Chemistry for Electronic Materials: Proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-Mrs Spring Conference Strasbourg,

, by Pauleau, Y.; Wahl, G.; Jensen, K. F.; Hirai, T.

Note: Supplemental materials are not guaranteed with Rental or Used book purchases.

ISBN: 9780444899071 | 0444899073
Cover: Hardcover
Copyright: 3/1/1993

Rent

(Recommended)

$147.77

Term

Due

Price

Semester

Dec 13

$155.55

Quarter

Aug 16

$147.77

Short Term

Jul 2

$140.00

*This item is part of an exclusive publisher rental program and requires an additional convenience fee. This fee will be reflected in the shopping cart.
Buy New

Usually Ships in 3-5 Business Days

$212.52
eBook

Available Instantly

Online: 1825 Days

Downloadable: Lifetime Access

$82.07

Supplemental Materials

Preface
Organizers and Sponsors
Semiconductor Compounds
New metal-organic precursors for growth of GaAs and Al[subscript x]Ga[subscript 1-x]As by chemical beam epitaxy	p. 1
Metal-organic research in semiconductor epitaxy: ESPRIT II-MORSE project overview	p. 9
Improved GaAs/Ga[subscript 1-x]Al[subscript x]As chemical beam epitaxy using triisopropylgallium	p. 15
New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III-V semiconductors: in-situ formation of As-H functionality by [beta] elimination of specific metal-organic arsenic compounds	p. 21
New Group III aluminium and gallium hydride precursors for metal-organic vapour-phase epitaxy	p. 25
Selective epitaxial growth of In[subscript 1-x]Al[subscript x]As by metal-organic vapour-phase epitaxy	p. 29
A new organoindium precursor for electronic materials	p. 34
Growth kinetics during metal-organic chemical vapour deposition of ZnTe	p. 41
Silicon Films
The selective epitaxial growth of silicon	p. 47
In-situ investigations of radical kinetics in the deposition of hydrogenated amorphous silicon films	p. 68
Silicon deposited by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6]: experiments, modelling and properties	p. 72
Chemical reactivity and gas flow dynamics considerations on atmospheric pressure chemical vapor deposition with silane precursor	p. 77
Properties and stability of hydrogenated amorphous silicon films with a low hydrogen content prepared by cyclic chemical vapour deposition and hydrogenation	p. 82
Metallic Films
A new metal-organic chemical vapor deposition process for selective copper metallization	p. 87
Etching of copper and copper oxide at high rates via generation of volatile copper species	p. 93
Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using [beta]-ketoiminato complexes	p. 97
Organic solutions of triphenylphosphine gold complexes: attractive new candidates for gold deposition	p. 101
Organometallic compounds: the chemist's contribution to new electronic materials	p. 104
Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursors	p. 108
On the growth of epitaxial ultrathin films of [alpha]-Sn on CdTe(110)	p. 112
Chemical vapour deposition precursors for metal silicides	p. 118
Synthesis of chromium silicide-silicon carbide composite powders	p. 126
Chemical vapour deposition of tungsten in a UHV system: effect of substrate conditions on the initial stages of growth	p. 131
Studies on the nucleation and growth of chemical-vapor-deposited W on TiN substrates	p. 137
Mineral precursor for chemical vapor deposition of Rh metallic films	p. 143
Reaction diffusion in Ta/GaAs contacts	p. 147
Superconductor Materials
Microstructure and cracking in pure and substituted YBa[subscript 2]Cu[subscript 3]O[subscript 7-[delta]]	p. 152
Optimizing metallo-organic chemical vapour deposition of YBCO films: substrates and P[subscript O[subscript 2]]-T conditions	p. 157
Insulating Materials
A model for low pressure chemical vapor deposition in a hot-wall tubular reactor	p. 163
Growth kinetics and properties of dielectric films synthesized by low pressure chemical vapor deposition from diethylsilane	p. 172
Molecular simulation: a microscopic approach to study the growth of native silicon oxide	p. 181
Silicon nitride elaborated by low pressure chemical vapour deposition from Si[subscript 2]H[subscript 6] and NH[subscript 3] at low temperature	p. 185
Miscellaneous Studies
Heterogeneous systems based on precious metal powders and polymers	p. 190
Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation	p. 196
Author Index	p. 202
Subject Index	p. 204
Table of Contents provided by Blackwell. All Rights Reserved.

Please wait while the item is added to your bag...

FREE SHIPPING

Amazon no longer offers textbook rentals. We do!

Chemistry for Electronic Materials: Proceedings of Symposium C on Chemistry for Electronic Materials of the 1992 E-Mrs Spring Conference Strasbourg,

Table of Contents

Supplemental Materials