Chemistry for Electronic Materials: Proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-Mrs Spring Conference Strasbourg,
, by Pauleau, Y.; Wahl, G.; Jensen, K. F.; Hirai, T.Note: Supplemental materials are not guaranteed with Rental or Used book purchases.
- ISBN: 9780444899071 | 0444899073
- Cover: Hardcover
- Copyright: 3/1/1993
Preface | |
Organizers and Sponsors | |
Semiconductor Compounds | |
New metal-organic precursors for growth of GaAs and Al[subscript x]Ga[subscript 1-x]As by chemical beam epitaxy | p. 1 |
Metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview | p. 9 |
Improved GaAs/Ga[subscript 1-x]Al[subscript x]As chemical beam epitaxy using triisopropylgallium | p. 15 |
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by [beta] elimination of specific metal-organic arsenic compounds | p. 21 |
New Group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy | p. 25 |
Selective epitaxial growth of In[subscript 1-x]Al[subscript x]As by metal-organic vapour-phase epitaxy | p. 29 |
A new organoindium precursor for electronic materials | p. 34 |
Growth kinetics during metal-organic chemical vapour deposition of ZnTe | p. 41 |
Silicon Films | |
The selective epitaxial growth of silicon | p. 47 |
In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films | p. 68 |
Silicon deposited by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6]: experiments, modelling and properties | p. 72 |
Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursor | p. 77 |
Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation | p. 82 |
Metallic Films | |
A new metal-organic chemical vapor deposition process for selective copper metallization | p. 87 |
Etching of copper and copper oxide at high rates via generation of volatile copper species | p. 93 |
Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using [beta]-ketoiminato complexes | p. 97 |
Organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition | p. 101 |
Organometallic compounds: the chemist's contribution to new electronic materials | p. 104 |
Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors | p. 108 |
On the growth of epitaxial ultrathin films of [alpha]-Sn on CdTe(110) | p. 112 |
Chemical vapour deposition precursors for metal silicides | p. 118 |
Synthesis of chromium silicide-silicon carbide composite powders | p. 126 |
Chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth | p. 131 |
Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substrates | p. 137 |
Mineral precursor for chemical vapor deposition of Rh metallic films | p. 143 |
Reaction diffusion in Ta/GaAs contacts | p. 147 |
Superconductor Materials | |
Microstructure and cracking in pure and substituted YBa[subscript 2]Cu[subscript 3]O[subscript 7-[delta]] | p. 152 |
Optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and P[subscript O[subscript 2]]-T conditions | p. 157 |
Insulating Materials | |
A model for low pressure chemical vapor deposition in a hot-wall tubular reactor | p. 163 |
Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane | p. 172 |
Molecular simulation: a microscopic approach to study the growth of native silicon oxide | p. 181 |
Silicon nitride elaborated by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6] and NH[subscript 3] at low temperature | p. 185 |
Miscellaneous Studies | |
Heterogeneous systems based on precious metal powders and polymers | p. 190 |
Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation | p. 196 |
Author Index | p. 202 |
Subject Index | p. 204 |
Table of Contents provided by Blackwell. All Rights Reserved. |
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