Introduction to Device Modeling and Circuit

This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.

Tor A. Fjeldly received his MSc from the Norwegian University of Science and Technology and his PhD from Brown University. He is a professor at UniK-University Graduate Center and the Norwegian University of Science and Technology, an adjunct professor at the University of Oslo, a visiting professor at Rensselaer Polytechnic Institute, as well as a Fellow of the IEEE and an elected member of the Norwegian Academy of Technical Sciences.

Trond Ytterdal received the M.Sc. and Ph.D. degrees in electrical engineering from the Norwegian Institute of Technology, University of Trondheim, Trondheim, Norway, in 1990 and 1995, respectively. From 1995 to 1996, he was a Research Associate with the Department of Electrical Engineering, University of Virginia, Charlottesville. from 1996 to 1997, he was a Research Scientist with the Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY. from 1997 to 2000, he was a Senior ASIC Designer with Nordic VLSI, Trondheim. Since 2000, he has been on the faculty of the Norwegian University of Science and Technology, Trondheim.

Michael S. Shur received an MSEE (with honors) from St. Petersburg Electrotechnical Institute and a PhD in Physics and a doctor of science degree from A. F. Ioffe Institute. From 1989 to 1996, he was John Money Professor at the University of Virginia, where he served as director of the Applied ElectroPhysics Laboratory. He is currently Roberts Professor of Solid State Electronics, Professor of Physics, Professor of Information Technology, and Director of the Center for Broadband Data Transport Science and Technology at Rensselaer Polytechnic Institute. A Fellow of IEEE and Fellow of APS, he is the author of Introduction to Electronic Devices and coauthor, with Professor Fjeldly and Trund Ytterdal, of Introduction to Device Modeling and Circuit Simulation, both published by Wiley.

PREFACE

xii

1. INTRODUCTION TO SPICE

1

(29)

1.1. Introduction

1

(6)

1.2. SPICE and Beyond

7

(11)

1.2.1. Historical Overview and Versions of SPICE

7

(1)

1.2.2. Principle of Operation

8

(4)

1.2.3. Beyond SPICE

12

(6)

1.3. SPICE Simulation Tutorial

18

(9)

References

27

(1)

Problems

28

(2)

2. CHARGE TRANSPORT IN SEMICONDUCTORS

30

(13)

2.1. Introduction

30

(1)

2.2. Basic Semiconductor Equations

30

(6)

2.3. Material Properties of Important Semiconductors

36

(5)

References

41

(1)

Problems

41

(2)

3. TWO-TERMINAL DEVICES

43

(66)

3.1. Introduction

43

(2)

3.2. p-n Junctions

45

(29)

3.2.1. p-n Junction at Equilibrium

45

(5)

3.2.2. Current-Voltage Characteristic of an Ideal p-n Diode

50

(5)

3.2.3. Nonideal Effects

55

(6)

3.2.4. Capacitance and Small-Signal Equivalent Circuit

61

(4)

3.2.5. SPICE Implementation of p-n Diode Model

65

(2)

3.2.6. SPICE Example: Simple Voltage Regulator

67

(2)

3.2.7. SPICE Example: Temperature Dependence of Diode Characteristics

69

(3)

3.2.8. SPICE Example: Temperature Dependence of Voltage Regulator

72

(1)

3.2.9. SPICE Example: Capacitance-Voltage Characteristics of Diode

72

(2)

3.3. Heterojunctions

74

(7)

3.3.1. Basic Concepts

74

(3)

3.3.2. Current-Voltage Characteristic

77

(1)

3.3.3. Heterojunction Capacitance

78

(1)

3.3.4. SPICE Implementation of Heterostructure Diode Model

79

(1)

3.3.5. SPICE Example: Heterostructure Diode Characteristics

79

(2)

3.4. Metal-Semiconductor Junctions

81

(10)

3.4.1. Schottky Barriers

81

(4)

3.4.2. Schottky Barrier Current-Voltage Characteristic

85

(1)

3.4.3. Schottky Barrier Capacitance

86

(1)

3.4.4. Ohmic Contacts

87

(1)

3.4.5. SPICE Example: Diode-Switching Transients

88

(3)

3.5. Metal-Insulator-Semiconductor Capacitor

91

(13)

3.5.1. Interface Charge

91

(6)

3.5.2. Threshold Voltage

97

(1)

3.5.3. MIS Capacitance

98

(4)

3.5.4. Unified Charge Control Model for MIS Capacitors

102

(2)

References

104

(1)

Problems

104

(5)

4. BIPOLAR JUNCTION TRANSISTORS

109

(45)

4.1. Introduction

109

(1)

4.2. BJT Basics

110

(10)

4.2.1. Modes of Operation

111

(4)

4.2.2. Current-Voltage Characteristics of BJTs

115

(5)

4.3. BJT Modeling

120

(19)

4.3.1. Ebers-Moll Model

120

(4)

4.3.2. SPICE Example: Emitter-Coupled Logic

124

(1)

4.3.3. Gummel-Poon Model

125

(5)

4.3.4. Implementation of Gummel-Poon Model in SPICE

130

(2)

4.3.5. SPICE Example: Common-Emitter Current Gain

132

(1)

