Proceedings IEEE Lester Eastman Conference on High Performance Devices

, by Lundardi, Leda; Zolper, John C.; Leoni, Robert E., Iii; Kolodzey, James

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ISBN: 9780780374782 | 0780374789
Cover: Paperback
Copyright: 11/1/2002

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TUESDAY, AUGUST 6, 2002

SESSION I

PLENARY: 30 YEARS OF COMPOUND SEMICONDUCTOR RESEARCH

Leda Lunardi

John Zolper

Introductory Talk Honoring Professor Eastman

(3)

M.S. Shur

Three Decades of Our Graduate Research Education in Compound Semiconductor Materials and Devices

(5)

L. Eastman

Progress and Challenges in Compound Semiconductor Electronics

(13)

U. Mishra

The Status of Fiber Optics

(2)

D. Welch

Three Dimensional Integration in Silicon Electronics

(10)

S. Tiwari

30 Years of Accomplishments in Compound Semiconductor Materials and Devices Attributable to Prof. Lester F. Eastman

(7)

M.N. Yoder

SESSION II

SiC

Erhart Kohn

Robert Sadler

Power Amplification in UHF Band Using SiC RF Power BJTS

(9)

A. Agarwal

C. Capell

J. Milligan

J.W. Palmour

B. Phan

J. Stambaugh

H. Bartlow

K. Brewer

Cree Microwave

High-Performance Power BJTS in 4H-SiC

(8)

C.-F. Huang

J.A. Cooper Jr.

100 a and 3. 1 KV 4H-SiC GTO Thyristors

(7)

S. Van Campen

A. Ezis

J. Zingaro

G. Storaska

R. C. Clarke

K. Elliott

Northrop Grumman

V. Temple

D. Hits

M. Thompson

K. Roe

T. Hansen

Novel Ni-Based OHMIC Contacts to N-SiC for High Temperature and High Power Device Applications

(10)

M.W. Cole

J.D. Demaree

C.W. Hubbard

M.C. Wood

M.H. Ervin

Channel Recessed 4H-SiC Mesfets with FT of 14.5GHz and FMAX of 40GHz

(8)

H.-Y. Cha

C.I. Thomas

G. Koley

H. Kim

L.F. Eastman

M.G. Spencer

Inversion Channel Mosfets in 3C-SiC on Silicon

(7)

J. Wan

M.A. Capano

M.R. Melloch

J.A. Cooper Jr.

Advances in Diamond Surface Channel Fet Technology with Focus on Large Signal Properties

(11)

M. Kubovic

A. Aleksov

A. Denisenko

E. Kohn

POSTER SESSION

Greg DeSalvo

Simulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN Hemt Technology

101

(7)

V. Paidi

S. Xie

R. Coffie

U.K. Mishra

S. Long

M.J.W. Rodwell

Thermal and Trapping Effects in GaN-Based Mesfets

108

(10)

S.S. Islam

A.F.M. Anwar

Dependence of Power and Efficiency of AlGaN/GaN Hemt's on the Load Resistance for Class B BIAS

118

(8)

V. Kaper

V. Tilak

B. Green

T. Prunty

J. Smartt

L.F. Eastman

J.R. Shealy

AIGaN/GaN Hemts Grown by Molecular Beam Epitaxy on Sapphire, SiC, and HVPE GaN Templates

126

(8)

N.G. Weimann

M.J. Manfra

J.W.P. Hsu

K. Baldwin

L.N. Pfeiffer

K.W. West

S.N.G. Chu

D.V. Lang

R.J. Molnar

Reduction of Buffer Layer Leakage Current in AlGaN/GaN HEMTs Grown by Plasma MBE

134

(1)

S.C. Binari

D.F. Storm

D.S. Katzer

J.A. Roussos

B.V. Shanabrook

E.R. Glaser

Subterahertz Detection by High Electron Mobility Transistors at Large Forward Gate BIAS

135

(8)

Y. Deng

W. Knap

S. Rumyantsev

M.S. Shur

R. Gaska

A. Khan

V. Ryzhii

E. Kaminska

A. Piotrowska

J. Lusakowski

Compact Circuit Model of GaN HFETs for Mixed Signal Circuits

143

(6)

