Scientific Wet Process Technology for Innovative Lsi/fpd Manufacturing

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ISBN: 9780849335433 | 0849335434
Cover: Hardcover
Copyright: 12/21/2005

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As science pushes closer toward the atomic size scale, new challenges arise to slow the pace of the miniaturization that has transformed our society and fueled the information age. New technologies are necessary to surpass these obstacles and realize the tremendous growth predicted by Moore's law. Assembled from the works of pioneering researchers, Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing presents new developments and technologies for producing the next generation of electronic circuits and displays. This book introduces radical-reaction-based semiconductor manufacturing technologies that overcome the limitations of the existing molecule-reaction-based technologies. It systematically details the procedures and underlying concepts involved in wet process technologies and applications. Following an introduction to semiconductor surface chemical electronics, expert contributors discuss the principles and technology of high-performance wet cleaning; etching technologies and processes; antistatic technology; wet vapor resist stripping technology; and process and safety technologies including waste reclamation, chemical composition control, and ultrapure water and liquid chemical supply systems and materials for fluctuation-free facilities. Currently, large production runs are needed to balance the costs of acquiring and tuning equipment for specialized operating conditions. Scientific Wet Process Technology for Innovative LSI/FPD Manufacturing explains the technologies and processes used to meet the demand for variety and low volumes that exists in today's digital electronics marketplace.

Surface Chemical Electronics at the Semiconductor Surface

(34)

Tadahiro Ohmi

Hydrogen Atomic Model and Molecular Bond

(3)

Behavior of Molecules Adsorbed on the Si Surface: Taking a SiH4-Type Molecule as an Example

(5)

Electronegativity and Energy Level: Change in State of Electrons on Surface due to Terminating Atoms

(6)

Oxidation of Si Surface at Room Temperature

(2)

Selective W Film Deposition by Means of (SiH4 + WF6)

(1)

Redox Potential and Energy Level of Liquid Solution --- Native Oxide Formation on the Si Surface and Metal Contaminant Adhesion and Removal with Solution

(5)

New Era of Si Technology --- (1 1 0) Si Surface

(8)

Conclusion

(4)

References

(2)

Principles of Semiconductor Device Wet Cleaning

(26)

Hitoshi Morinaga

Introduction

(1)

Outline of Current Wet Cleaning and Roles of Major Chemicals

(1)

Functions Essential for Cleaning Trace Contaminants

(1)

Cleaning Mechanism of Metallic Contamination

(12)

Desorption of Metallic Contaminants

(1)

Significance to Prevent Contaminants in the Cleaning Solutions from Redepositing on the Substrate Surface

(1)

Mechanism of Metallic Contaminant Adsorption

(1)

Electrochemical Adsorption of Noble Metals

(3)

Metal Adsorption in Alkali Solution

(1)

Technology to Prevent Metallic Contaminants from Depositing on Surface

(1)

Prevention of Electrochemical Adsorption of Noble Metals

(3)

Prevention of Metallic Contaminant Adsorption in Alkali Solution

(1)

Removal of Metallic Contaminants

(2)

Cleaning Mechanism of Particulate Contamination

(4)

Mechanism of Particle Deposition in Solution

(1)

Technology to Prevent Particle Deposition

(1)

Removal of Particulate Contaminants

(2)

Cleaning Mechanism of Organic Contamination

(1)

Improvement of Cleaning Efficiency

(1)

Optimization of Cleaning Sequence

(1)

Cleaning Issues to Note in Each Stage of ULSI Manufacturing Process

(1)

Cleaning Steps in FEOL

(1)

Cleaning Steps in BEOL

(1)

Summary

(4)

References

(4)

High-Performance Wet Cleaning Technology

(92)

Hiroshi Morita

Akinobu Teramoto

Hitoshi Morinaga

Senri Ojima

Kenichi Mitsumori

Roles of Wet Cleaning Process

(1)

