Advanced Metallization and Interconnect Systems for Ulsi Applications in 1995

Note: Supplemental materials are not guaranteed with Rental or Used book purchases.

ISBN: 9781558993419 | 155899341X
Cover: Hardcover
Copyright: 3/1/1999

Rent

(Recommended)

$29.34

Term

Due

Price

Semester

Jul 31

$30.89

Quarter

Jun 26

$29.34

Short Term

Jun 2

$27.80

*This item is part of an exclusive publisher rental program and requires an additional convenience fee. This fee will be reflected in the shopping bag.
Buy New

Special Order: 1-2 Weeks

$39.55

Summary

Supplemental Materials

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Preface
Acknowledgments
Dedication
Materials Research Society Conference Proceedings
Keynote Presentations: Process Technologies for High Performance Multilevel Metallization Systems	p. 3
Implementation of Low-k Dielectrics for Interconnect Capacitance Reduction	p. 15
Benzocyclobutene (DVS-BCB) Polymer as an Interlayer Dielectric Material	p. 23
Low Density Silica Xerogels for Low [kappa] Dielectrics	p. 29
Structure-Property Relationships of Thin Films of Fluorinated Polyimide Copolymers for Interlayer Dielectric Applications	p. 37
Low Dielectric Constant Fluorine-Doped TEOS-Based Oxide Films	p. 45
Performance and Scaling Issues for Sub-Half Micron ULSI Interconnections	p. 53
Integration of Low Dielectric Constant Materials with 0.25-[mu]m Aluminum Interconnects	p. 59
Process Integration Considerations for a Material with Low Dielectric Constant - Hydrogen Silsesquioxane Based Flowable Oxide	p. 67
The Integration of a Low-k Material with High Organic Content in a Non-Etchback Process	p. 75
F-Doped SiO[subscript 2] for Low Dielectric Constant Films in Sub-Half Micron ULSI Multilevel Interconnection	p. 81
Siloxane Spin-On Glass with a Low Dielectric Constant by E-Beam Treatment	p. 89
An Evaluation of Fluorine Doped PETEOS on Gap Fill Ability and Film Characterization	p. 95
Improvement of the Dielectric Properties of Silsesquioxane Based Spin-On-Polymer by Plasma Curing and Other Novel Techniques	p. 101
FLARE, A Low Dielectric Constant Organic Polymer Intermetal Dielectric: Chemistry and Relevant Thermomechanical Properties	p. 107
Low Dielectric SiOF Films Using Novel CVD Precursors	p. 115
Planarization Performance of Flowable Oxide in the Sub-0.5 [mu]m Regime	p. 121
Impact of Low-k ILD and Cu on Circuit Performance	p. 129
Sub-Micron Gap Fill and In-Situ Planarisation Using Flowfill Technology	p. 137
Cluster Integration of TIN MOCVD Barrier and Copper Deposition for 0,25 [mu]m via Filling Application	p. 145
Characterization of Metal Line Resistance Change During Electromigration Test in Al/TiN Layered Interconnects	p. 153
The Impact of Negative Overlap between Metal- and Via-Levels on Via Performance: Via Resistance, Via String Yield and Electromigration Resistance	p. 159
Comparison of Electromigration Characteristics of Pure Copper and Aluminum Alloy Metallizations	p. 165
An Effective Residual Photoresist Strip in a Reducing Ambient - Application to CVD W with a Non-Etchback Siloxane SOG	p. 169
Process Integration of a High Density Plasma Film with a Sacrificial Etchback Process for Sub-0.5 [mu]m Multilayer Metal Structures	p. 175
Cluster Synthesis and Trench Filling Using Inert Gas Condensation and Ballistic Deposition	p. 181
Low-Pressure Chemical Vapor Deposition of Cu-Pd Alloys for Metallization Applications	p. 187
Kinetics and Mechanism of Copper CVD Using Cu(HFAC)[subscript 2] and Related Adducts	p. 195
High-Speed Chemical Vapor Deposition of Aluminum Using Liquid Delivery System	p. 201