A. Conway

P. Asbeck

J. Jensen

W.S. Wong

M. Mokhtari

J. Moon

Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors

149

(6)

S. Nuttinck

E. Gebara

J. Laskar

N. Rorsman

H. Zirath

J. Olsson

K. Eklund

M. Harris

Design of GaN / AlGaN Hemt Class-E Power Amplifier Considering Trapping and Thermal Effects

155

(9)

S. S. Islam

A.F.M. Anwar

Low Frequency Noise In Al0.4Ga0.6N Thin Films

164

(8)

N. Pala

S. Rumyantsev

R. Gask

M. Shur

J. Yang

X. Hu

G. Simin

M.A. Khan

Advanced Large-Signal Modeling of GaN-HEMTs

172

(9)

M. Berroth

E. Chigaeva

I. Dettmann

N. Wieser

W. Vogel

H. Roll

F. Scholz

H. Schweizer

Microwave Power SiC MESFETs and GaN HEMTs

181

(5)

A.P. Zhang

L.B. Rowland

E.B. Kaminsky

J.W. Kretchmer

R.A. Beaupre

J.L. Garrett

J.B. Tucker

B.J. Edward

J. Foppes

A.F. Allen

Lockheed Martin

Simulation, Characterization and Design of Epitaxial Emitter NPN 4H-SiC BJTs for Amplifier Applications

186

(7)

P.A. Losee

R.J. Gutmann

T.P. Chow

S.-H. Ryu

A.K. Agarwal

J.W. Palmour

RF 4H-SiC Bipolar Junction Transistors

193

(8)

I. Perez-Wurfl

B. Van Zeghbroeck

A. Konstantinov

ACREO, J. Torvik

Ge Incorporation in SiC and the Effects on Device Performance

201

(6)

K.J. Roe

M.W. Dashiell

G. Xuan

E. Ansorge

G. Katulka

N. Sustersic

X. Zhang

J. Kolodzey

Molecular Beam Deposition of Low-Resistance Polycrystalline InAs

207

(6)

D. Scott

M. Urteaga

N. Parthasarathy

J.R. English

M.J.W. Rodwell

Epitaxial Ternary and Quaternary III-V Antimonide Substrates

213

(10)

M.G. Mauk

J.A. Cox

O.V. Sulima

S. Datta

A.N. Tata

Evaluation of Interfaces in Narrow InAs / AlSb Quantum Wells

223

(5)

J. Tang

D.C. Larrabee

B.E. Brinson

G.A. Khodaparast

J. Kono

K. Ueda

Y. Nakajima

O. Suekane

S. Saga

M. Inoue

K.I. Kolokolov

J. Li

C.Z. Ning

Picosecond Time-Resolved Cyclotron Resonance Study of InSb Quantum Wells in a Quantizing Magnetic Field

228

(5)

D.C. Larrabee

G.A. Khodaparast

J. Konot

D.S. King

S.J. Chung

M.B. Santos

Monte Carlo Simulation of InGaAs/InAlAs Hemts with a Quantum Correction Potential

233

(7)

B. Wu

T.-W. Tang

An Ebers-Moll Model for Heterostructure Bipolar Transistors with Tunnel Junctions

240

(5)

J.M. Lopez-Gonzalez

D.M. Keogh

P.M. Asbeck

InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-Implanted InP Substrates by Metal-Organic Molecular Beam Epitaxy

245

(3)

W.J. Sung

R.F. Kopf

D.J. Werder

C.T. Liu

Y.K. Chen

J. Chen

E.J. Zhu

M.F. Chang

CCD Measurements of Guided Optical Mode Attenuation in GaN Layers

248

(6)

G. Bu

D. Ciplys

M. Shur

R. Gaska

R. Rimeika

A. Khan

J. Yang

Physics of GaN-Based High-Power Lasers

254

(5)

J. Piprek

S. Nakamura

The Electrical Effects of DNA as the Gate Electrode of Mos Transistors

259

(6)