Reference

(1)

Improvement of RCA Cleaning Process

(7)

Current Status of Wet Cleaning Process

(1)

Improvement of RCA Cleaning Process

(1)

Surface Microroughness Caused by Wet Process

(3)

Removal Efficiency of Particles

(1)

Effect of Surface Microroughness on Electrical Characteristics of Thin Oxide

(2)

References

(1)

Effect of Megasonic Irradiation in UPW

(3)

Introduction

(1)

MS-Induced Chemical Reactions in UPW

(2)

MS-Induced Radical Formation in UPW

(1)

References

(1)

Specific Gas Dissolved Functional Water and its Production

(5)

Definition of Functional Water for Wet Cleaning Process

(1)

Idea of H2-UPW Cleaning

(1)

Effects of Dissolved Gas in MS Cleaning

(1)

Particle Removal by Means of Electrolytic Cathode Water

(1)

Idea of Gas-Dissolving-Type H2-UPW

(1)

Adoption of Module with Built-in Gas Permeating Membrane

(1)

Control of Dissolved Gases (Application of Henry's Law)

(2)

Deaeration Using Water Vapor Sweep

(1)

References

(1)

O2-Free Water-Cleaning Technology

(7)

Introduction

(1)

Microroughness of Silicon Surface

(3)

Hydrogen Termination of Silicon Surface

(4)

References

(1)

Total Room-Temperature Cleaning Process

(24)

Total Room-Temperature 4-Step Cleaning Process

(1)

O3-UPW for Wet Cleaning Process

(1)

Introduction

(1)

Cleaning Efficiency of O3-UPW

(1)

Removal of Organic Impurities

(1)

Removal of Metallic Contaminants

(2)

H2-UPW for Wet Cleaning Process

(1)

Introduction

(1)

Relation between Dissolved Hydrogen Concentration and Particle Removal Efficiency

(1)

Removal of Alumina Particle and Silica Particle

(1)

Comparison between APM Cleaning and H2-UPW Cleaning

(1)

Effects of H2-UPW Cleaning on Wafer Surface Microroughness

(2)

Cleaning by UPW with Other Gases than Hydrogen Gas Dissolved

(1)

Particle Removal Mechanism of H2-UPW Cleaning

(1)

Effects of NH3 Spike

(1)

Effects of MS Irradiation

(1)

Effects of Dissolved Hydrogen

(1)

Model of Correlation between Dissolved Hydrogen and MS Irradiation (Surplus Radical Model)

(2)

Verification of Surplus Radical Model

(1)

Applications of H2-UPW Other than Particle Removal

100

(1)

Summary

100

(1)

Total Room-Temperature 4-Step Cleaning Process

101

(1)

Purity of Gas-Dissolved Functional Water

101

(1)

Total Room-Temperature 5-Step Cleaning Process

102

(1)

Design of 5-Step Cleaning Process

102

(2)

Cleaning by HF + O3-UPW (FOM)

104

(2)

Prevention of Decomposition of Surfactant

106

(1)

Strategy in Cleaning Process in BEOL

107

(2)

References

109

(1)

Surfactant and Chelating Agent Technologies for Innovating Semiconductor Cleaning

110

(9)

Challenges in Cleaning Technology to Address Higher-Density ULSI Device

110

(1)

Solutions to the Challenges from the Viewpoint of Cleaning Mechanism

111

(1)

Preventing Metal Cross Contamination

112

(1)

Accelerating Fine Particle Removal without Device Pattern Damage

112

(3)

Single-Wafer Processing

115

(1)

Cleaning of New Material Surface

115

(1)

Challenges of New Material Surface Cleaning

115

(1)

Preventing both Material Corrosion and Contaminant Redeposition

116

(1)

Use of Surfactant as Corrosion Inhibiter

117

(1)

Improvement of Wettability of Hydrophobic Surface

118

(1)

Summary

118

(1)

