Modeling and Design Techniques for RF Power Amplifiers

, by Raghavan, Arvind; Srirattana, Nuttapong; Laskar, Joy

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ISBN: 9780471717461 | 0471717460
Cover: Hardcover
Copyright: 1/9/2008

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The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design.

Preface	p. ix
Introduction	p. 1
Semiconductor Technology and RF Power Amplifier Design	p. 2
Device Modeling	p. 3
Power Amplifier IC Design	p. 4
Power Amplifier Linearity	p. 5
Modulation Schemes	p. 5
Circuit Simulation	p. 9
Load-Pull Measurements	p. 10
References	p. 13
Device Modeling for CAD	p. 15
Introduction	p. 15
Bipolar Junction and Heterojunction Bipolar Transistors	p. 16
Bipolar Device Models	p. 18
The Ebers-Moll Model	p. 18
The Gummel-Poon Model	p. 20
The VBIC Model	p. 25
MEXTRAM	p. 29
HICUM	p. 32
MOSFET Device Physics	p. 35
MOSFET Device Models	p. 38
The Level 1 Model	p. 38
The Level 2 and Level 3 Models	p. 40
BSIM	p. 40
The BSIM2 and HSPICE Level 28 Models	p. 43
BSIM3	p. 44
MOS Model 9 and MOS Model 11	p. 45
BSIM4	p. 45
References	p. 46
Empirical Modeling of Bipolar Devices	p. 49
Introduction	p. 49
Modeling the HBT versus the BJT	p. 49
Parameter Extraction	p. 50
Motivation for an Empirical Bipolar Device Model	p. 51
Physics-Based and Empirical Models	p. 53
Compatibility between Large- and Small-Signal Models	p. 53
Model Construction and Parameter Extraction	p. 54
Current Source Model	p. 54
Current Source Model Parameter Extraction	p. 56
Extraction of Intrinsic Capacitances	p. 58
Extraction of Base Resistance	p. 60
Parameter Extraction Procedure	p. 61
Temperature-Dependent InGaP/GaAs HBT Large-Signal Model	p. 63
Empirical Si BJT Large-Signal Model	p. 71
Extension of the Empirical Modeling Method to the SiGe HBT	p. 77
Summary	p. 83
References	p. 83
Scalable Modeling of RF Mosfets	p. 87
Introduction	p. 87
NQS Effects	p. 88
Distributed Gate Resistance	p. 89
Distributed Substrate Resistance	p. 89
Scalable Modified BSIM3v3 Model	p. 91
Scalability of MOSFET Model	p. 91
Extraction of Small-Signal Model Parameters	p. 94
Scalable Substrate Network Modeling	p. 101
Modified BSIM3v3 Model	p. 116
Summary	p. 120
References	p. 120
Power Amplifier IC Design	p. 123
Introduction	p. 123
Power Amplifier Design Methodology	p. 124
Classes of Operation	p. 125
Performance Metrics	p. 132
Thermal Instability and Ballasting	p. 136
References	p. 138
Power Amplifier Design in Silicon	p. 141
Introduction	p. 141
A 2.4-GHz High-Efficiency SiGe HBT Power Amplifier	p. 142
Circuit Design Considerations	p. 143
Analysis of Ballasting for SiGe HBT Power Amplifiers	p. 146
Harmonic Suppression Filter and Output Match Network	p. 148
Performance of the Power Amplifier Module	p. 150
RF Power Amplifier Design Using Device Periphery Adjustment	p. 153
Analysis of the Device Periphery Adjustment Technique	p. 155
1.9-GHz CMOS Power Amplifier	p. 157
1.9-GHz CDMA/PCS SiGe HBT Power Amplifier	p. 162
Nonlinear Term Cancellation for Linearity Improvement	p. 166
References	p. 169
Efficiency Enhancement of RF Power Amplifiers	p. 173
Introduction	p. 173
Efficiency Enhancement Techniques	p. 174
Envelope Elimination and Restoration	p. 174
Bias Adaptation	p. 175
The Doherty Amplifier Technique	p. 175
Chireix's Outphasing Amplifier Technique	p. 176
The Classical Doherty Amplifier	p. 179
The Multistage Doherty Amplifier	p. 181
Principle of Operation	p. 181
Analysis of Efficiency	p. 186
Practical Considerations	p. 188
Measurement Results	p. 190
References	p. 198
Index	p. 199
Table of Contents provided by Ingram. All Rights Reserved.

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Modeling and Design Techniques for RF Power Amplifiers

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