Silicon Heterostructure Devices

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devicescovers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well asA optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performancelimits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

The Big Picture	p. 1-1
A Brief History of the Field	p. 2-1
Overview: SiGe HBTs	p. 3-1
Device Physics	p. 4-1
Second-Order Effects	p. 5-1
Low-Frequency Noise	p. 6-1
Broadband Noise	p. 7-1
Microscopic Noise Simulation	p. 8-1
Linearity	p. 9-1
pnp SiGe HBTs	p. 10-1
Temperature Effects	p. 11-1
Radiation Effects	p. 12-1
Reliability Issues	p. 13-1
Self-Heating and Thermal Effects	p. 14-1
Device-Level Simulation	p. 15-1
SiGe HBT Performance Limits	p. 16-1
Overview: Heterostructure FETs	p. 17-1
Biaxial Strained Si CMOS	p. 18-1
Uniaxial Stressed Si MOSFET	p. 19-1
SiGe-Channel HFETs	p. 20-1
Industry Examples at the State-of-the-Art: Intel's 90 nm Logic Technologies	p. 21-1
Overview: Other Heterostructure Devices	p. 22-1
Resonant Tunneling Devices	p. 23-1
IMPATT Diodes	p. 24-1
Engineered Substrates for Electronic and Optoelectronic Systems	p. 25-1
Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy	p. 26-1
Overview: Optoelectronic Components	p. 27-1
Si-SiGe LEDs	p. 28-1
Near-Infrared Detectors	p. 29-1
Si-Based Photonic Transistor Devices for Integrated Optoelectronics	p. 30-1
Si-SiGe Quantum Cascade Emitters	p. 31-1
Properties of Silicon and Germanium	p. A.1-1
The Generalized Moll-Ross Relations	p. A.2-1
Integral Charge-Control Relations	p. A.3-1
Sample SiGe HBT Compact Model Parameters	p. A.4-1
Index	p. I-1
Table of Contents provided by Ingram. All Rights Reserved.

What is included with this book?

The New copy of this book will include any supplemental materials advertised. Please check the title of the book to determine if it should include any access cards, study guides, lab manuals, CDs, etc.

The Used, Rental and eBook copies of this book are not guaranteed to include any supplemental materials. Typically, only the book itself is included. This is true even if the title states it includes any access cards, study guides, lab manuals, CDs, etc.

FREE SHIPPING

Amazon no longer offers textbook rentals. We do!

Silicon Heterostructure Devices

Summary

Table of Contents

Supplemental Materials