Compound Semiconductor Device Physics

This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding

Review of Semiconductor Physics, Properties, and Device Implications. Mathematical Treatments. Transport across Junctions. Metal-Semiconductor Field Effect Transistors. Insulator and Heterostructure Field Effect Transistors. Heterostructure Bipolar Transistors. Hot Carrier and Tunneling Structures. Scaling and Operational Limitations. Network Parameters and Relationships. Properties of Compound Semiconductors. Physical Constants, Units, and Acronyms. Glossary. Index.