References

118

(1)

FTIR-ATR Calibration Technique

119

(6)

FTIR-ATR

119

(1)

Preparation of Reference Block with Organic Film Adsorbed to Obtain Calibration Curve for Quantification of Organic Compound Adsorption onto Si Surface: Langmuir--Blodgett Technique

119

(2)

Preparation of Calibration Curve

121

(2)

Adsorption of Organic Compound to Si Surface in Cleanroom Ambience

123

(1)

Summary

124

(1)

References

125

(1)

Balanced Push Pull Nozzle

125

(28)

Introduction

125

(1)

Ultrasonic Cleaning

126

(1)

Necessity of Ultrasonic Cleaning

126

(1)

Fine Particle Elimination Mechanism of Ultrasonic Cleaning

127

(1)

Elimination Principle of Adhesive Particles from Substrates

127

(1)

Possibility of Occurrence of Megasonic and Cavitation

127

(1)

Noise Generation Research at the Time of Megasonic Application

128

(2)

Estimation of Elimination Mechanism of Adhesive Particles from Substrate

130

(1)

BPP Nozzle

131

(1)

Concept of BPP Nozzle

131

(4)

Ultrasonic Oscillator Section

135

(1)

Oscillator Materials

135

(1)

Oscillator Shape

135

(1)

Enclosure Materials and Surface Processing

135

(1)

Board Thickness of Enclosures (Ultrasonic Radiant Boards)

136

(1)

Oscillator and Enclosure (Radiant Board) Bonding

136

(1)

Enclosure (Radiant Board) Structure

136

(1)

Oscillator

137

(1)

Cleaning Fluid Supply /Discharge Section (Rectification Mechanism)

137

(2)

Optimization of the Cleaning Fluid Supply /Discharge Section

139

(1)

Fluid Flow Calculation Method for the Current Plate of the Drilling Tubule Structure

139

(1)

Symbols

139

(1)

Calculation Method

140

(1)

Fluid Flow Calculation Method for the Current Plate Made by Porous Ceramics

140

(1)

Symbols

140

(1)

Assumptions

140

(1)

Calculation Method

141

(1)

Validation of Calculation Results

141

(1)

Structure of the Cleaning Fluid Supply/Discharge Section of the BPP Nozzle for Cleaning of 720 mm Substrate

142

(1)

Optimum BPP Nozzles

143

(1)

Cleaning Capacity of BPP Nozzles

144

(1)

Cleaning Power Evaluation using 6-in. Glass Substrates and Silicon Wafers

144

(1)

Cleaning Evaluation using the 550 mm x 650 mm Glass Substrate

145

(1)

Cause of Performance Differences with Traditional Ultrasonic Equipment

146

(1)

Comparison of Acoustic Pressure

147

(1)

Comparison of Ultrasonic Applied Areas

147

(1)

Ideal Situation of Ultrasonic Cleaning Equipment

148

(1)

Summary

149

(1)

References

150

(3)

Etching of Various SiO2

153

(98)

Tatsuhiro Yabune

Masayuki Miyashita

Hirohisa Kikuyama

Jun Takano

Akinobu Teramoto

Etching of Various SiO2

155

(4)

Introduction

155

(1)

Overview of Dissociation State of Hydrofluoric Acid

156

(1)

Reaction between SiO2 and Hydrogen Fluoride (Reaction Mechanism)

156

(2)

References

158

(1)

Completely Selective and Nonselective Etching

159

(26)

Introduction

159

(1)

Etching Mechanism of Oxides

160

(1)

Etching Mechanism of SiO2 Film

160

(2)

SiO2 Etching with F- Ion

162

(1)

SiO2 Etching with HF2- Ion

163

(8)

Effects of Etching Reaction Products on Etch Rate

171

(1)

Etching Mechanism of BPSG Film

172

(1)

Etching of BPSG Film with Nondissociated (Neutral) HF

172

(3)