Triakylamine Adducts of Dimethylaluminum Hydride as Precursors for CVD Aluminum	p. 207
Nucleation Behaviour in Copper CVD from Cu(hfac) TMVS on Different Substrate Materials	p. 213
Molecular Dynamics Simulation of Surface Melting for Al Reflow	p. 219
Magnetron Sputter Deposition for Interconnect Applications	p. 227
Integrated PECVD-Ti/TiN Thin Films for Via Level Applications	p. 233
The Improvement of Electrical Properties of TiN Film Deposited by MOCVD Using TDMAT	p. 241
Chemical Vapor Deposition of Ti-Si-N Films for Diffusion Barrier Applications	p. 249
Characteristics of PECVD Grown W-Nitride Films as Diffusion Barrier Layers for ULSI DRAM Applications	p. 257
A Barrier Structure for Contacts Filled with High Pressure Aluminum	p. 265
CVD Ti/TiN and High Temperature Al-Plug Process for 0.5 [mu]m Contact	p. 273
The Diffusion Barrier Property of TiN and TaN for Cu Metallization	p. 281
Ta and Ta(N): A High Reliable Diffusion Barrier and Protection Layer for Copper Metallized Integrated Circuits	p. 291
The Effect of Temperature on Non-Collimated and Collimated Ti and TiN Films	p. 299
Compositional Variation of Sputtered TiW Thin Films on Topography: TEM/EDX Measurements and SIMBAD Simulations	p. 311
Poly-Metal Gate Process - Ultrathin WSiN Barrier Layer Impermeable to Oxidant in-Diffusion During Si Selective Oxidation	p. 317
Characterization of Ti-Si-N and W-Si-N Barrier Metals for Cu Interconnects	p. 325
Evolution of Microstructure and Texture in Sputter-Deposited TiN Films for Interconnect Applications	p. 333
TiN/Ti Barrier Metals for High Pressure Al Plugs	p. 341
TiN Films Deposition on the Large Diameter Wafers by ECR Plasma CVD Method	p. 347
Low Temperature and Low Pressure Process Metalorganic Chemical Vapor Deposition (MOCVD) of Superior Barrier Layers in Advanced ULSi Devices	p. 355
Reliability and Electrical Properties of Poly-Si/TiSix Gate Structures with TiN Barrier Layers	p. 363
Growth and Properties of W-B-N Diffusion Barriers Deposited by Chemical Vapor Deposition	p. 369
Resistivity Enhancement of CVD TiN with In-Situ Nitrogen Plasma and its Application in Low Resistance Multilevel Interconnects	p. 375
Low Pressure Chemical Vapor Deposition of TiN from a New Metalorganic Precursor	p. 381
Barrier/Cu Contact Resistivity	p. 387
Collimated Ti/TiN Film Deposited in Single Sputtering Chamber	p. 395
Reactivity Sputtered Ti-Si-N Diffusion Barriers	p. 401
Model Development for the CVD of TiN from Ti(NR[subscript 2])[subscript 4] and NH[subscript 3]	p. 409
Electrical Characterization of MOCVD TiN for ULSI Metallization	p. 417
Modeling of Intrinsic Stresses of Titanium Thin Films Deposited by Collimated Sputtering	p. 423
Materials and Processing Issues in Co and Ti Silicidation for 0.25 [mu]m CMOS Applications and Beyond	p. 431
In-Situ X-ray Diffraction Analysis of CoSi[subscript 2] Phase Formation on Single and Polycrystalline Silicon as a Function of Linewidth and Dopant at Rapid Thermal Annealing Rates	p. 439
Thermally Stable Ultrathin Cobalt Silicide Film Formation for Deep Submicron Devices	p. 447
Mechanism Causing P+/n+ Growth Differences and Encroachment in Selective W-Stacked CMOS Applications	p. 455
Metal Dummy Planarization Process and Thin Tungsten Wiring: Application to 0.35 [mu]m CMOS LSI's	p. 461
Production-Level Planarized Metallization for Lower Half-Micron Devices Using Tungsten Selective CVD	p. 467
A Novel Surface Cleaning Using Chlorinetrifluoride for Selective W-CVD	p. 475
Monolayer Nitridation of Silicon Surfaces and its Effects on Tungsten Chemical Vapor Deposition	p. 483
