2007 Device Research Conference
, by Institute of Electrical and Electronics Engineers
- ISBN: 9781424411016 | 1424411017
- Cover: Paperback
- Copyright: 2/19/2008
| Plenary Session | |
| CMOS Integrated Nano-Photonics is now a Commercial Technology | |
| Mobility-Enhanced MOS Device Technologies in Nano-CMOS era | |
| Hybrid CMOS/Nanodevice Circuits: Architectures, Applications, and Device Needs | |
| Thin Film Transistors | |
| Uniform ZnO Thin-Film Transistors by an Ambient Process | |
| Flexible Microwave Single-Crystal Si TFTs with fmax of 5.5 GHz | |
| A 'Bottom-up' Redefinition for Mobility and the Effect of Poor Tube-Tube Contact on the Performance of CNT Nanobundle Thin Film Transistors | |
| Fast ZnO Thin-Film Transistor Circuits | |
| Electrical and chemical stability of polymer transistors | |
| Solution processed OTFT circuits on plastic substrates | |
| Wide Bandgap Devices | |
| GaN Power Devices for Microwave/Switching Applications | |
| Novel 1 kV, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mOcm2 on-state resistance | |
| AlGaN/GaN HEMTs on Diamond Substrate | |
| 10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge | |
| Progress in GaN Performances and Reliability | |
| AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts | |
| Self-Aligned AlGaN/GaN High Electron Mobility Transistors | |
| Analysis of lateral surface leakage in the vicinity of Schottky gates in AlGaN/GaN HEMTs | |
| Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs | |
| Silicon CMOS | |
| Silicon Nanowire Field Effect Devices By Top-Down CMOS Technology | |
| SiGe cantilever channel gate-all-around (GAA) fully depleted (FD) PMOSFET with high-? and metal gate | |
| Hole Transport in Nanoscale p-type MOSFET SOI Devices with High Strain | |
| 3X hole mobility enhancement in epitaxially grown SiGe PMOSFETs on (110) Si substrates with high k/metal gate for hybrid orientation technology | |
| High-Mobility, Low Parasitic Resistance Si/Ge/Si Heterostructure Channel Schottky Source/Drain PMOSFETs | |
| Band to Band Tunneling Study in High Mobility Materials: III-V, Si, Ge and strained SiGe | |
| Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs | |
| Poster Session | |
| Effects of Source Access Resistance on Gate lag in AlGaN/GaN HEMTs and Current Slump Behavior | |
| Low-Voltage Organic Thin-Film Transistors with Improved Stability and Large Transconductance | |
| 4H-SiC RF BJTs with Long Pulse L-band Operation | |
| Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well | |
| SWCNT-SET fabricated by dispersion method with CMC solvent | |
| Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs | |
| Electro-Thermally Coupled Power Optimization for Future Transistors | |
| Dispersion Design of a Left-Handed Microstrip Line with Planar Double-Stub and Split-Ring Structures for Leaky Wave Radiation toward Functional RF Wireless Interconnect | |
| High Power Vertical-structure GaN-based LEDs with Improved Current Spreading and Blocking Designs | |
| Feasibility Study of Composite Dielectric Tunnel Barriers for Flash Memory | |
| Confined Optical Phonon Scattering in p-Silicon Nanowires | |
| Mid-Wavelength Infrared (MWIR) Avalanche Photodiode (APD) using InAs-GaSb type-II Strain layer Superlattice (SLS) | |
| Body Thickness Optimization and Sensitivity Analysis for High Performance FinFETs | |
| Flash Memory Fabricated with Protein-Mediated PbSe Nanocrystal Assembly as Floating Gate | |
| Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current | |
| AlGaN/GaN Bidirectional Power Switch | |
| n- and p-channel TaN/HfO2 MOSFETs on GaAs substrate using a germanium interfacial passivation layer | |
| Hexagonal Prism Blue Laser Diode with Low Threshold Power using Whispering Gallery Mode (WGM) Resonances | |
| Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic | |
| Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study | |
| Schottky Drain AlGaN/GaN HEMTs for mm-wave Applications | |
| Barrier layer downscaling of InAIN/GaN HEMTs | |
| Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study | |
| High Performance ZnO Nanowire FET with ITO Contacts | |
| High Efficiency Oxide-Confined High-Index-Contrast Broad-Area Lasers with Reduced Threshold Current Density and Improved Near-Field Profile | |
| Inversion-type enhancement-mode InP MOSFETs with ALD AI203, HfO2 and HfAIO nanolaminates as high-k gate dielectrics | |
| Barrier Lowering and Widening of Schottky Barrier MOSFETs by Self-Aligned Multiple Workfunction Gate | |
| Reliability of 4H-SiC DMOSFETs Evaluated by Bias Stressing | |
| A 53% High Efficiency GaAs Vertically Integrated Multi-junction Laser Power Converter | |
| Native-Oxide-Confined High Index Contrast InAs Quantum-Dot Laser Diodes | |
| Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs | |
| AlGaN/GaN HEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE | |
| Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors | |
| On-Chip Clocking Scheme for Nanomagnet QCA | |
| Electrical Characterization of Vertical InAs Nanowires on Si | |
