mid-infrared. Subsequent chapters describe the elaboration of special laser structures designed for achieving narrow spectral linewidths and wavelength tunability, as well as high power emission devices. The last chapter covers the development of surface emitting diode lasers, particularly vertical cavity structures. In all five chapters, the underlying device physics as well as the state-of-the-art and future trends are discussed. This book introduces the non-expert to the design and fabrication issues involved in the development of these important laser devices. In addition, it reviews the current status of the different material systems and cavity configurations for the benefit of readers engaged in research in this field. Useful background material related to the fundamentals of lasing in semiconductors can be found in the companion volume, Semiconductor Lasers I: Fundamentals.

Preface

Chapter 1 Visible-Wavelength Laser Diodes

(70)

1.1 Introduction

(7)

1.1.1 Relevance of visible wavelength lasers

(2)

1.1.2 Thermal aspects; the temperature-dependence of threshold current

(3)

1.1.3 Beam properties, astigmatism

(1)

1.1.4 High-power operation

(1)

1.1.5 Organization of this Chapter

(1)

1.2 Material systems for visible lasers

(9)

1.2.1 Introduction

(1)

1.2.2 The InGaAIP material system

(4)

1.2.3 The MgZnSSe material system

(2)

1.2.4 The AlInGaN system

(2)

1.2.5 The chalcopyrites

(1)

1.3 Epitaxial growth and technology

(5)

1.3.1 The AlGaInP system

(2)

1.3.2 The MgZnSSe system

(1)

1.3.2.1 Introduction

(1)

1.3.2.2 MBE

(1)

1.3.2.3 OMVPE

(1)

1.3.2.4 Ohmic contacts to p-type ZnSe

(1)

1.3.3 The AlInGaN system

(1)

1.3.3.1 OMVPE/MOMBE

(1)

1.3.3.2 Processing and contacting

(1)

1.4 Quantum wells and strain in laser diodes

(11)

1.4.1 The effects of quantum wells

(3)

1.4.2 The effects of strain

(8)

1.5 InGaAlP laser structures

(22)

1.5.1 Transverse laser structure with bulk InGaP active layer

(1)

1.5.2 InGaAlP strained layer quantum well lasers

(5)

1.5.3 Lateral laser structure: gain-guided lasers

(2)

1.5.4 Electro-optical properties of gain-guided lasers

(1)

1.5.5 Lateral laser structure: index-guided lasers

(2)

1.5.6 Electro-optical properties of index-guided lasers

(1)

1.5.7 High-power operation

(2)

1.5.8 Laser diode operation at shorter wavelengths (630-650nm)

(2)

1.5.9 Temperature dependence of the threshold current

(3)

1.5.10 Reliability of InGaAlP lasers

(4)

1.6 Short-wavelength visible lasers (blue-green and blue)

(7)

1.6.1 II-VI injection lasers

(1)

1.6.1.1 Introduction

(1)

1.6.1.2 The use of CdZnSe strained layer quantum wells and quaternary claddings for blue-green II-VI lasers

(2)

1.6.1.3 Reliability of II-IV lasers

(2)

1.6.2 Gallium nitride-based lasers

(3)

1.7 Conclusions and perspectives toward future developments

(1)

Acknowledgments

(1)

References

(7)

Chapter 2 Long Wavelength (Lambda is greater than 2 (Mu)m) Semiconductor Lasers

(86)

2.1 Introduction

(2)

2.2 Wavelength ranges of various laser materials

(4)

2.3 Growth techniques

(5)

2.4 Compounds and alloys of III-V type

(18)

2.4.1 Brief review of III-V materials for long-wavelength laser applications

(2)

2.4.2 Lasers based on III-V materials

(10)

2.4.3 Type-II heterojunction InGaSbAs/GaSb

(3)

2.4.4 InSbAsP/InAs and some other lasers

(3)

2.5 Compounds and alloys of II-VI type

100

(5)

2.5.1 Brief review of II-VI materials for long-wavelength laser applications

100

(2)

2.5.2 II-VI-based IR semiconductor laser diodes

102

(3)

2.6 Compounds and alloys of IV-VI type

105

(12)

2.6.1 Brief review of IV-VI materials for long-wavelength laser applications

105

(2)

2.6.2 IV-VI-based IR semiconductor laser diodes; comments on history

107

(3)

2.6.3 Homojunction laser diodes of IV-VI type

110

(2)

2.6.4 Heterojunction laser diodes of IV-VI type

112

(2)

2.6.5 Quantum-well IV-VI lasers

114

(3)

2.7 Resume of interband laser properties

117

(13)

2.7.1 Threshold and power characteristics

117

(7)

2.7.2 Mode control and tunability of the laser emission

124

(3)

2.7.3 High-temperature operation

127

(2)

2.7.4 Longest wavelength of interband semiconductor lasers

129

(1)

2.8 Hot-hole (unipolar) semiconductor lasers

130

(2)

2.9 Unipolar tunneling-based semiconductor lasers

132

(3)

2.9.1 Theoretical schemes of the tunneling pumping

132

(2)

2.9.2 Characteristics of quantum cascade lasers

134

(1)

2.10 Nonlinear optical conversion in semiconductors

135

(1)

2.11 Brief review of applications

136

(4)

2.12 Conclusions

140

(2)