Perfectly Selective Etching of BPSG Film

175

(2)

Etching by Etchant with Solvent Featuring Low Relative Dielectric Constant

177

(1)

Nonselective Etching of BPSG Film and SiO2 Film

177

(2)

Perfectly Selective Etching of BPSG Film

179

(4)

Conclusion

183

(1)

References

184

(1)

Contact Cleaning

185

(7)

Introduction

185

(1)

Current Contact Hole Cleaning

186

(2)

Optimum Chemical Composition for Contact Hole Cleaning

188

(3)

Conclusion

191

(1)

References

192

(1)

BHF with Extremely High Etch Rate Applicable to Single-W Processing

192

(8)

Introduction

192

(3)

Etchant to Control HF Dissociation to Achieve Extremely High Etch Rate (H+ Ion Injection to BHF Solution)

195

(4)

Conclusion

199

(1)

References

199

(1)

Surfactant Functions Required for Etchants and Cleaning Solutions

200

(13)

Conditions for Surfactant Selection

200

(4)

Functional Evaluation of Surfactant-Added BHF

204

(1)

Improvement of Wettability on Si Surface and Resist Surface

204

(1)

Reduction of Particles in BHF

205

(2)

Suppression of Particle Adhesion to Si Wafer Surface

207

(2)

Elimination of Organic Residues on Si Surface

209

(1)

Suppression of Increase of Microroughness on Si Wafer Surface

210

(1)

Etching Selectivity

210

(1)

Penetration into Minute Space

211

(1)

Suppression of Foam Generation in BHF

212

(1)

References

213

(1)

HF Gas Etching

213

(18)

Gaseous-Phase Selective Etching of Native Oxide

213

(1)

HF Gas Etching Apparatus

214

(1)

Etching Reaction of HF Gas and SiO2

215

(1)

Selective Etching of Various Silicon Oxide Films

216

(2)

HF Critical Concentration Dependence on Surface State of Various Silicon Oxide

218

(1)

Evaluation of Si Surface after HF Gas Etching of SiO2 Film

218

(2)

Removing of Terminating Fluorine after HF Gas Treatment

220

(2)

Conclusion

222

(1)

Completely Selective Etching of BPSG using an Anhydrous-HF Gas for Fabrication of Gas-Isolated Interconnections

223

(1)

Gas-Isolated Interconnect High-k Gate Dielectric Metal Gate Metal Substrate SOI Structure

223

(2)

Fabrication of Gas-Isolated Interconnections

225

(5)

References

230

(1)

Uniform Etching of Glass Substrate Made from Multiple Components

231

(7)

Introduction

231

(1)

Etching Glass Substrate with HF and BHF

232

(1)

Etch Rate on Glass Substrate

233

(2)

Solubility of Cations Derived from Glass Substrate

235

(1)

Surface Microroughness of Glass Substrate after Etching

235

(2)

Conclusion

237

(1)

References

238

(1)

Extremely Low Etch Rate Control Technology / AFM Calibration

238

(13)

Introduction

238

(1)

Study of Etching Reaction to Develop Etchant Featuring Extremely Low Etch Rate

239

(7)

Conclusion

246

(1)

Standardization of AFM Calibration Method

247

(3)

References

250

(1)

Silicon Etching

251

(20)

Kenichi Mitsumori

Nobuhiko Inoue

Silicon Etching

252

(11)

Introduction

252

(1)

Etching Mechanism of Silicon

252

(1)

Etchant and Etching Features

253

(1)

Experimental Condition

253

(1)

Sample

253

(1)

Reagents

253

(1)

Evaluating Equipments

253

(1)

Etching Methods

253

(1)

HF:HNO3:CH3COOH-Type Etchant

253

(1)

Degradation of Photoresist and Effects on Silicon Surface

253

(2)

HF:HIO3-Type Etchant

255

(1)

Oxidation Power of HIO3

255

(2)