4.3.6. BJT Small-Signal Modeling

133

(4)

4.3.7. SPICE Example: Small-Signal Frequency Response

137

(2)

4.4. Heterojunction Bipolar Transistor

139

(9)

4.4.1. Principle of Operation

139

(3)

4.4.2. Thermionic Emission-Diffusion Model for HBT

142

(2)

4.4.3. Nonideal Effects in the HBT Model

144

(2)

4.4.4. Implementation of HBT Model in AIM-Spice

146

(2)

References

148

(1)

Problems

148

(6)

5. FIELD-EFFECT TRANSISTORS

154

(52)

5.1. Introduction

154

(3)

5.2. Principles of Operation

157

(9)

5.2.1. MOSFET Operation

157

(3)

5.2.2. MESFET Operation

160

(1)

5.2.3. HFET Operation

161

(2)

5.2.4. Amorphous Silicon TFT Operation

163

(1)

5.2.5. Polysilicon TFT Operation

164

(2)

5.3. Basic MOSFET Models

166

(19)

5.3.1. Gradual Channel Approximation

166

(1)

5.3.2. Meyer I-V Model

167

(3)

5.3.3. Simple Charge Control Model

170

(5)

5.3.4. Velocity Saturation Model

175

(3)

5.3.5. Comparison of Basic MOSFET Models

178

(2)

5.3.6. SPICE Implementation of Basic MOSFET I-V Models

180

(3)

5.3.7. SPICE Example: MOSFET I-V Characteristics

183

(2)

5.4. Basic MESFET Models

185

(10)

5.4.1. Shockley Model

185

(5)

5.4.2. Velocity Saturation Models

190

(3)

5.4.3. SPICE Implementation of Basic MESFET Model

193

(1)

5.4.4. SPICE Example: MESFET Subthreshold Characteristics

193

(2)

5.5. Basic HFET Model

195

(6)

5.5.1. SPICE Example: HFET Saturation Characteristics

196

(5)

References

201

(1)

Problems

202

(4)

6. ADVANCED FET MODELING

206

(76)

6.1. Introduction

206

(4)

6.1.1. Challenges in Advanced FET Modeling

207

(1)

6.1.2. Advanced FET Modeling Approach

208

(2)

6.2. Universal FET Modeling Approach

210

(14)

6.2.1. Unified Charge Control Model for FETs

210

(2)

6.2.2. Basics of the Universal FET Model

212

(6)

6.2.3. High-Field Effects

218

(4)

6.2.4. Short-Channel Effects

222

(2)

6.3. Universal MOSFET Model

224

(8)

6.3.1. MOSFET I-V Model

224

(2)

6.3.2. MOSFET C-V Model

226

(2)

6.3.3. Implementation in AIM-Spice

228

(3)

6.3.4. SPICE Example: CMOS Operational Amplifier

231

(1)

6.4. Universal MESFET Model

232

(14)

6.4.1. MESFET I-V Model

234

(3)

6.4.2. MESFET C-V Model

237

(5)

6.4.3. Implementation in AIM-Spice

242

(2)

6.4.4. SPICE Example: MESFET Ring Oscillator

244

(2)

6.5. Universal HFET Model

246

(11)

6.5.1. HFET I-V Model

248

(2)

6.5.2. HFET C-V Model

250

(3)

6.5.3. Implementation in AIM-Spice

253

(1)

6.5.4. SPICE Example: Gate Leakage in HFETs

253

(4)

6.6. Universal a-Si:H TFT Model

257

(7)

6.6.1. a-Si:H TFT I-V Model

260

(1)

6.6.2. a-Si:H TFT C-V Model

261

(2)

6.6.3. SPICE Example: a-Si:H TFT EEL inverter

263

(1)

6.7. Universal Poly-Si TFT Model

264

(4)

6.7.1. Poly-Si TFT I-V Model

265

(1)

6.7.2. Poly-Si TFT C-V Model

266

(1)

6.7.3. SPICE Example: Poly-Si TFT Inverter

266

(2)

6.8. BSIM3 MOSFET Model

268

(6)

6.8.1. Threshold Voltage

268

(2)

6.8.2. Effective Carrier Mobility

270

(1)

6.8.3. Unified Drain Current

270

(1)

6.8.4. Intrinsic Capacitance Model

271

(1)

6.8.5. Non-Quasi-Static Model

271

(3)

References

274

(2)

Problems

276

(6)

APPENDICES

282

(119)

Appendix A1. AIM-Spice Users Manual

282

(49)

A1.1. Introduction

282

(1)

A1.2. AIM-Spice

283

(25)

A1.3. AIM-Postprocessor

308

(22)

References

330

(1)

Appendix A2. AIM-Spice Reference

331

(64)

A2.1. Introduction

331

(1)

A2.2. Types of Analyses

332

(5)

A2.3. Model Parameter Specifications

337

(57)

References

394

(1)

Appendix A3. Temperature Dependence of Mobilities in Silicon

395

(2)

References

396

(1)

Appendix A4. Parasitic Series Resistances in FETs

397

(4)

References

399

(2)

INDEX

401

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Introduction to Device Modeling and Circuit Simulation

Summary

Author Biography

Table of Contents

Supplemental Materials