Acknowledgments

142

(1)

References

142

(15)

Chapter 3 Single-Mode and Tunable Laser Diodes

157

(102)

3.1 Introduction

157

(1)

3.2 Single-mode laser diodes

158

(35)

3.2.1 The Fabry-Perot laser diode

158

(6)

3.2.2 The distributed Bragg reflector (DBR) laser

164

(4)

3.2.2.1 Coupled-mode theory for DBR laser

168

(5)

3.2.2.2 Purely passive DBR with nonreflecting end mirror

173

(1)

3.2.2.3 Wavelength selectivity of DBR laser

174

(5)

3.2.3 Distributed feedback (DFB) laser diodes

179

(1)

3.2.3.1 Coupled mode theory for DFB laser

179

(7)

3.2.3.2 Spectral linewidth

186

(3)

3.2.3.3 Experimental results

189

(4)

3.3 Wavelength tunable laser diodes

193

(57)

3.3.1 Physical mechanisms for electronic wavelength tuning in laser diodes

194

(2)

3.3.2 Continuously wavelength tunable laser diodes

196

(4)

3.3.2.1 Longitudinally integrated structures

200

(7)

3.3.2.2 Transversely integrated structures

207

(7)

3.3.2.3 Spectral linewidth

214

(5)

3.3.2.4 Physical limitations on tuning range of continuously tunable laser diodes

219

(2)

3.3.3 Discontinously tunable laser diodes

221

(2)

3.3.3.1 DBR-type laser structures

223

(8)

3.3.3.2 Wavelength tunable Y-laser

231

(7)

3.3.3.3 Codirectionally mode-coupled lasers

238

(11)

3.3.3.4 Outlook

249

(1)

3.4 Conclusion

250

(1)

References

251

(8)

Chapter 4 High-Power Semiconductor Lasers

259

(64)

4.1 Introduction

259

(10)

4.1.1 Why high power?

260

(1)

4.1.2 Power limitations

260

(3)

4.1.3 Case study: index-guided single-mode lasers

263

(6)

4.2 Beam quality

269

(26)

4.2.1 Carrier-induced gain and refractive index

269

(2)

4.2.2 The effective index method for finding spatial modes

271

(6)

4.2.3 Gain and index waveguiding

277

(1)

4.2.4 Filamentation and the (Alpha)-parameter

278

(2)

4.2.5 Brightness, Strehl ratio, and M(2)

280

(2)

4.2.5.1 Brightness

282

(1)

4.2.5.2 Strehl ratio

283

(2)

4.2.5.3 M(2)-factor

285

(1)

4.2.6 Case study: monolithic flared amplifier master oscillator power amplifier

286

(9)

4.3 Thermal management

295

(23)

4.3.1 Operating parameters

296

(6)

4.3.2 Thermal resistance

302

(2)

4.3.3 Characteristic temperature, T(o)

304

(1)

4.3.4 Reliability and activation energy

305

(3)

4.3.5 Case study: QUASI-CW 1 cm-wide laser array bars

308

(10)

4.4 Conclusions

318

(1)

Acknowledgments

318

(1)

References

318

(5)

Chapter 5 Surface-Emitting Lasers Abstract

323

(50)

5.1 Introduction

323

(2)

5.2 Configurations of surface-emitting lasers

325

(4)

5.2.1 Categorization of surface-emitting lasers

325

(1)

5.2.2 Vertical-cavity surface emitting lasers

326

(1)

5.2.3 Grating coupled surface emitting lasers

326

(2)

5.2.4 45(Degree) Deflecting-mirror surface-emitting lasers

328

(1)

5.2.5 Folded cavity semiconductor lasers

328

(1)

5.3 Basics of vertical cavity surface-emitting lasers

329

(4)

5.3.1 Threshold current and quantum efficiency

329

(4)

5.4 Fundamental elements for vertical cavity surface-emitting lasers

333

(6)

5.4.1 Dielectric multilayer mirrors

335

(1)

5.4.2 Semiconductor multi-layer structures

335

(1)

5.4.3 Quantum wells for gain medium

336

(1)

5.4.4 Periodic and matched gain structures

336

(1)

5.4.5 Current and optical confinement

336

(3)

5.5 Device design and technology

339

(12)

5.5.1 Long wavelength surface-emitting lasers

339

(5)

5.5.2 GaAlAs/GaAs surface emitting lasers

344

(2)

5.5.3 GaInAs/GaAs surface-emitting lasers

346

(4)

5.5.4 Short-wavelength surface-emitting lasers

350

(1)

5.6 Lasing characteristics of VCSELs

351

(7)

5.6.1 Ultimate performances

351

(2)

5.6.2 Single-mode behavior

353

(1)

5.6.3 Polarization characteristics

354

(2)

5.6.4 Quantum noise

356

(1)

5.6.5 Spontaneous emission control

356

(1)

5.6.6 Photon recycling

357

(1)

5.7 Integrations and applied optical subsystems

358

(6)

5.7.1 Photonic-stack integration

358

(1)

5.7.2 Surface operating devices and monolithic integrations

358

(2)

5.7.3 Two-dimensional arrays of surface-emitting lasers

360

(1)

5.7.4 Applied subsystems

360

(4)

5.8 Summary

364

(1)

References

365

(8)

Index

373

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Semiconductor Lasers II

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