Advanced Metallization Conference 2002 (Amc 2002)

, by Melnick; Cale; Zaima, Shigeaki; Ohta

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ISBN: 9781558997196 | 1558997199
Cover: Hardcover
Copyright: 12/1/2002

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Leading-edge metallization schemes inherently involve the introduction of novel metal systems and novel dielectric materials. Technological advances highlighted during AMC 2002 include the latest developments in integrating copper-based metallization with low-dielectric constant materials and in evaluating the reliability of such interconnects. For the second consecutive year, the volume takes a special look at the status of vertical integration, or 3D chips, and the promise it holds for high-density functional integration and heterogeneous integration. Technical leaders from around the world come together in this volume, the 18th in a popular series from the Materials Research Society, to offers a comprehensive overview of the current state of advanced metallization science and technologies. Topics include: advanced interconnects, 3D integration and packaging; CMP; reliability, test and characterization; metallization; integration; low-k/dielectric materials and characterization; atomic layer deposition (ALD) and barriers.

3D-integration : trends and opportunities - an overview	p. 3
Recent advances for nano interconnects : conductor reliability and resistivity	p. 13
Interconnect issues for integrated MEMS technology	p. 21
3D wafer stacking technology	p. 29
3D interconnects using a Cu wafer bonding : technology and applications	p. 37
Processing of inter-wafer vertical interconnects in 3D ICs	p. 45
Face-to-face chip integration with full metal interface	p. 53
Application of a global-local random-walk algorithm for thermal analysis of 3D integrated circuits	p. 59
Wire bonding failure mechanisms and simulations of Cu low-k IMD chip packaging	p. 67
Time-modulated Cu-plating technique for fabricating high-aspect-ratio vias for three-dimensional stacked LSI system	p. 75
Cu CMP using fixed abrasive (FX-CMP) for damascene interconnection	p. 83
A robust CMP process for sub-0.13 [mu]m copper/low-k interconnects	p. 89
Galvanic corrosion testing of WC[subscript x]N[subscript y] barrier metal in H[subscript 2]O[subscript 2] based slurries	p. 95
Investigation of oxidizer in liner slurry on copper chemical-mechanical polishing for advanced BEOL interconnections	p. 103
An integrated multiscale mechanical model for chemical mechanical planarization	p. 109
Fundamental study of low friction Cu abrasive-free polishing	p. 115
Cu-CMP corrosion control technique using gas dissolved water	p. 121
Interface reliability of high performance interconnects	p. 127
Scaling rule for electromigration in Cu dual-damascene interconnects on W	p. 139
Fundamentals and improvements of line-to-line breakdown reliability in copper damascene process	p. 147
Voiding in Cu dual damascene metallization due to Cu densification during thermal stress	p. 155
Geometrical aspects of stress-induced voiding in copper interconnects	p. 161
The effect of line length on the electromigration reliability of Cu interconnects	p. 169
Evaluation of interface adhesion of thin film layers by four-point bending test	p. 177
Yield study of Cu/black diamond dual damascene interconnects using burn-in	p. 185
Resistance degradation profile in electromigration of dual-damascene Cu interconnects	p. 191
The numerical analysis of copper transport in SiO[subscript 2] during bias temperature stress test	p. 197
Comparison of copper interconnect electromigration behaviors in various low-k materials for 0.13 [mu]m technology	p. 203
Adhesion evaluation by nanoscratch method in stacked thin film structures	p. 209
3D coupled simulation of electromigration in copper-low-k multilevel interconnect	p. 215
Thermal induced failure of organic low-k/Cu multilevel interconnect	p. 221
A study of via bottom profile on via failure in multi-level Cu interconnection	p. 227
Electromigration reliability study of self-ionized plasma barriers for dual damascene Cu metallization	p. 233
A comparison of CVD TiN(Si) and PVD Ta metal barriers using a novel metal barrier reliability test structure	p. 239
Influence of sample preparation on interfacial adhesion energy using the four-point bend technique	p. 243
Electromigration characteristics and characterization of multilevel Cu interconnects	p. 249
Time-dependent dielectric-constant increase - novel criteria for low-k materials reliability	p. 259
Influence of metal electrodes on leakage current in MSQ films with or without pores	p. 265
Characterization of porous low-k dielectrics by gas adsorption techniques	p. 273
Off- and on-time dependences of electromigration MTF in pulsed DC stressing tests	p. 279
Extraction of interconnect-length-distribution parameters from CAD data	p. 285
Derivation of film characteristics and prediction of electromigration failure in passivated polycrystalline line	p. 291
Transmission line interconnect structure in Si ULSI	p. 297
Reliability of copper inlaid structures - geometry and microstructure effects	p. 305
Impact of post ECD anneal on copper layer properties	p. 313
Grain formation during polycrystalline thin film growth	p. 321
Cobalt alloy thin films for encapsulation of copper	p. 329
Electrodeposition of copper-tin alloy films for enhancement of electromigration and stress migration resistance in ULSI era	p. 337
Resistivity of ultra-narrow Cu interconnects fabricated with electron beam lithography	p. 345
Advanced electroless Ag-W thin films for ULSI metallization	p. 349
