Stress-induced Phenomena in Metallization: Eighth International Workshop on Stress-induced Phenomena in Metallization

, by Zschech, Ehrenfried; Maex, Karen; Ho, Paul S.; Kawasaki, Hisao; Nakamura, Tomoji

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ISBN: 9780735403109 | 0735403104
Cover: Hardcover
Copyright: 2/16/2006

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All papers were peer reviewed. This proceedings presents current research on issues related to stress-induced phenomena in on-chip metal interconnects and solder joints. Stresses arising in on-chip metal interconnects and surrounding dielectric materials due to thermal mismatch, electromigration, microstructure changes or process integration can lead to degradation and failure of microelectronic products. The implementation of low dielectric constant materials into the inlaid copper backend-of-line process has brought new challenges for process integration and reliability. Stress in solder joints can cause metallurgic effects like whisker growth, and subsequently failure. Understanding stress-related phenomena in new materials and structures is critical for development and integration of future metallic structures in microelectronic products.

Scaling of metal interconnects : challenges to functionality and reliability	p. 3
Formation and film characteristics of dual damascene interconnects by bottom-up electroless Cu plating	p. 13
Theory for electromigration failure in Cu conductors	p. 23
Understanding the impact of surface engineering, structure, and design on electromigration through Monte Carlo simulation and in-situ SEM studies	p. 34
Self-formed barrier with Cu-Mn alloy metallization and its effects on reliability	p. 43
Effect of film thickness on the thermo-mechanical behavior of unpassivated Cu(Ag) thin films during thermal cycling	p. 52
Thermal behavior of graded Ta-Si/Ta-Si-N diffusion barriers for Cu metallization	p. 59
Electromigration in gold and single crystalline silver nanowires	p. 65
Chip-packaging interaction and reliability impact on Cu/low k interconnects	p. 73
Fracture of low-k dielectric films and interfaces	p. 83
Biaxial fatigue testing of thin films	p. 92
Thermomechanical behavior of thin metal films under different ambient conditions	p. 98
Adhesion studies in low-k interconnects using cross sectional nanoindentation	p. 104
Mechanical properties of low-k materials on the nanometer scale	p. 110
Chemical bonding in low-k dielectric materials for interconnect isolation : characterization using XAS and EELS	p. 117
Fracture behavior and mechanical properties of porous low-k materials	p. 125
Organic-modified SiO[subscript 2] thin film coatings obtained by the sol-gel method	p. 132
Evaluation of package stress during temperature cycling using metal deformation measurement and FEM simulation	p. 139
Thermal fatigue in copper interconnects	p. 147
Stress in next generation interconnects	p. 157
Statistical analysis of electromigration lifetimes for Cu interconnects	p. 164
Investigation of the influence of the local microstructure of copper interconnects on void formation and evolution during electromigration testing	p. 175
Passivation effects in copper thin films	p. 185
Strain energy effects on texture evolution in thin films : biaxial vs. uniaxial stress state	p. 192
Characterization of vacancy defects in electroplated Cu films by positron annihilation and its impact on stress migration reliability	p. 198
Stresses in copper damascene lines : in-situ measurements and finite element analysis	p. 205
Effect of overburden thickness on the copper microstructure of dual-inlaid interconnect structures	p. 211
X-ray microscopy studies of electromigration in advanced copper interconnects	p. 217
Application of electron tomography for semiconductor device analysis	p. 223
Effects of mechanical properties on the circuit-level reliability of Cu/low-k metallization	p. 231
Simulation of microstructure influence on EM-induced degradation in Cu interconnects	p. 244
Thermo-mechanical modeling of process induced stress : layout effect on stress voiding phenomena	p. 254
Microstructure and stress aspects of electromigration modeling	p. 262
Experimental and numerical studies of stress migration in Cu interconnects embedded in different dielectrics	p. 269
Temperature-dependent stress measurements at inlaid copper interconnect lines	p. 277
X-ray microdiffraction as a probe to reveal flux divergences in interconnects	p. 288
Stresses in laterally structured copper layer systems studied by X-ray diffraction	p. 296
Thermal and electromigration-induced strains in polycrystalline films and conductor lines : X-ray microbeam measurements and analysis	p. 303
Local deformation in Al interconnects measured during thermal cycling and electromigration	p. 310
Residual stresses in Ta, Mo, Al and Pd thin films deposited by E-beam evaporation process on Si and Si/SiO[subscript 2] substrates	p. 317
Electromigration in flip chip solder joints	p. 327
Edge drift of eutectic SnPb lines : electromigration of flip chip solder	p. 339
Tin whisker formation - a stress relieve phenomenon	p. 348
Reliability investigations on SnAg bumps on substrate pads with different pad finish	p. 360
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Stress-induced Phenomena in Metallization: Eighth International Workshop on Stress-induced Phenomena in Metallization

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