Etching Features of HF:HIO3-Type Etchant

257

(1)

Etching Homogeneity of HF:HIO3-Type Etchant

258

(1)

Stability of HF:HIO3-Type Etchant

259

(1)

Selective Etching Features with Plasma CVD-SiNx Thin Films

260

(1)

Reaction to I2 (Reaction Product)

260

(2)

Summary

262

(1)

References

263

(1)

Anodic Reaction of Silicon

263

(8)

Introduction

263

(1)

SOI Wafer Production Process by using Anodic Reaction of Silicon

264

(1)

Introduction

264

(1)

SOI Wafer Production using Anodic Reaction of Silicon (ELTRAN)

264

(2)

Precise Control of Anodic Reaction of Silicon

266

(1)

Introduction

266

(1)

Formation Mechanism of Porous Silicon and Improvement on Surface Morphology

266

(3)

Discussion on Anodic Reaction of Silicon

269

(1)

Summary

270

(1)

References

270

(1)

Chemical Composition Control Technology

271

(14)

Tatsuhiro Yabune

Masayuki Miyashita

Hirohisa Kikuyama

Jun Takano

Introduction

271

(1)

Current Status and Existing Problems of Cleaning Solution Control

272

(3)

Problems of High-Temperature Wet Process

273

(1)

Effects of Decomposition of Etchant Components

274

(1)

Parameters to Change of Etchant Composition

275

(3)

Evaporation Amount Depended on Humidity and Temperature (Ambience Condition): Relationship between Humidity and Amount of Evaporation

275

(1)

Effects of Chemical Species Consumption through Etching

276

(2)

Carry-In of Chemicals Used at Just before Step and Carry-Over of Etchant

278

(1)

BHF Composition Control

278

(3)

Control of HF---H2O2 Composition

281

(1)

Conclusion

281

(4)

References

282

(3)

Wet Vapor Resist Stripping Technology

285

(8)

Senri Ojima

Tadahiro Ohmi

Introduction

285

(1)

Wet Vapor Resist Stripping Technology

285

(2)

Resist Removal Mechanism

287

(6)

References

291

(2)

Antistatic Technology

293

(22)

Kenichi Mitsumori

Takashi Imaoka

Mechanism of Electrification

294

(13)

Introduction

294

(1)

Main Mechanisms of Electrification

294

(1)

Contact--Frictional Electrification

294

(2)

Peeling Electrification

296

(1)

Combined Electrification of Friction and Peeling

296

(1)

Streaming Electrification

296

(1)

Induction Electrification

296

(1)

Spray Electrification

297

(1)

Spray Electrification and Countermeasures

297

(1)

One of the Generation Processes of Spray Electrification is Development Process

297

(1)

Adverse Effect of Electrostatic on the Device

298

(1)

Adverse Effect of Electrostatic Charge Quantity

299

(2)

Adverse Effect of Electrostatic Impressed Time

301

(1)

Evaluation of Spray Electrification

301

(2)

Electrostatic Countermeasure

303

(1)

Neutralizing Spray Electrification: Neutralization using Ionizer and Soft X-Rays

304

(1)

Neutralizing Spray Electrification: Voltage Control of Pipe

304

(3)

Summary

307

(1)

References

307

(1)

Surface Electrostatic Charge Measurement Technique

307

(8)

Significance of Static Electricity Control in ULSI Manufacturing Process

307

(1)

Principle of Electrostatic Charge Measurement

308

(1)

Electrostatic Charge Measurement and its Applications

308

(1)

Measurement of Electrostatic Charge on PFA Surface (Insulator Surface)

308

(1)

Measurement of Electrostatic Charge on Parallel-Plate Capacitor (Conductor Surface)

309

(1)

Measurement of Dielectric Relaxation of Polymer Materials

310

(1)

Evaluation of Destaticization Capability of IPA

311

(1)