A Study of WF[subscript 6] Diffusion and Reaction Kinetics for TiN in W-CVD	p. 491
A Model with Surface Reaction and Gas Transport for Tungsten CVD	p. 497
Computational Study on Atomistic Dynamics in Selective W-CVD Using SiH[subscript 4] and WF[subscript 6]	p. 505
Study on CoSi[subscript 2] Formation on Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy and Scanning Tunneling Spectroscopy	p. 511
Formation of Defects by Silicidation Reactions at Ti/Si Interfaces	p. 517
A Methodology for Rapidly Optimizing Step Coverage for LPCVD of Tungsten	p. 523
Parametric Study of H[subscript 2] Doped SiH[subscript 4]/WF[subscript 6] Nucleation on Ti/TiN by Tungsten CVD Process	p. 529
Modeling of Blanket and Selective Tungsten LPCVD	p. 535
Chemical Vapor Deposited Tungsten Interconnect Technology	p. 541
The Kinetics of Tungsten Deposition from the H[subscript 2]/WF[subscript 6]-Mixture Studied by In Situ Laser Raman Scattering	p. 549
Stress Reduction in Tungsten CVD Films by RTA Post-Treatment of Ti/TiN Bilayers in Ammonia	p. 555
Blanket Tungsten Film Deposition Using Programmed Rate CVD	p. 563
A High Deposition Rate CVD W Nucleation Process without Ti/TiN Barrier Degradation for 0.25 [mu]m Technology	p. 569
Electrical Properties of WGe[subscript x] Contacts on Ti Adhesion Layers	p. 575
The Influence of Temperature and Pressure on the Nucleation and Growth of Blanket CVD W on CVD TiN	p. 581
Tungsten Interconnections Formed by Selective Deposition of Tungsten on Polysilicon	p. 589
Electroless Cu Deposition	p. 597
Novel Copper Seeded Electroless Copper Deposition for ULSI Interconnect Technology	p. 607
Cost Issues for Back End Interconnect Systems	p. 615
Simulation of High Temperature Copper Planarization	p. 621
Temperature Dependence of Blanket Aluminum CVD on Si(100) Using TIBA and DMAH	p. 627
High Pressure Aluminium Fill	p. 635
Aluminum Based Interconnect Systems	p. 645
Low Cost High Reliable Metallization Technology Using High Pressure Low Temperature Al Plug	p. 653
Utilization of Thin Noble Metal Layers for Selective Via Plugging by Al-MOCVD	p. 661
Mirror-Like Surface Morphology of CVD-Al on TiN by CIF[subscript 3] Pretreatment	p. 667
A Study on Pyrolysis DMEAA for Selective Deposition of Aluminum	p. 675
Fill Mechanism and Film Morphology Studies During Two Step Aluminum Planarization	p. 681
Copper Reactive Ion Etching Using Infrared Light Irradiation	p. 691
Comparative Evaluation Study of CMP-Copper Interconnect Prepared by Sputter-Reflow with the One Prepared by CVD	p. 701
Self-Sputtering of Cu Film Employing Highly Ionized Cu Plasma	p. 709
Yield and Defect Characterization of Copper CMP Metallization	p. 717
Processing and Chemical-Mechanical Polishing of Dual Damascene Aluminum Interconnect Structures	p. 725
Critical Factors for Tungsten Chemical Mechanical Planarization (CMP) of Sub-Half Micron Contacts and Vias	p. 733
Comparison of CeO[subscript 2] and SiO[subscript 2] for Planarization of Interlevel Dielectric by Chemical-Mechanical Polishing	p. 741
Theoretical Approach to Understanding Copper Chemical Vapor Deposition Mechanism	p. 749
Electrical Characterization of Tungsten Vias Planarized by CMP	p. 757
Author Index	p. 763
Subject Index	p. 767
Table of Contents provided by Blackwell. All Rights Reserved.

FREE SHIPPING

Rent More, Save More! Use code: BBRENTAL

5% off 1 book, 7% off 2 books, 10% off 3+ books

Advanced Metallization and Interconnect Systems for Ulsi Applications in 1995

Summary

Table of Contents

Supplemental Materials