M.W. Dashiell

A.T. Kalambur

R. Leeson

K.J. Roe

J.F. Rabolf

J. Kolodzey

SiGe Diffusion Barriers for P-Doped Si/SiGe Resonant Interband Tunnel Diodes

265

(5)

N. Jin

A. T. Rice

P.R. Berger

P.E. Thompson

P.R. Chi

D.S. Simons

Silicon-Germanium Power Devices at Low Temperatures for Deep-Space Applications

270

(6)

A. Vijh

V.J. Kapoor

R.L. Patterson

MMIC Compatible AlSb/InAs Hemt with Stable AlGaSb Buffer Layers

276

(5)

R. Tsai

M. Barsky

J. Lee

P.H. Liu

A. Gutierrez

R. Lai

C. Namba

J.B. Boos

B.R. Bennett

R. Magno

DC and RF Performance of InAs-Based Bipolar Transistors at very Low BIAS

281

(6)

D. Sawdai

C. Monier

A. Cavus

T. Block

R. Sandhu

A. Gutierrez-Aitken

M.S. Goorsky

J. Woodall

G. Wicks

WEDNESDAY, AUGUST 7, 2002

SESSION III

ABCS MATERIALS AND DEVICES

Christie Marrian

April Brown

An InAs Based Transistor Approach to Terahertz Electronics: Concepts and Materials Science

287

(1)

J.M. Woodall

Antimony-Based Quaternary Alloys for High-Speed Low-Power Electronic Devices

288

(9)

R. Magno

B.R. Bennett

K. Ikossi

M.G. Ancona

E.R. Glaser

N. Papanicolaou

J.B. Boos

B.V. Shanabrook

A. Gutierrez

AlGaAsSb-InGaAsSb-GaSb Epitaxial Hetero-Structures for Uncooled Infrared Detectors

297

(10)

O.V. Sulima

S. Datta

J.A. Cox

M.G. Mauk

S.B. Rafol

Ultrafast Optical Manipulation of Ferromagnetic Order in InMnAs/GaSb

307

(8)

J. Wang

G.A. Khodaparast

J. Kono

T. Slupinski

A. Oiwa

H. Munekata

AlGaAsSb/InGaAs/AlGaAsSb Metamorphic Hemts

315

(9)

Richard T. Webster

A.F.M. Anwar

J.L. Heaton

K. Nichols

S. Duncan

Intersubband Transitions in Narrow InAs/AlSb Quantum Wells

324

(10)

D.C. Larrabee

J. Tang

M. Liang

G.A. Khodaparast

J. Kono

K.I. Kolokolov

J. Li

C.Z. Ning

K. Ueda

Y. Nakajima

O. Suekane

S. Sasa

M. Inoue

Performance and Modeling of Antimonide-Based Heterostructure Backward Diodes for Millimeter-Wave Detection

334

(9)

P. Fay

J.N. Schulmant

S. Thomas III

D.H. Chow

Y. K. Boegemant

K. S. Holabirdt

SESSION IV

HIGH SPEED AND NOVEL PROCESS TECHNOLOGIES

Alan Seabaugh

Laura Rea

InP/GaAsSb/InP Double Heterojunction Bipolar Transistors

343

(9)

C.R. Bolognesi

M.W. Dvorak

S.P. Watkins

40 GHz MMIC Power Amplifier in InP DHBT Technology

352

(6)

Y. Wei

K. Sundararajan

M. Urteaga

Z. Griffith

D. Scott

V. Paidi

N. Parthasarathy

M. Rodwell

GaInP/GaAs Tunnel Collector HBTS: Base-Collector Barrier Height Analysis

358

(6)

D.M. Keogh

R.J. Welty

J. Lopez-Gonzalez

R.E. Welser

P.M. Asbeck

C.R. Lutz

On-Chip Out-Or-Plane High-Q Inductors

364

(10)

K. Van Schuylenbergh

C.L. Chua

D.K. Fork

J.-P. Lu

B. Griffiths

Packaging of Microwave Integrated Circuits Operating Beyond 100 GHZ

374

(10)