| Band-gap engineering of enhanced spin-orbit interactions in InAs/AlGaAs heterostructures for Datta-Das spin transistor | |
| Oxide-Induced Noise in Carbon Nanotube Devices | |
| In-Situ Inelastic Electron Tunneling Spectroscopy of Bistable Molecular Junction Devices | |
| Electric-Field Dependence of Junction Temperature in GaN HEMTs | |
| High Speed and Terahertz Devices | |
| Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products | |
| Ultra-low Resistance Ohmic Contacts to InGaAs/inP | |
| Sb-heterostructure Millimeter-Wave Detectors with Improved Noise Performance | |
| Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection | |
| Room-Temperature Terahertz Oscillators Using Resonant Tunneling Diodes | |
| Novel Plasmon-Resonant Terahertz-Wave Emitter Using a Double-Decked HEMT Structure | |
| THz front-side illuminated quantum well photodetector | |
| Semiconducting Nanowire Devices | |
| Towards vertical III-V nanowire devices on silicon | |
| Control of Threshold Voltage in 80 nm Gate Length InAs Vertical Nanowire WIGFETs | |
| Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation | |
| High performance In203 nanowire transistors using organic gate nanodielectrics | |
| Impact ionization FETs based on silicon nanowires | |
| A Low Power, Highly Scalable, Vertical Double Gate MOSFET Using Novel Processes | |
| An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions | |
| Reduction of Acoustic Phonon Limited Electron Mobility due to Phonon Confinement in Silicon Nanowire MOSFETs | |
| THz probe for nanowire FETs: simulation of few-electron fingerprints | |
| Photonic Devices | |
| The first commercial large-scale InP photonic integrated circuits: current status and performance | |
| A hybrid silicon evanescent photodetector | |
| High-Frequency Performance of a High-Power Traveling Wave Photodetector with Parallel Optical Feed | |
| Single Ultra Violet Photon Detection with 4H-SiC Avalanche Photodiodes | |
| The challenges and opportunities for dilute nitride antimonides in photonic devices | |
| 1.65 [mu]m buffer-free GaSb/AlGaSb quantum-well diode lasers grown on a GaAs substrate operating at room temperature | |
| High Temperature CW Operation of Interband Cascade Lasers at? ä 4.0 [mu]m | |
| Strain-Compensated AlAs-InGaAs Quantum-Cascade Lasers with Emission Wavelength 3-5 [mu]m | |
| Iii-V Cmos | |
| InGaAs CMOS: a "Beyond-the-Roadmap" Logic Technology? | |
| InGaAs and GaAs/InGaAs Channel Enhancement Mode n-MOSFETs With HfO2 Gate Oxide and a-SI Interface Passivation Layer | |
| Enhancement Mode n-MOSFET with High-? Dielectric On GaAs Substrate | |
| High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm | |
| Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al203 | |
| Performance of Sub-micron Gate Length InAIP Native Oxide GaAs-channel MOSFETs | |
| Memory Devices | |
| Hybrid ALD-SiN/Si-nanocrystals/ALD-SiN FinFET device with large P/E window for MLC NAND Flash memory application | |
| Ge/Si hetero-nanocrystalnonvolatile floating gate memory | |
| Memory Effects in Metal-Oxide-Semiconductor Capacitors Incorporating Dispensed Highly Mono-disperse One-Nanometer Silicon Nanoparticles | |
| Modeling of Multi-layer Nanocrystal Memory | |
| Phase-change Memory | |
| Novel Cross Point Switch based on Zn1-xCdxS memory devices for FPGA | |
| Rump Sessions | |
| The Future of Nanowire Devices: Top-down or bottom-up? | |
| Why do we need nano for biosensors? | |
| The THz Bridge | |
| Joint DRC/EMC Plenary Session | |
| Low Cost "Plastic" Solar Cells: A Dream or Reality??? | |
| Nanobiotechnolgy | |
| The brain and the computer | |
| Joining Microelectronics and Microionics: Nerve Cells and Brain Tissue on Semiconductor Chips | |
| Biolithography: DNA-assisted Manufacturing of Nanodevices for Optical and Electronic Biosensing | |
| Magnetoelectronics Devices & Optical Resonators | |
| Recent Advances in MRAM Technology | |
| Magnetic Sensitivity in Mesoscopic EMR Devices In I-V-I-V Configuration | |
| Simulation of Spin Torque Devices with Inelastic Spin flip Scattering | |
| Characterization and Application of Large Magnetoresistance in Organic Semiconductors | |
| Metamaterials - Negative Indices with Positive Benefits? | |
| High Performance Polycrystalllne Diamond Micro Resonators | |
| Carbon Nanotube & Graphene Devices | |
| Aligned Arrays Single Walled Carbon Nanotubes for Thin Film Electronics | |
| Quantum Capacitance Measurement for SWNT FET with Thin ALD High-k Dielectric | |
| The study of low frequency noise of single-walled carbon nanotube transistors | |
| Semiconducting Graphene Ribbon Transistor | |
| Performance Limits of Nanocomposite Transistors & Nanobio Sensors: A Bottom-up Perspective | |
| Impact of Process Variation on Nanowire and Nanotube Device Performance | |
| Scaling Behaviors of Graphene Nanoribbon FETs | |
| Role of Electrical and Thermal Contact Resistance in the High-Bias Joule Breakdown of Single-Wall Carbon Nanotube Devices | |
| Table of Contents provided by Blackwell. All Rights Reserved. |
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