Measurement of Destaticization Capability of IPA Vapor

311

(1)

Destaticization Capability of Liquid-Phase IPA

311

(1)

Voltage of Charged-Up Object and IPA Destaticization Capability

312

(1)

Destaticization Capability of IPA Aqueous Solution

312

(1)

Destaticization Mechanism of IPA Vapor Dry Process

313

(1)

Summary

314

(1)

References

314

(1)

Chemical Waste Reclamation Technology

315

(16)

Hiroshi Sugawara

Takashi Imaoka

Reclamation Technology for Developer (TMAH) Waste

315

(6)

Introduction

315

(1)

Developer Reclamation System and Equipment

316

(2)

Experimental and Results

318

(3)

Commercial Application and Future Challenges

321

(1)

References

321

(1)

Reclamation Technology for HF Waste

321

(10)

Introduction

321

(1)

HF Waste Treatment using Calcite Method

322

(4)

HF Waste Treatment using Crystallization Method

326

(4)

References

330

(1)

Advanced Ultrapure Water and Liquid Chemical Supply System and Materials for Fluctuation-Free Facility

331

(48)

Ikunori Yokoi

Masaaki Nagase

Koji Nishino

Nobukazu Ikeda

Masafumi Kitano

Hiroto Izumi

Tadahiro Ohmi

Ultrapure Water and Gas-Dissolved Water Supply System for Fluctuation-Free Facility

332

(19)

Introduction

332

(1)

Ultrapure Water Supply Technology and Wastewater Reclamation Technology

333

(1)

Pretreatment System

334

(1)

Primary Pure Water System

335

(1)

Ultrapure Water System

336

(1)

Transportation Piping System for Ultrapure Water

337

(1)

Wastewater Reclamation System

338

(1)

Gas-Dissolved Ultrapure Water Supply Technology

338

(1)

Gas-Dissolved Ultrapure Water System

339

(1)

Wafer Cleaning using pH-Controlled Ozonated Ultrapure Water

339

(1)

Wafer Cleaning using pH-Controlled Hydrogenated Ultrapure Water

340

(1)

Element Technology for Ultrapure Water

341

(1)

Piping Application Technology

341

(1)

Build-Up Technology

342

(1)

Water Vibration Preventing Technology

343

(2)

Water Vibration-Controlled Cooling Water System using Hydrogenated Water

345

(3)

Summary

348

(2)

References

350

(1)

Water Hammer-Free System

351

(6)

Outline

351

(1)

Water Hammer Prevention Technology

352

(2)

Vibration-Sensing Water Hammer-Free System

354

(1)

Content Volume Change-Free Valve

355

(2)

Summary

357

(1)

Al2O3 Passivation Technology on Austenitic Stainless Steel for Ozone using Process

357

(9)

Introduction

357

(1)

Experimental

358

(1)

Al2O3 Passivated Film Formation

358

(5)

XRD Pattern of Al2O3 Passivation Film

363

(1)

Resistance to Ozone-Dissolved Water

363

(3)

References

366

(1)

Gas Permeability of Plastic Materials

366

(4)

Introduction

366

(1)

Gas Permeability of Plastic Materials

366

(3)

Conclusion

369

(1)

Reference

369

(1)

Fluoridation Passivation Technology

370

(3)

Introduction

370

(1)

Fluoridation of Electroless-Nickel--Phosphor-Plating Film

370

(2)

Performance of Nickel--Fluoride Film

372

(1)

References

373

(1)

Metallic Surface Fluorocarbon Coating Technology

373

(4)

Introduction

373

(1)

Fluorocarbon CVD on NiF2 Surface

374

(1)

Electrostatic Powder Painting Film Deposition Technology

375

(2)

Future Ultrapure Water Manufacturing Technology

377

(2)

Index

379

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Scientific Wet Process Technology for Innovative Lsi/fpd Manufacturing

Summary

Table of Contents

Supplemental Materials