Modern Semiconductor Devices for Integrated

Modern Semiconductor Devices for Integrated Circuits, First Editionintroduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.

Chenming Calvin Hu holds the TSMC Distinguished Professor Chair of Microelectronics at University of California, Berkeley. He is a member of the US Academy of Engineering and a foreign member of the Chinese Academy of Sciences. From 2001 to 2004, he was the Chief Technology Officer of TSMC. A Fellow of the Institute of Electrical and Electronic Engineers (IEEE), he has been honored with the Jack Morton Award in1997 for his research on transistor reliability, the Solid State Circuits Award in 2002 for co-developing the first international standard transistor model for circuit simulation, and the Jun-ichi Nishizawa Medal in 2009 for exceptional contributions to device physics and scaling. He has supervised over 60 Ph.D. student theses, published 800 technical articles, and received more than 100 US patents. His other honors include Sigma Xi Moni Ferst Award, R&D 100 Award, and UC Berkeley’s highest award for teaching — the Berkeley Distinguished Teaching Award.

For additional information, visit the author's Web site.

Preface	p. xiii
About the Author	p. xv
Electrons and Holes in Semiconductors	p. 1
Silicon Crystal Structure	p. 1
Bond Model of Electrons and Holes	p. 4
Energy Band Model	p. 8
Semiconductors, Insulators, and Conductors	p. 11
Electrons and Holes	p. 12
Density of States	p. 15
Thermal Equilibrium and the Fermi Function	p. 16
Electron and Hole Concentrations	p. 19
General Theory of n and p	p. 25
Carrier Concentrations at Extremely High and Low Temperatures	p. 28
Chapter Summary	p. 29
Problems	p. 30
References	p. 33
General References	p. 34
Motion and Recombination of Electrons and Holes	p. 35
Thermal Motion	p. 35
Drift	p. 38
Diffusion Current	p. 46
Relation Between the Energy Diagram and V, E	p. 47
Einstein Relationship Between D and ¿	p. 48
Electron-Hole Recombination	p. 50
Thermal Generation	p. 52
Quasi-Equilibrium and Quasi-Fermi Levels	p. 52
Chapter Summary	p. 54
Problems	p. 56
References	p. 58
General References	p. 58
Device Fabrication Technology	p. 59
Introduction to Device Fabrication	p. 60
Oxidation of Silicon	p. 61
Lithography	p. 64
Pattern Transfer-Etching	p. 68
Doping	p. 70
Dopant Diffusion	p. 73
Thin-Film Deposition	p. 75
Interconnect-The Back-End Process	p. 80
Testing, Assembly, and Qualification	p. 82
Chapter Summary-A Device Fabrication Example	p. 83
Problems	p. 85
References	p. 87
General References	p. 88
PN and Metal-Semiconductor Junctions	p. 89
PN Junction	p. 89
Building Blocks of the PN Junction Theory	p. 90
Depletion-Layer Model	p. 94
Reverse-Biased PN Junction	p. 97
Capacitance-Voltage Characteristics	p. 98
Junction Breakdown	p. 100
Carrier Injection Under Forward Bias-Quasi-Equilibrium Boundary Condition	p. 105
Current Continuity Equation	p. 107
Excess Carriers in Forward-Biased PN Junction	p. 109
PN Diode IV Characteristics	p. 112
Charge Storage	p. 115
Small-Signal Model of the Diode	p. 116
Application to Optoelectronic Devices	p. 117
Solar Cells	p. 117
Light-Emitting Diodes and Solid-State Lighting	p. 124
Diode Lasers	p. 128
Photodiodes	p. 133
Metal-Semiconductor Junction	p. 133
Schottky Barriers	p. 133
Thermionic Emission Theory	p. 137
Schottky Diodes	p. 138
Applications of Schottky Diodes	p. 140
Quantum Mechanical Tunneling	p. 141
Ohmic Contacts	p. 142
Chapter Summary	p. 145
Problems	p. 148
References	p. 156
General References	p. 156
Mos Capacitor	p. 157
Flat-Band Condition and Flat-Band Voltage	p. 158
Surface Accumulation	p. 160
Surface Depletion	p. 161
Threshold Condition and Threshold Voltage	p. 162
Strong Inversion Beyond Threshold	p. 164
MOS C-V Characteristics	p. 168
Oxide Charge-A Modification to V_fb and V_t	p. 172
Poly-Si Gate Depletion-Effective Increase in T_ox	p. 174
Inversion and Accumulation Charge-Layer Thicknesses-Quantum Mechanical Effect	p. 176
CCD Imager and CMOS Imager	p. 179
Chapter Summary	p. 184
Problems	p. 186
References	p. 193
General References	p. 193
MOS Transistor	p. 195
Introduction to the MOSFET	p. 195
Complementary MOS (CMOS) Technology	p. 198
Surface Mobilities and High-Mobility FETs	p. 200
MOSFET V_t Body Effect, and Steep Retrograde Doping	p. 207
Q_INV in MOSFET	p. 209
Basic MOSFET IV Model	p. 210
CMOS Inverter-A Circuit Example	p. 214
Velocity Saturation	p. 219
MOSFET IV Model with Velocity Saturation	p. 220
Parasitic Source-Drain Resistance	p. 225
Extraction of the Series Resistance and the Effective Channel Length	p. 226
Velocity Overshoot and Source Velocity Limit	p. 228
Output Conductance	p. 229
High-Frequency Performance	p. 230
MOSFET Noises	p. 232
SRAM, DRAM, Nonvolatile (Flash) Memory Devices	p. 238
Chapter Summary	p. 245
Problems	p. 247
References	p. 256
General References	p. 257
MOSFETs in ICs-Scaling, Leakage, and Other Topics	p. 259
Technology Scaling-For Cost, Speed, and Power Consumption	p. 259
Subthreshold Current-"Off" Is Not Totally "Off"	p. 263
V_t Roll-Off-Short-Channel MOSFETs Leak More	p. 266
Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage	p. 270
How to Reduce W_dep	p. 272
Shallow Junction and Metal Source/Drain MOSFET	p. 274
Trade-Off Between I_on and I_off and Design for Manufacturing	p. 276
Ultra-Thin-Body SOI and Multigate MOSFETs	p. 277
Output Conductance	p. 282
Device and Process Simulation	p. 283
MOSFET Compact Model for Circuit Simulation	p. 284
Chapter Summary	p. 285
Problems	p. 286
References	p. 288
General References	p. 289
Bipolar Transistor	p. 291
Introduction to the BJT	p. 291
Collector Current	p. 293
Base Current	p. 297
Current Gain	p. 298
Base-Width Modulation by Collector Voltage	p. 302
Ebers-Moll Model	p. 304
Transit Time and Charge Storage	p. 306
Small-Signal Model	p. 310
Cutoff Frequency	p. 312
Charge Control Model	p. 314
Model for Large-Signal Circuit Simulation	p. 316
Chapter Summary	p. 318
Problems	p. 319
References	p. 323
General References	p. 323
Derivation of the Density of States	p. 325
Derivation of the Fermi-Dirac Distribution Function	p. 329
Self-Consistencies of Minority Carrier Assumptions	p. 333
Answers to Selected Problems	p. 337
Index	p. 341
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Modern Semiconductor Devices for Integrated Circuits

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