Selected Topics in Group IV and II-VI Semiconductors : Proceedings of Symposium L - 6th International Symposium on Silicon Molecular Beam Epitazy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference,

, by Kasper, E.; Parker, E. H. C.; Triboulet, R.; Rudolph, P.; Muller-Vogt, G.

Note: Supplemental materials are not guaranteed with Rental or Used book purchases.

ISBN: 9780444824110 | 0444824111
Cover: Hardcover
Copyright: 6/1/1996

Rent

(Recommended)

$239.05

Term

Due

Price

Semester

Dec 13

$251.63

Quarter

Aug 16

$239.05

Short Term

Jul 7

$226.47

*This item is part of an exclusive publisher rental program and requires an additional convenience fee. This fee will be reflected in the shopping cart.
Buy New

Usually Ships in 3-5 Business Days

$343.79
eBook

Available Instantly

Online: 1825 Days

Downloadable: Lifetime Access

$383.63

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Preface
Quantitative analysis of light emission from SiGe quantum wells	p. 1
Optimisation and stability of optical spectra of novel Si-Ge quantum well structures in an external electric field	p. 11
Room-temperature luminescence form Si/Ge single quantum well diodes grown by molecular beam epitaxy	p. 15
The growth and characterization of Si[subscript 1-x]Ge[subscript x] multiple quantum wells on Si(110) and Si(111)	p. 21
Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure	p. 27
Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations	p. 31
Anomalous spectral shift of photoluminescence from MBE-grown strained Si[subscript 1-x]Ge[subscript x]/Si quantum wells mediated by atomic hydrogen	p. 36
Field-driven blue shift of excitonic photoluminescence in Si-Ge quantum wells and superlattices	p. 40
Theory of electronic and optical properties of Si/Ge superlattices	p. 45
Interface morphology and relaxation in high temperature grown Si[subscript 1-x]Ge[subscript x]/Si superlattices	p. 52
Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing	p. 57
X-ray reciprocal space mapping of Si/Si[subscript 1-x]Ge[subscript x] heterostructures	p. 61
Test of Vegard's law in thin epitaxial SiGe layers	p. 68
Spectroscopic ellipsometry for Si[subscript (1-x)]Ge[subscript x] characterization: comparison with other experimental techniques	p. 73
Characterization of highly boron-doped Si, Si[subscript 1-x]Ge[subscript x] and Ge layers by high-resolution transmission electron microscopy	p. 80
Magnetotransport of epitaxial Si/Ge layers on Si	p. 85
Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique	p. 90
Thickness measurements Si[subscript 1-x]Ge[subscript x] thin layers deposited on Si mesa structures	p. 96
Device quality of in situ plasma cleaning for silicon molecular beam epitaxy	p. 100
Electrical characteristics of [actual symbol not reproducible] structures by gas-source MBE	p. 105
Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon	p. 109
The role of strian in silicon-based molecular beam epitaxy	p. 113
Photoluminescence characterization of Si[subscript 1-x]Ge[subscript x] relaxed "pseudo-substrates" grown on Si	p. 116
Relaxed Si[subscript 1-x]Ge[subscript x] films with reduced dislocation densities grown by molecular beam epitaxy	p. 121
Relaxation of compositionally graded Si[subscript 1-x]Ge[subscript x] buffers: a TEM study	p. 126
Dislocation patterning and nanostructure engineering in compositionally graded Si[subscript 1-x]Ge[subscript x]/Si layer systems	p. 132
Strain relaxation, and misfit dislocations in compositionally graded Si[subscript 1-x]Ge[subscript x] layers on Si(001)	p. 137
Comparison of different Si/Ge alloy buffer concepts for [actual symbol not reproducible] superlattices	p. 142
Ge[superscript +] ion implantation - a competing technology?	p. 147
Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth	p. 161
In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD	p. 168
Magnetron sputter epitaxy of Si/Ge heterostructures	p. 172
Crystallization of a-Si[subscript 1-x]Ge[subscript x]: decomposition and modulated structure formation features	p. 177
Strain compensation in ternary [actual symbol not reproducible] films	p. 181
Modeling of facet growth on patterned Si substrate in gas source MBE	p. 185
Effect of RTCVD growth conditions on the crystal quality of pseudomorphic [actual symbol not reproducible] films	p. 190
Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures	p. 195
Plasma-enhanced evaporation of SiO[subscript 2] films for MBE-grown MOS devices	p. 201
High speed SiGe heteropolar transitors	p. 207
Si/Si[subscript 1-x]Ge[subscript x] heterojunction bipolar transistors for microwave power applications	p. 215
Assessment of intervalley f-scattering time constants in Si/SiGe heterostructures	p. 222
Photo-induced intersubband absorption in Si/SiGe quantum wells	p. 227
Influence of base dopant out-diffusion into the emitter in Si/SiGe heterojunction bipolar transistor using Monte Carlo simulations	p. 231
Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing	p. 236
Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system	p. 242
Silicon nanostructure devices	p. 248
Islands formation conditions in silicon-germanium alloys grown by MBE	p. 255
Self-organized MBE growth of Ge-rich SiGe dots on Si(100)	p. 260
Photoluminescence investigation on growth mode changeover of Ge on Si(100)	p. 265
Local epitaxy of Si/SiGe wires and dots	p. 270
Silicon molecular beam epitaxial growth on ultra-small mesa structures	p. 276
Photoluminescence and Raman spectroscopy of Si/Si[subscript 1-x]Ge[subscript x] quantum dots	p. 280
A silicon molecular beam epitaxy system dedicated to device-oriented material research	p. 285
Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE	p. 295
Investigation of Si-substrate preparation for GaAs-on-Si MBE growth	p. 300
Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source	p. 304
Influence of self-assembling growth on the shape and the orientation of silicon nanostructures	p. 308
Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature	p. 312
Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth	p. 317
Segregation of interface carbon during silicon epitaxial growth by UHV-CVD	p. 323
In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems	p. 327
Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy	p. 333
Growth of low-dimensional structures on nonpolar patterned substrates	p. 338
Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties	p. 344
Arsenic doping in Si-MBE using low energy ion implantation (LEII)	p. 349
Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications	p. 353
Radiative recombination processed in p-type modulation-doped SiGe quantum wells and Si epilayers	p. 362
Electron mobility enhancement in a strained Si channel	p. 367
Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy	p. 373
Hole confinement in boron [delta]-doped Si quantum wells studied by admittance spectroscopy	p. 378
Observation of piezoelectric-like behaviour in coherently strained B-doped (100)SiGe/Si heterostructures	p. 382
Optical and electronic properties of SiGeC alloys grown on Si substrates	p. 386
Early stages of growth of [beta]-SiC on Si by MBE	p. 392
MBE growth of ternary SnGeSiGe superlattices	p. 400
Strain-stabilized structures on silicon grown with MBE	p. 405
Optical properties of bulk and multi-quantum well SiGe:C heterostructures	p. 410
Thermal stability of [actual symbol not reproducible] heterostructures grown by rapid thermal chemical vapor deposition	p. 414
A particular epitaxial Si[subscript 1-y]C[subscript y] alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy	p. 420
Molecular beam epitaxial grown Si[subscript 1-x]C[subscript x] layers on Si(001) as a substrate for MWCVD of diamond	p. 426
Synthesis of epitaxial Si[subscript 1-y]C[subscript y] alloys on Si(001) with high level of non-usual substitutional carbon incorporation	p. 431
Realization of [actual symbol not reproducible] heterostructures by pulsed laser induced epitaxy of C[superscript +] implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)	p. 436
Author index	p. 442
Subject index	p. 449
Table of Contents provided by Blackwell. All Rights Reserved.

Please wait while the item is added to your bag...

FREE SHIPPING

Amazon no longer offers textbook rentals. We do!

Selected Topics in Group IV and II-VI Semiconductors : Proceedings of Symposium L - 6th International Symposium on Silicon Molecular Beam Epitazy, and Symposium D on Purification, Doping and Defects in II-VI Materials of the 1995 E-MRS Spring Conference,

Summary

Table of Contents

Supplemental Materials