Advances and Challenges in Chemical Mechanical Planarization

, by Borst, C.; Economikos, L.; Philipossen, A.; Zwicker, G.

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ISBN: 9781558999510 | 1558999515
Cover: Hardcover
Copyright: 11/13/2007

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chemical mechanical planarization has been a leading-edge technology in semiconductor processing for the past 15-20 years. A successful CMP process is based in fundamental science across the disciplines of mechanical engineering, chemical engineering, colloid science, materials science and chemistry.

CMP Active Diamond Characterization and Conditioner Wear	p. 3
The Impact of Diamond Conditioning on Surface Contact in CMP Pads	p. 15
Surface Chemical Characteristics of CMP Polyurethane Pads	p. 21
Determining Pad-Wafer Contact Using Dual Emission Laser Induced Fluorescence	p. 27
Computational Solid Mechanics Modeling of Asperity Deformation and Pad-Wafer Contact in CMP	p. 39
Investigation of Diamond Grit Size and Conditioning Force Effect on CMP Pads Topography	p. 45
Fundamentals of Post-CMP Cleaning	p. 53
Spectroscopic and Topographic Investigations of Nanoparticle Abrasive Retention in Polyurethane CMP Pads for Cu CMP	p. 65
Influence of Post-CMP Cleaning on Cu Surface	p. 71
Newly Developed Abrasive-Free Copper CMP Slurry Based on Electrochemical Analysis	p. 79
AFM Investigations of Chemical-Mechanical Processes on Silicon(100) Surfaces	p. 93
Particle Metrology in CMP Slurries - Potential and Limitations of Relevant Measuring Methods	p. 107
Advances in the Characterization of Particle Size Distributions of Abrasive Particles Used in CMP	p. 119
Low Defect Ceria for ILD CMP	p. 125
Measurement of Interactions Between Abrasive Silica Particles and Copper, Titanium, Tungsten and Tantalum	p. 133
Influence of Microstructure on Aggressive Chemical Mechanical Planarization Processes for Thick Copper Films	p. 139
Particles as Transport Carriers in CMP Slurries	p. 145
Advances in Understanding and Control of CMP Performance: Contact-Hydrodynamics at Wafer, Groove, and Asperity Scale	p. 153
Experimental Investigation and Numerical Simulation of Pad Stain Formation During Copper CMP	p. 165
Micromachined Shear Stress Sensors for Characterization of Surface Forces During Chemical Mechanical Polishing	p. 171
An Approach to Modeling Particle-Based and Contact-Based Wear in CMP	p. 183
High Rate Silicon Carbide Polishing to Ultra-Smooth Surfaces	p. 207
Cu Post-CMP Displacement Cleaning: A Mechanistic Product Development Approach Based on Selected Thermodynamic and Kinetic Data	p. 215
Nano-Scale Characterization of Surface Defects on CMP-Finished Si Wafers by Scanning Probe Microscopy Combined with Laser Light Scattering	p. 227
Screening Study on Frictional Force Analysis in Relation to Silica Abrasive and Slurry Properties	p. 233
Composite Polymer Core - Ceria Shell Abrasive Particles During Silicon Oxide CMP	p. 239
New Particle Metrology for CMP Slurries	p. 249
äproved Defect Classification Techniques of a Laser ättering Detection System for Post CMP Silicon Dioxide äWafers	p. 255
äSurfactants in Controlling Removal Rates and Selectivity Barrier Slurry for Cu CMP	p. 261
Study in Selectivity Variations of WCMP Slurries Related pH, [zeta]-Potential and Dilutions with De-Ionized Water	p. 267
Effect of Wettability of Poly Silicon on CMP Behavior	p. 275
Development and Optimization of Slurry for Ru CMP	p. 283
Enabling Damascene Solutions for 45 nm Beyond	p. 291
Effects of Additives in KOH Based Electrolytes on Cu äCMP	p. 303
ECMP Enhances the Planarization Efficiency - A Phenomenon of Reverse Topography During Cu Removal	p. 309
Wafer Level Modeling of Electrochemical-Mechanical Polishing (ECMP)	p. 315
Application of Scatterometry to BEOL Measurements: Post Cu CMP Measurements	p. 323
On a Particle-Augmented Mixed Lubrication Approach to Predicting CMP	p. 333
Contact Model for a Pad Asperity and a Wafer Surface in the Presence of Abrasive Particles for Chemical Mechanical Polishing	p. 343
Single Asperity Tribochemical Wear of Silicon by Atomic Force Microscopy	p. 349
Towards a Quantitative Description of Pattern-Dependent Planarization with Ceria Slurries	p. 355
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Advances and Challenges in Chemical Mechanical Planarization

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