Discrete and Integrated Power Semiconductor Devices Theory and Applications

, by Benda, Ví; tezslav; Grant, Duncan A.; Gowar, John

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ISBN: 9780471976448 | 047197644X
Cover: Hardcover
Copyright: 1/26/1999

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Summary

Author Biography

Supplemental Materials

This valuable reference encompassing the structure, operation and application of power semiconductor devices will benefit both practising electronics engineers and students of power electronics.

Preface

1 Properties of Semiconductors

(32)

1.1 Charge Carriers and Semiconductor Band Structure

(2)

1.2 The Concentration of Free Carriers

(6)

1.3 The Conductivity of Semiconductors

(7)

1.3.1 Factors Determining Conductivity

(2)

1.3.2 Factors Determining the Carrier Mobilities in Silicon

(5)

1.4 The Generation and Recombination of Excess Charge Carriers

(10)

1.4.1 Equilibrium and Non-Equilibrium Conditions

(2)

1.4.2 Recombination via Local Trapping Centres

(6)

1.4.3 Other Recombination Processes

(2)

1.5 Diffusion and Drift of Charge Carriers

(3)

1.6 Effects of Non-Uniform Doping

(3)

Summary

(1)

References

(1)

2 Elementary Semiconductor Structures

(36)

2.1 The p-n Junction and its Basic Properties

(24)

2.1.1 Current-Voltage Characteristics

(8)

2.1.2 Reverse Bias

(4)

2.1.3 Electrical Breakdown

(4)

2.1.4 Thermal Breakdown and Thermal Runaway

(2)

2.1.5 The Influence of Illumination on p-n Junction Characteristics

(2)

2.1.6 Transient Behaviour of the p-n Junction

(4)

2.2 n-n^(+) and p-p^(+) Junctions

(2)

2.3 Surface Effects and MOS Structures

(3)

2.4 Metal-Semiconductor Contacts

(4)

2.4.1 Rectifying (Schottky) Contacts

(3)

2.4.2 Ohmic Contacts

(1)

Summary

(1)

References

(2)

3 Devices, Fabrication and Modelling

(58)

3.1 The Range of Power Semiconductor Devices

(24)

3.1.1 Power Diodes

(3)

3.1.2 Conventional Power Bipolar Transistors

(2)

3.1.3 Thyristor Structures

(3)

3.1.4 Junction Field-Effect (Static Induction) Devices

(3)

3.1.5 Power MOS Structures 1: The Power MOSFET

(2)

3.1.6 Power MOS Structures 2: The Insulated Gate Bipolar Transistor (IGBT)

(2)

3.1.7 Power MOS Structures 3: The MOS-Controlled Thyristor (MCT)

(1)

3.1.8 A Summary of Device Characteristics

(5)

3.2 Fabrication Processes

(21)

3.2.1 The Preparation of High Purity Single-Crystal Silicon

(3)

3.2.2 Wafer Preparation

(2)

3.2.3 Epitaxial Growth

(1)

3.2.4 Thermal Oxidation

100

(1)

3.2.5 Photolithography

101

(2)

3.2.6 Etching Processes

103

(1)

3.2.7 The Introduction and Redistribution of Impurities 1: Diffusion

104

(5)

3.2.8 The Introduction and Redistribution of Impurities 2: Ion Implantation

109

(1)

3.2.9 Chemical Vapour Deposition Techniques

110

(2)

3.2.10 The Preparation of Contacts

112

(2)

3.3 The Control of Carrier Lifetime

114

(4)

3.3.1 Techniques for Obtaining Long Carrier Lifetimes

114

(1)

3.3.2 Techniques for Reducing Carrier Lifetimes

115

(3)

3.4 High Voltage Structures

118

(6)

3.5 Computer Modelling and Simulation Techniques

124

(1)

Summary

125

(1)

References

126

(1)

4 Power Semiconductor Device Applications

127

(20)

4.1 Uncontrolled Rectification

127

(2)

