Microelectronics Technology Polymers for Advanced Imaging and Packaging

, by Reichmanis, Elsa; Ober, Christopher K.; MacDonald, Scott A.; Iwayanagi, Takao; Nishikubo, Tadatomi

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ISBN: 9780841233324 | 0841233322
Cover: Hardcover
Copyright: 5/5/1995

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Provides an up-to-date assessment of chemically amplified resist materials chemistry and process considerations. Reports novel chemistry for single layer 193nm lithographic applications. Discusses new approaches to silicon-containing resists and multilevel processes. Explores the design of low-dielectric polymer materials for microelectronic applications.

An Analysis of Process Issues with Chemically Amplified Positive Resists
The Annealing Concept for Environmental Stabilization of Chemical Amplification Resists
Structure-Property Relationship of Acetal- and Ketal-Blocked Polyvinyl Phenols as Polymeric Binder in Two-Component Positive Deep-UV Photoresists
Lithographic Effects of Acid Diffusion in Chemically Amplified Resists
Acid Diffusion in Chemically Amplified Resists: The Effect of Prebaking and Post-Exposure Baking Temperature
Correlation of the Strength of Photogenerated Acid with the Post-Exposure Delay Effect in Positive-Tone Chemically Amplified Deep-UV Resists
Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers
Water-Soluble Onium Salts: New Class of Acid Generators for Chemical Amplification Positive Resists
Photoacid and Photobase Generators: Arylmethyl Sulfones and Benzyhydrylammonium Salts
Functional Imaging with Chemically Amplified Resists
Hydrogen Bonding in Sulfone- and N-Methylmaleimide-Containing Resist Polymers with Hydroxystyrene and Acetoxystyrene: Two-Dimensional NMR Studies
NMR Investigation of Miscibility in Novolac-Poly(2-methyl-1-pentene sulfone) Resists
Styrylmethylsulfonamides: Versatile Base-Solubilizing Components of Photoresist Resins
4-Methanesulfonyloxystyrene: A Means of Improving the Properties of tert-Butoxycarbonyloxystyrene-Based Polymers for Chemically Amplified Deep-UV Resists
Dienone-Phenol Rearrangement Reaction: Design Pathway for Chemically Amplified Photoresists
Single-Layer Resist for ArF Excimer Laser Exposure Containing Aromatic Compounds
Design Considerations for 193-nm Positive Resists
Top-Surface Imaged Resists for 193-nm Lithography
Silicon-Containing Block Copolymer Resist Materials
A Top-Surface Imaging Approach Based on the Light-Induced Formation of Dry-Etch Barriers
Plasma-Developable Photoresist System Based on Polysiloxane Formation at the Irradiated Surface: A Liquid-Phase Deposition Method
New Polysiloxanes for Chemically Amplified Resist Applications
Environmentally Friendly Polysilane Photoresists
Fluoropolymers with Low Dielectric Constants: Triallyl Ether-Hydrosiloxane Resins
Photophysics, Photochemistry, and Intramolecular Charge Transfer of Polyimides
Structure, Properties, and Intermolecular Charge Transfer of Polyimides
Application of Polyisoimide as a
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Microelectronics Technology Polymers for Advanced Imaging and Packaging

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