Fundamentals of III-V Devices HBTs, MESFETs,

* Appendices listing parameters for various materials and transistor types

<b>WILLIAM LIU</b> is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.

Preface

xi

Basic Properties and Device Physics of III-V Materials

1

(68)

Semiconductor Crystalline Properties

1

(13)

Molecular Beam Epitaxy

14

(7)

Metal-Organic Chemical Vapor Deposition

21

(5)

Lattice-Mismatched Layers

26

(1)

Basic Device Physics

27

(15)

Continuity Equations and Quasi-Neutrality Assumption

42

(15)

Material Parameters

57

(12)

References

69

(1)

Problems

69

(69)

Two-Terminal Heterojunction Devices

73

(65)

p+-N Heterojunction under Thermal Equilibrium

73

(14)

p+-N Heterojunction under External Bias

87

(6)

p-N+, P+-n, and P-n+ Heterojunctions

93

(8)

Graded Heterojunctions

101

(9)

Diode Current--Voltage Characteristics

110

(15)

Space-Charge Recombination and Generation Currents

125

(7)

Isotype Heterojunctions

132

(6)

References

138

(1)

Problems

139

(76)

HBT D.C. Characteristics

143

(72)

Basic Transistor Operation

143

(8)

Base Current Components

151

(12)

Current Gain Flattening

163

(3)

Surface Passivation

166

(4)

Base Quasi-Electric Field

170

(7)

Emitter Crowding

177

(4)

Intrinsic Base Resistance

181

(5)

Kirk Effect

186

(10)

Avalanche Breakdown

196

(10)

Collapse of Current Gain

206

(9)

References

215

(1)

Problems

215

(63)

HBT High-Frequency Properties

220

(58)

Intrinsic Common-Base y-Parameters

220

(19)

Intrinsic Common-Emitter y-Parameters

239

(5)

Hybrid-π Model

244

(6)

Parasitic Resistances

250

(10)

Cutoff Frequency (ft)

260

(7)

Maximum Oscillation Frequency (fmax)

267

(6)

Example: Calculation of ft and fmax

273

(5)

References

278

(1)

Problems

278

(82)

FET D.C. Characteristics

281

(79)

Metal-Semiconductor Junction

281

(12)

Basic MESFET Operation

293

(17)

Velocity Saturation in the MESFET

310

(7)

Nonuniform Doping Profiles

317

(6)

Modulation Doping

323

(7)

The Heterojunction FET (HFET)

330

(15)

Velocity Saturation in the HFET

345

(5)

Avalanche Breakdown

350

(10)

References

360

(1)

Problems

361

(82)

FET High-Frequency Properties

371

(72)

Quasi-Static Operation in the HFET

371

(15)

Quasi-Static Operation in the MESFET

386

(9)

Intrinsic y-Parameters

395

(22)

Hybrid-π Model and Channel Resistance

417

(5)

Gate Resistance

422

(7)

Source/Brain Resistances and Parasitic Capacitances

429

(8)

Cutoff and Maximum Oscillation Frequencies

437

(5)

Exemplar Calculation of ft and fmax

442

(1)

References

443

(1)

Problems

444

(29)

Transistor Fabrication And Device Comparison

447

(26)

HBT D.C. Fabrication

447

(8)

HBT R.F. Fabrication

455

(7)

FET Fabrication

462

(5)

HBT and FET Comparison

467

(6)

Reference

473

(1)

Problems

473

(1)

Appendix A Mesfet y-Parameters

474

(7)

Appendix B HFET y-parameters

481

(9)

Appendix C Parasitic Capacitances

490

(5)

Appendix D Universal Constants and Units

495

(1)

Appendix E Semiconductor Material Parameters at Room Temperature

496

(1)

Appendix F Heterojunction Parameters at Room Temperature

497

(2)

Index

499

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Fundamentals of III-V Devices HBTs, MESFETs, and HFETs/HEMTs

Summary

Author Biography

Table of Contents

Supplemental Materials

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Fundamentals of III-V Devices HBTs, MESFETs, and HFETs/HEMTs

Summary

Author Biography

Table of Contents

Supplemental Materials

Digital License