4.2 Controlled Rectification

129

(1)

4.3 Conversion of ac to ac

130

(2)

4.4 Inverters

132

(6)

4.5 Non-Isolated dc to dc Converters

138

(2)

4.6 Transformer-Isolated dc to dc Converters

140

(2)

4.7 Power Factor Correction

142

(1)

4.8 Resonant Circuits

143

(2)

Summary

145

(1)

References

145

(2)

5 Power Diodes

147

(30)

5.1 The Forward-Biased Diode

147

(10)

5.2 Reverse Characteristics of Power Diodes

157

(3)

5.3 Transient Processes in Power Diodes

160

(11)

5.3.1 The Transition from Reverse Bias to Forward Bias

160

(2)

5.3.2 The Transition from Forward Bias to Reverse Bias

162

(9)

5.4 Power Schottky Diodes

171

(3)

5.5 Silicon Power Diode Applications

174

(1)

5.5.1 Power Frequency Applications

174

(1)

5.5.2 Fast-Switching Applications

175

(1)

Summary

175

(1)

References

176

(1)

6 Bipolar Junction Power Transistors

177

(32)

6.1 Basic Characteristics of the Bipolar Junction Transistor Structure

177

(6)

6.2 Basic Characteristics of Power Transistors

183

(12)

6.2.1 High Voltage Considerations

183

(2)

6.2.2 Transistor Operating Regions

185

(1)

6.2.3 High Current Considerations: Collector Conductivity Modulation and Base Widening Effects

186

(6)

6.2.4 Other High Current Density and Temperature Effects

192

(3)

6.3 The Dynamic Behaviour of Power Transistors

195

(7)

6.3.1 Turn-On

195

(3)

6.3.2 Turn-Off

198

(4)

6.4 Safe Operating Area

202

(3)

6.5 The Power Darlington Configuration

205

(2)

6.6 Power Transistor Applications

207

(1)

Summary

208

(1)

References

208

(1)

7 Thyristors: Basic Operating Principles

209

(38)

7.1 Steady-State Operation

209

(7)

7.1.1 The Reverse Blocking State

209

(2)

7.1.2 The Forward Blocking State

211

(1)

7.1.3 Surface Profiles for High Breakdown Voltages

212

(2)

7.1.4 The Forward Conducting State

214

(2)

7.2 The Two-Transistor Model for Thyristor Switching

216

(4)

7.3 Transient Processes during Turn-On

220

(12)

7.3.1 Gate Turn-On

222

(4)

7.3.2 Critical di/dt

226

(4)

7.3.3 Critical dV/dt

230

(2)

7.4 Transient Processes during Turn-Off

232

(12)

7.4.1 Turn-Off using Circuit Commutation

233

(2)

7.4.2 Turn-Off by a Decrease of Forward Current

235

(1)

7.4.3 Gate Turn-Off

236

(8)

Summary

244

(1)

References

245

(2)

8 Thyristor Types and Applications

247

(26)

8.1 Phase-Control Thyristors

247

(2)

8.2 Thyristors for High Speed Applications

249

(8)

8.2.1 The Asymmetric Thyristor (ASCR)

250

(3)

8.2.2 The Reverse Conducting Thyristor (RCT)

253

(1)

8.2.3 The Gate-Assisted Turn-Off Thyristor (GATT)

254

(3)

8.3 The Gate Turn-Off Thyristor (GTO)

257

(7)

8.4 The Triac

264

(2)

8.5 Light-Triggered Thyristors (LTTs)

266

(3)

8.6 Breakover Diodes (BODs)

269

(2)

Summary

271

(1)

References

271

(2)

9 Static Induction Power Devices

273

(14)

9.1 The Static Induction Transistor

273

(7)

9.2 The Field-Controlled Diode or Static Induction Thyristor

280

(4)

9.2.1 Gated Turn-Off

282

(1)

9.2.2 The dV/dt Capability

283

(1)

9.2.3 The Turn-On Process

284

(1)