E. Daniel

V. Sokolov

S. Sommerfeldt

J. Bublitz

K. Olson

B. Gilbert

Mayo Foundation

L. Samoska

D. Chow

The Heterogeneous Integration of InAlAs/InGaAs Heterojunction Diodes on GaAs: Impact of Wafer Bonding on Structural and Electrical Characteristics

384

(9)

T.-H. Kim

C. Yi

A.S. Brown

P. Moran

T. Kuech

Silicon Tunnel Diodes Formed by Proximity Rapid Thermal Diffusion

393

(9)

J. Wang

D. Wheeler

Y. Yan

J. Zhao

S. Howard

A. Seabaugh

The Design and Fabrication of Microdisk Resonators for Terahertz Frequency Operation

402

(7)

T. N. Adam

S. Sill

S. K. Ray

R. T. Troeger

D. Prather

J. Kolodzey

RF and DC Characteristics of Low-Leakage InAsl AlSb HFETs

409

(6)

B. Brar

G. Nagy

J. Bergman

G. Sullivan

P. Rowell

H.K. Lin

M. Dahlstrom

C. Kadow

M. Rodwell

THURSDAY, AUGUST 8, 2002

SESSION V

GaN

Michael Spencer

Alan Doolittle

High Linearity, Robust, AlGaN-GaN Hemts for Lna & Receiver ICS

415

(7)

P. Parikh

Y. Wu

M. Moore

P. Chavarkar

U. Mishra

R. Neidhard

L. Kehias

T. Jenkins

AlGaN/GaN Hemt High-Power and Low-Noise Performance at F ~ 20 GHz

422

(6)

I.P. Smorchkova

M. Wojtowicz

R. Tsai

R. Sandhu

M. Barsky

C. Namba

P.H. Liu

R. Dia

M. Truong

D. Ko

J. Wang

H. Wang

A. Khan

Effect of Recess Length on DC and RF Performance of Gate-Recessed AlGaN/GaN HEMTs

428

(8)

A. Kuliev

V. Kumar

R. Schwindt

D. Selvanathan

I. Adesida

A. M. Dabiran

P. Chow

Reliability Evaluation of AlGaN/GaN HEMTs Grown on SiC Substrate

436

(7)

C. Lee

L. Witkowski

M. Muir

H.Q. Tserng

P. Saunier

H. Wang

J. Yang

M. A. Khan

Dynamic Loadline Analysis of AlGaN/GaN HEMTS

443

(10)

B.M. Green

V.S. Kaper

V. Tilak

J.R. Shealy

L.F. Eastman

Characterization and Analysis of Gate and Drain Low-Frequency Noise in AlGaN/GaN HEMTs

453

(8)

S.S.H. Hsu

P. Valizadeh

D. Pavlidis

J.S. Moon

M. Micovic

D. Wong

T. Hussain

Digital Etching for Highly Reproducible Low Damage Gate Recessing on AlGaN/GaN HEMTs

461

(9)

D. Buttari

S. Heikman

S. Keller

U.K. Mishra

Surface Trapping Effects Observed in AlGaN/GaN HEFTs and Heterostructures

470

(7)

G. Koley

V. Tilak

H.-Y. Cha

L.F. Eastman

M.G. Spencer

Comparison of Surface Passivation on Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors

477

(10)

B. Luo

R. Mehandru

J. Kim

F. Ren

B.P. Gila

A.R. Onstine

C.R. Abernathy

S.J. Pearton

R. Fitch

J. Gillespie

T. Jenkins

J. Sewell

D. Via

A. Crespo

Y. Irokawa

Impact Ionization in High Performance AlGaN/GaN HEMTS

487

(5)

B. Brar

K. Boutros

R.E. DeWames

V. Tilak

R. Shealy

L. Eastman

OHMIC Contact Technology in III-V Nitrides Using Polarization Effects in Cap Layers

492

(10)

Th. Gessmann

J.W. Graff

Y.-L. Li

E.L. Waldron

E.F. Schubert

AlGaN/GaN-HEMTS for Power Applications up to 40 GHz

502

R. Kiefer

R. Quay

S. Muller

K. Kohler

F. van Raay

B. Raynor

W. Pletschen

H. Massier

S. Ramberger

M. Mikulla

G. Weimann

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