Deposition of platinum thin films by MOCVD using a direct liquid injection system	p. 355
Effects of the leveler component on gap filling profiles for the copper damascene electroplating process	p. 361
Pattern density effects on film profile evolution during ECD	p. 367
Overcoming terminal effects during electrochemical deposition of copper films for 300 mm damascene interconnect applications	p. 373
Electrochemical deposition and characterization of high performance CuAg-thin film metallizations for interconnects and SAW-electrodes	p. 379
Enhancement of contact filling characteristics in CVD-Al metallization with plasma-treated MOCVD-TiN wetting layer	p. 385
Surface and grain boundary scattering : a modeling study of the electrical resistivity in sub-50 nm copper lines	p. 391
Microstructure of Cu damascene nano-interconnects	p. 397
Copper seed layer sealing for advanced interconnects : extendibility of I-PVD	p. 403
Chemical fluid deposition of copper films	p. 409
Effects of underlying dielectrics on properties and reliability of Cu-based metallization system	p. 415
Bulk CVD tungsten and pulsed nucleation layer tungsten deposition methods and the impact on film conformality, crystallography, microstructure and chemical mechanical planarization removal rate of tungsten	p. 421
Selective silicidation of cobalt using SiH[subscript 4], and Si[subscript 2]H[subscript 6] for Cu metallization	p. 427
Integration of CVD Cu seed with CVD Cu barrier for dual damascene Cu metallization	p. 433
The effects of chlorine in contact resistance of TiSi[subscript 2] films deposited by PECYD-Ti in tungsten bit-line stud process	p. 439
Al-CVD technology using MPA [methylpyrrolidine alane]	p. 445
Sequential flow deposition (SFD) of W nucleation layer using Si[subscript 2]H[subscript 6], B[subscript 2]H[subscript 6] and SiH[subscript 4] reduction gases for W plug	p. 451
In situ cleaning solution to high via resistance issue on floating metal pattern	p. 457
Copper deposition characteristics from a supercritical CO[subscript 2] fluid	p. 463
Productization of Cu/low-k at the 130 and 90 nm technology nodes	p. 471
0.13 [mu]m generation integration and manufacturing of dual damascene copper in FSG	p. 485
Robust low-k SiOC integration in Cu dual damascene interconnect for 90 nm node SoC technology	p. 493
A study on the integration of organosilicate glasses for advanced copper/low-k interconnections	p. 501
Modified silica xerogel as a low-k dielectric with improved mechanical properties	p. 507
Demonstration of dual damascene 0.18 [mu]m Cu/black diamond integration	p. 513
Dielectric bottom anti-reflective coatings for the patterning of organosilicate dual damascene structures	p. 519
Process challenges for integrating copper with SiLK dielectric	p. 525
A sacrificial Al-seed Cu-plating technology for Cu line-pillar/STP scheme	p. 531
An imprint-damascene process for Cu/low-k interconnects	p. 537
Influence of Si substrate ground on antenna transmission gain for on-chip wireless interconnects	p. 543
Fluorocarbon etching of porous silicon dioxide : plasma chemistry and surface kinetics	p. 551
A new method of cleaning Cu/organic low-k interconnect	p. 557
A novel ultra tough organic low-k film with a highly cross-linked low density structure	p. 563
Determining dielectric constant variation of SiOC low-k film using density measurement	p. 569
Preparation of damascene trench sidewalls in CVD nano-porous ultra low-k (k = 2.2) films for compatibility with MOCVD diffusion barriers	p. 575
High-k MIM capacitor using ZrO[subscript 2] for RF application	p. 583
Improvement of film properties by plasma modification of a porous low-k organosilicate glass material	p. 589
A new method for in-line measurement of the dielectric constant of low-k films	p. 595
Effects of supercritical processing on ultra low-k films	p. 601
Processing of ultra-low-k xerogel composite films	p. 607
Experimental determination of the effective relative permittivity of copper/low-e[subscript r] dual damascene integrated structures	p. 613
Study of process impact on low-k dielectric in copper dual damascene interconnect process	p. 619
Integratibility evaluation of ultra-low-k dielectric material for 65 nm technology	p. 625
Integration of plasma deposited CF polymer in a copper/low-k damascene architecture	p. 629
How to eliminate voiding in porous low-k dielectrics and the mechanism of void formation	p. 637
Dielectric constant and Young's modulus of organic low-k materials calculated by molecular orbital method	p. 643
A novel porous silica film for Cu/low-k multilevel interconnects	p. 649
Effects of stress controlled by SiF[subscript 4] flow rate and temperature on HDP-FSG/PE-SiN interface delamination in 64-bit RISC microprocessor	p. 655
STP with low-k polymer SiLK resin	p. 661
Organometallic Hf and Si precursors for Hf[subscript 1-x]Si[subscript x]O[subscript 2] thin film formation	p. 665
Curing process window for MSQ based low-k dielectrics	p. 671
Quantum chemical study on dielectric constants of siloxane and its derivatives	p. 677
Atomic-layer deposition processes for nanoscale copper metallization	p. 685
Atomic layer deposited aluminum oxide (Al[subscript 2]O[subscript 3]) : a promising dielectric for metal insulator metal capacitors (MIMCAPS)	p. 693
Electrical and physical characterization of atomic layer deposited thin films for copper barrier applications	p. 701
Improving pulse protocols in atomic layer deposition	p. 709
Table of Contents provided by Blackwell. All Rights Reserved.

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