Summary

284

(1)

References

285

(2)

10 Power Metal-Oxide-Semiconductor Field-Effect Transistors

287

(30)

10.1 Principles of MOS Transistor Operation

287

(6)

10.1.1 The On-State

288

(5)

10.1.2 The Saturation Condition

293

(1)

10.2 Vertical Power MOSFET Designs

293

(12)

10.2.1 Static Characteristics

294

(9)

10.2.2 The Frequency Dependence of Parameters

303

(2)

10.3 The Switching of Power MOSFETs

305

(7)

10.3.1 The Turn-On Process

306

(3)

10.3.2 The Turn-Off Process

309

(2)

10.3.3 The Frequency Dependence of the Switching Parameters

311

(1)

10.4 Safe Operating Area (SOA)

312

(3)

Summary

315

(1)

References

315

(2)

11 Power Bipolar-MOS Devices

317

(26)

11.1 The Insulated Gate Bipolar Transistor (IGBT)

318

(15)

11.1.1 Static Parameters

319

(4)

11.1.2 Switching Characteristics

323

(6)

11.1.3 The Frequency Dependence of Parameters and the SOA

329

(2)

11.1.4 Punch-Through (PT) and Non-Punch-Through (NPT) IGBTs

331

(2)

11.1.5 IGBT Developments

333

(1)

11.2 The MOS-Controlled Thyristor (MCT)

333

(4)

11.3 Other Bipolar-MOS Structures

337

(3)

11.3.1 The Lateral IGBT

337

(1)

11.3.2 The IBT

338

(1)

11.3.3 Monolithic Integration of Parallel-Connected Devices

338

(2)

Summary

340

(1)

References

341

(2)

12 Power Modules and Integrated Structures

343

(16)

12.1 Power Modules

344

(5)

12.2 Power Integrated Circuits

349

(4)

12.3 Smart Power: Intelligent Power Devices and Integrated Circuits

353

(3)

Summary

356

(1)

References

357

(2)

13 Conditions for Reliable Operation

359

(38)

13.1 The Cooling of Power Semiconductor Devices

359

(20)

13.1.1 Thermal Resistance and Transient Thermal Impedance

360

(4)

13.1.2 The Encapsulation of Power Semiconductor Devices

364

(7)

13.1.3 Heat Sinks

371

(7)

13.1.4 The Thermal Resistance of the Device-Heat Sink Interface

378

(1)

13.2 The Parallel and Series Connection of Power Semiconductor Devices

379

(6)

13.2.1 Devices in Parallel

379

(3)

13.2.2 Devices in Series

382

(3)

13.3 Overcurrent and Overvoltage Protection of Power Semiconductor Devices

385

(6)

13.3.1 Overvoltage Protection

385

(5)

13.3.2 Overcurrent Protection

390

(1)

13.4 The Operating Reliability of Power Semiconductor Devices

391

(3)

Summary

394

(1)

References

395

(2)

14 Future Materials and Devices

397

(8)

14.1 Materials other than Silicon

397

(3)

14.2 Gallium Arsenide Devices

400

(1)

14.3 Silicon Carbide Devices

401

(1)

14.4 Diamond Devices

401

(1)

References

402

(3)

Appendix The Diffusion Equation

405

(6)

A.1 Basic Concepts

405

(1)

A.2 The Effect of Recombination

406

(1)

A.3 Methods of Solution

406

(1)

A.3.1 The Laplace Transform

406

(2)

A.3.2 Separation of the Variables

408

(1)

A.4 The Constant Current Condition

408

(1)

References

409

(2)

Index

411

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Discrete and Integrated Power Semiconductor Devices Theory and Applications

Summary

Author Biography

Table of Contents

Supplemental Materials

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Rent More, Save More! Use code: BBRENTAL

5% off 1 book, 7% off 2 books, 10% off 3+ books

Discrete and Integrated Power Semiconductor Devices Theory and Applications

Summary

Author Biography

Table of Contents

Supplemental Materials

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