Power Semiconductors

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ISBN: 9780824725693 | 0824725697
Cover: Hardcover
Copyright: 6/2/2006

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Explaining the physics and characteristics of power semiconductor devices, this book presents an overview of various classes of power semiconductors. It provides insight into how they work and the characteristics of the various components from the viewpoint of the user, going through all modern power semiconductor device types. The physics are explained in reasonable detail, providing the precise amount of information needed to fully understand the component's behavior in the application. Exploring the specific strengths and weaknesses of each device type, the book demonstrates how these devices fit into the system and how they will behave there.

PREFACE AND INTRODUCTION

vii

CHAPTER 1 FUNDAMENTALS OF SEMICONDUCTOR PHYSICS

(36)

1.1 Structure and Properties of Silicon

(13)

1.2 Charge Transport

(8)

1.3 Carrier Injection

(1)

1.4 Generation and Recombination of Charge Carriers

(8)

1.5 The Continuity Equation

(2)

1.6 The Poisson Equation

(1)

1.7 High Field Effects

(4)

CHAPTER 2 THE PN-JUNCTION

(28)

2.1 The Built-in Voltage of a pn-Junction

(2)

2.2 The Depletion Layer (Space-Charge Region)

(2)

2.3 The Current-Voltage Characteristics of the pn-Junction

(9)

2.4 The Emitter Efficiency

(1)

2.5 The Real pn-Junction

(12)

CHAPTER 3 THE PIN-DIODE

(40)

3.1 Fundamental Structure of High-Voltage Diodes

(2)

2.2 Conducting State of the pin-Diode

(11)

3.3 The Dynamic Behavior of the pin-Diode

(11)

3.4 Snap-Off During Diode Reverse Recovery

(5)

3.5 The Limits of the Operating Conditions of a Diode

(2)

3.6 The Design of Modern pin-Diodes

(9)

CHAPTER 4 THE BIPOLAR TRANSISTOR

105

(18)

4.1 The Structure of the Bipolar Transistor

105

(1)

4.2 The Current Amplification of the BIT

106

(8)

4.3 Current (Injection) Breakdown of the Bipolar Transistor

114

(3)

4.4 Forward Conduction Voltage Drop

117

(1)

4.5 Base Push-Out ("Kirk" Effect)

118

(1)

4.6 Second Breakdown

119

(4)

CHAPTER 5 THE THYRISTOR

123

(30)

5.1 Structure and Operation Principle of the Thyristor

123

(3)

5.2 The Trigger Condition

126

(1)

5.3 Static Current-Voltage Characteristics

126

(2)

5.4 Forward Blocking Mode and Metastable Region

128

(4)

5.5 Latched State of the Thyristor

132

(4)

5.6 The Thyristor in the Reverse Blocking Mode

136

(2)

5.7 Turn-on Behavior

138

(10)

5.8 Turn-off Behavior

148

(5)

CHAPTER 6 THE GTO AND GCT/IGCT

153

(30)

6.1 The GTO

154

(21)

6.2 The GCT (Gate Commutated Thyristor)

175

(8)

CHAPTER 7 THE POWER MOSFET

183

(40)

7.1 Basic Theory of the MOSFET

183

(9)

7.2 The I(V) Characteristics of the MOSFET

192

(5)

7.3 The Structure of the Power MOSFET

197

(13)

7.4 The Switching Behavior of the Power MOSFET

210

(9)

7.5 Avalanche Operation

219

(2)

7.6 The Source-Drain Diode (Body Diode)

221

(2)

CHAPTER 8 THE IGBT

223

(30)

8.1 Structure and Operation Principle of the IGBT

224

(2)

8.2 The Current-Voltage Characteristics of the IGBT

226

(6)

8.3 The Switching Behavior of the IGBT

232

(8)

8.4 Short Circuit Behavior

240

(1)

8.5 Ruggedness of the IGBT

241

(4)

8.6 The IGBT's Losses Trade-Off

245

(8)

REFERENCES AND ADDITIONAL READING

253

(2)

LIST OF SYMBOLS

255

(2)

CONSTANTS

257

(1)

UNITS

258

(1)

UNIT PREFIXES

259

(1)

WRITING CONVENTIONS

260

(1)

CIRCUIT SYMBOLS IN ELECTRICAL ENGINEERING

261

(2)

MATERIAL PROPERTIES AT 300 K

263

(1)

ACRONYMS

264

(1)

INDEX

265

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Power Semiconductors

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