Frontiers Of Characterization And Metrology For Nanoelectronics: 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, Maryland 27-29 March 2007
, by Seiler, David G.; Diebold, Alain C.; McDonald, Robert; Garner, C. Michael; Herr, Dan
- ISBN: 9780735404410 | 0735404410
- Cover: Hardcover
- Copyright: 9/26/2007
This book contains peer-reviewed papers presented at the 2007 International Conference on Frontiers of Characterization and Metrology. It emphasizes the frontiers of innovation in the characterization and metrology needed to advance nanoelectronics. It provides an effective portrayal of the industry's characterization and metrology needs and how they are being addressed. It also offers a foundation for further advances in metrology and new ideas for research and development.
| There's Plenty of Difficulty near the Bottom | p. 3 |
| CEA-LETI as a European Model of Cooperation in Nanoelectronics | p. 12 |
| Characterization and Metrology for Nanoelectronics | p. 20 |
| Metrology for Emerging Research Materials and Devices | p. 34 |
| Review of NSOM Microscopy for Materials | p. 43 |
| Optical Characterization Methods for Identifying Charge Trapping States in Thin Dielectric Films | p. 53 |
| Photo-Reflectance Characterization of Nanometer Scale Active Layers in Si | p. 64 |
| Development of a Focused-Beam Ellipsometer Based on a New Principle | p. 69 |
| Measuring Trench Structures for Microelectronics with Model-Based Infrared Reflectometry | p. 74 |
| Enhancement of Infrared Spectroscopy Capabilities for Nanoelectronic and Nanotechnology Applications | p. 79 |
| Nano-Raman: Monitoring Nanoscale Stress | p. 84 |
| Extending Conventional Scatterometry Using Generalized Ellipsometry | p. 89 |
| Investigation of Apertureless NSOM for Measurement of Stress in Strained Silicon-on-Insulator Test Structures | p. 94 |
| Metrology and Optical Characterization of Plasma Enhanced Chemical Vapor Deposition, (PECVD), Low Temperature Deposited Amorphous Carbon Films | p. 99 |
| Manufacture and Metrology of 300 mm Silicon Wafers with Ultra-Low Thickness Variation | p. 105 |
| Real-Time, High Resolution, Dynamic Surface Charge Wafer Mapping for Advanced Ion Implant Process Control | p. 111 |
| Laser Scattering: A Fast, Sensitive, In-Line Technique for Advanced Process Development and Monitoring | p. 116 |
| In Situ Monitoring of Hafnium Oxide Atomic Layer Deposition | p. 121 |
| Analysis of Nickel Silicides by SIMS and LEAP | p. 129 |
| Ion Profiling of Implanted Dopants in Si (001) with Excess Vacancy Concentration | p. 137 |
| SMS Analyses of Ultra-Low Energy B Ion Implants in Si: Evaluation of Profile Shape and Dose Accuracy | p. 142 |
| Use of Drop-on-Demand Inkjet Printing Technology to Produce Trace Metal Contamination Standards for the Semiconductor Industry | p. 146 |
| Thin-Film Nanocalorimetry: A New Approach to the Evaluation of Interfacial Stability for Nanoelectronic Applications | p. 151 |
| Strength and Fracture Measurements at the Nano Scale | p. 156 |
| Helium Ion Microscopy: A New Technique for Semiconductor Metrology and Nanotechnology | p. 161 |
| Need for Standardization of EBSD Measurements for Microstructural Characterization of Thin Film Structures | p. 168 |
| Chemical Mechanical Planarization (CMP) Metrology for 45/32 nm Technology Generations | p. 173 |
| Thin Films Characterization by Ultra Trace Metrology | p. 178 |
| Off-Specular X-Ray and Neutron Reflectometry for the Structural Characterization of Buried Interfaces | p. 185 |
| Process Monitoring and Surface Characterization by XPS in a Semiconductor Fabrication Line | p. 191 |
| Silicon Loss Metrology Using Synchrotron X-Ray Reflectance and Bragg Diffraction | p. 196 |
| Distribution Correction for Rapid, High Precision XPS Measurements of Thickness and Dose | p. 201 |
| X-Ray Reflectivity Measurements of Nanoscale Structures: Limits of the Effective Medium Approximation | p. 209 |
| CMP Control of Multi-Layer Inter-Layer Dielectrics (ILD) Using X-Ray Reflectivity | p. 216 |
| Asymmetric Relaxation of SiGe in Patterned Si Line Structures | p. 220 |
| Applications of X-Ray Reflectometry to Develop and Monitor FEOL Processes for sub-45nm Technology Nodes | p. 226 |
| USJ Metrology: From 0D to 3D Analysis | p. 233 |
| Leakage Current and Dopant Activation Characterization of SDE/Halo CMOS Junctions with Non-Contact Junction Photo-Voltage Metrology | p. 246 |
| NIST Traceable Small Signal Surface Photo Voltage Reference Wafer | p. 251 |
| Micro-Probe CV and IV Characterization of Thin Dielectric Films on Product-Wafer Scribe-Line Structures | p. 255 |
| Dopant Activation and Profile Determination with an Elastic Material Probe (EM-Probe) | p. 261 |
| Direct Monitoring of EOT-J[subscript LEAK] Characteristics for SiON and High-[kappa] Gate Dielectrics | p. 265 |
| Application of Non-Contact Corona-Kelvin Metrology for Characterization of Plasma Nitrided SiO[subscript 2] | p. 270 |
| The Continuous Anodic Oxidation Technique | p. 275 |
| Electrical Properties of Hybrid-Orientation Silicon Bonded Interfaces | p. 279 |
| NIST Method for Determining Model-Independent Structural Information by X-Ray Reflectometry | p. 287 |
| Coupling of Advanced Optical and Chemical Characterization Techniques for Optimization of High-[kappa] Dielectrics with Nanometer Range Thickness | p. 292 |
| Combinatorial Methodologies Applied to the Advanced CMOS Gate Stack | p. 297 |
| Distinguishability of N Composition Profiles in SiON Films on Si by Angle-Resolved X-Ray Photoelectron Spectroscopy | p. 303 |
| Internal Photoemission Spectroscopy of Metal Gate/High-[kappa]/Semiconductor Interfaces | p. 308 |
| Spectroscopic Studies of Band Edge Electronic States in Elemental High-[kappa] Oxide Dielectrics on Si and Ge Substrates | p. 315 |
| VUV Reflectometry for Thin Film Thickness and Composition Metrology and Process Development and Control | p. 320 |
| Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si | p. 324 |
| Hard X-Ray Photoemission Experiments on Novel Ge-Based Metal Gate/High-[kappa] Stacks | p. 329 |
| Metrology of Silicide Contacts for Future CMOS | p. 337 |
| Ultra Low-[kappa] Metrology Using X-Ray Reflectivity and Small-Angle X-Ray Scattering Techniques | p. 347 |
| Under-Bump Metallization (UBM) Control Using X-Ray Fluorescence (XRF) | p. 352 |
| Characterization of Copper Line Array Erosion with Picosecond Ultrasonics | p. 357 |
| Comparison of Several Metrology Techniques for In-Line Process Monitoring of Porous SiOCH | p. 362 |
| Microwave impedance Microscope for Non-Contact Electrical Metrology of Nano-Interconnect Materials | p. 367 |
| EUV Lithography: New Metrology Challenges | p. 375 |
| A Laboratory Scale Critical-Dimension Small-Angle X-Ray Scattering Instrument | p. 382 |
| CD Reference Materials Fabricated on Monolithic 200 mm Wafers for Automated Metrology Tool Applications | p. 387 |
| Modeling and Analysis of Scatterometry Signatures for Optical Critical Dimension Reference Material Applications | p. 392 |
| Zero-Order and Super-Resolved Imaging of Arrayed Nanoscale Lines Using Scatterfield Microscopy | p. 397 |
| Line Edge Roughness and Cross Sectional Characterization of Sub-50 nm Structures Using Critical Dimension Small Angle X-Ray Scattering | p. 402 |
| Linewidth Measurement Based on Automatically Matched and Stitched AFM Images | p. 407 |
| Hunting the Origins of Line Width Roughness with Chemical Force Microscopy | p. 413 |
| Metrology for Grayscale Lithography | p. 419 |
| Automated Metrology for SEM Calibration and CD Line Measurements Using Image Analysis and SEM Modeling Methods | p. 423 |
| Metrology Related to the Multilayer Mirrors in an Extreme-Ultraviolet Stepper | p. 428 |
| Analytics and Metrology of Strained Silicon Structures by Raman and Nano-Raman Spectroscopy | p. 435 |
| New Materials and Structures for Transistors Based on Spin, Charge and Wavefunction Phase Control | p. 445 |
| Metrology and Characterization for Extending Silicon CMOS | p. 449 |
| Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires | p. 457 |
| Fluorescent Tag Based Metrology for Self-Assembled Molecular Devices | p. 462 |
| The Characterization of Silicon-Based Molecular Devices | p. 467 |
| SEMPA Imaging for Spintronics Applications | p. 472 |
| Spin-Polarized Inelastic Electron Tunneling Spectroscopy of Molecular Magnetic Tunnel Junctions | p. 477 |
| Impedance and Capacitance Measurement of Individual Carbon Nanotubes | p. 483 |
| An Introduction to the Helium Ion Microscope | p. 489 |
| Dopant Profiling in the TEM, Progress towards Quantitative Electron Holography | p. 497 |
| Energy-Filtered Photoelectron Emission Microscopy (EF-PEEM) for Imaging Nanoelectronic Materials | p. 502 |
| A Method for Precise TEM Sample Preparation Using the FIB Ex-Situ Lift-Out Technique with a Modified Copper Ring in Semiconductor Devices | p. 507 |
| Computational Scanning Electron Microscopy | p. 512 |
| Protocol Optimization for Work-Function Measurements of Metal Gates Using Kelvin Force Microscopy | p. 521 |
| Metrology for High-Frequency Nanoelectronics | p. 525 |
| Scanning Kelvin Force Microscopy for Characterizing Nanostructures in Atmosphere | p. 530 |
| Surface Potential Mapping and Charge Center Detection on Oxidized Silicon Surfaces by Vacuum-Gap Modulation Scanning Tunneling Spectroscopy | p. 535 |
| Effects of Topography and Multi-Asperity Contacts on Nano-Scale Elastic Property Measurements by Atomic Force Acoustic Microscopy | p. 540 |
| AFM Tips for 58 nm and Smaller Node Applications | p. 545 |
| Nano-Raman Imaging Is Reaching Semiconductors | p. 549 |
| Doping Nanocrystals and the Role of Quantum Confinement | p. 555 |
| Nanoelectronics: Metrology and Computation | p. 563 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
What is included with this book?
The New copy of this book will include any supplemental materials advertised. Please check the title of the book to determine if it should include any access cards, study guides, lab manuals, CDs, etc.
The Used, Rental and eBook copies of this book are not guaranteed to include any supplemental materials. Typically, only the book itself is included. This is true even if the title states it includes any access cards, study guides, lab manuals, CDs, etc.
Please wait while the item is added to your bag...
