Semiconductor Device and Failure Analysis Using Photon Emission Microscopy

Note: Supplemental materials are not guaranteed with Rental or Used book purchases.

ISBN: 9780471492405 | 047149240X
Cover: Hardcover
Copyright: 12/22/2000

Buy New

Print on Demand: 2-4 Weeks. This item cannot be cancelled or returned.

$273.07

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference: * Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability. * Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM * Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors. Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.

Preface

xiii

Introduction

(26)

Device Technology Trends and Challenges to Failure Analysis

(3)

Integrated Circuit Yield, Defects and Reliability Issues

(2)

Photon Emission Microscopy of Silicon Devices

(12)

Photon emission microscopy as a fault localisation technique and classification of electrical leakage failures

(2)

Photon emission from failed devices and defects

(3)

Luminescence from biased p-n junctions and related structures

(3)

Hot-carrier luminescence

(3)

Electroluminescence from dielectric films

(1)

Photon Emission Microscopy of III-V Semiconductor and Other Devices

(2)

Modes of Operation in Photon Emission Microscopy

(2)

Summary

(5)

References

(5)

Theory of Light Emission in Semiconductors

(16)

Introduction

(1)

Radiative Recombination Rate and Efficiency

(3)

Radiative and Nonradiative Transitions

(10)

Interband direct and indirect transitions

(2)

Exciton recombination

(1)

Transition between a band and an impurity level

(1)

Intraband transition

(2)

Auger effect

(1)

Recombination through defects

(2)

Surface and interface recombination

(1)

Multiple-phonon emission

(1)

Summary

(2)

References

(1)

Instrumentation Aspects of the Photon Emission Microscope

(24)

Introduction

(1)

Photon Detection and Imaging

(16)

Vidicons

(1)

Microchannel plate image intensifiers

(1)

Charge-coupled devices and imaging arrays

(7)

Near-infrared and infrared photon detectors

(5)

Photon counting

(1)

Optical Design Considerations

(2)

Qualitative Imaging Modes in Photon Emission Microscopy

(1)

Spectral Analysis Using Optical Filters and Monochromators

(1)

Summary

(4)

References

(3)

Backside Photon Emission Microscopy

(14)

Introduction

(1)

Factors Affecting Backside Photon Imaging

(7)

Optical absorption

(2)

Electrooptical effects

(2)

Doping concentration effect

(1)

Surface roughness scattering

(1)

Spherical aberration effect

(1)

Backside Sample Preparation Techniques

(3)

Global sample thinning

(1)

Localised sample thinning

(2)

Navigation Tools in Backside Analysis of Failed Devices

(1)

Summary

(3)

References

(2)

Spectroscopic Photon Emission Microscopy

(26)

Introduction

(1)

Alternative Methods for Spectroscopic Photon Emission Analysis

(1)

Optical Elements Used in Spectroscopic Analysis

(3)

Optical filters

(1)

Monochromators

(1)

Wavelength-dispersive prism, focusing lens and position-sensitive detector

(1)

Calibration for Spectroscopic Measurements

(5)

Need for calibration

(1)

Wavelength calibration

(1)

System response calibration

(4)

Spectral Normalisation Schemes

(3)

Bias-dependent spectral variations and the need for spectral normalisation

(1)

Area normalisation and the λ1.0 wavelength characterisation parameter

(1)

Cumulative area normalisation and the λ50% wavelength characterisation parameter

(1)

Results of Spectral Normalisation

(10)

Normalised spectra of biased p-n junctions

(1)

Normalised spectra of n-channel MOS transistors

(3)

Bias-dependence of the wavelength parameters

(3)

Distribution of the wavelength parameters and relation to device electric fields

102

(2)

Summary

104

(3)

References

105

(2)

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing

107

(66)

Introduction

107

(1)

Hot-Carrier Effects in MOSFETs

108

(24)

Channel electric field

108

(2)

Substrate current model

110

(2)

Hot-carrier injection mechanisms

112

(1)

Channel hot-electron injection

113

(2)

Drain-avalanche hot-carrier injection

115

(2)

Secondarily generated hot-electron injection

117

(2)

Substrate hot-carrier injection

119

(1)

Fowler-Nordheim tunnelling injection

120

(1)

Direct tunnelling injection

120

(1)

Hot-carrier injection in p-channel MOSFETs

121

(1)

Hot-carrier degradation effects and bias dependency

121

(1)

Hot-carrier degradation in n-channel MOSFETs

121

(2)

Hot-carrier degradation in p-channel MOSFETs

123

(3)

Hot-carrier stress testing and device lifetime

126

(2)

Hot-carrier-resistant device structures

128

(1)

Drain-engineered hot-carrier-resistant device structures

129

(2)

Gate-oxide engineering for improved hot-carrier reliability

131

(1)

Spectral Characteristics of Photon Emission from MOSFETs

132

(13)

Light absorption in the gate

132

(2)

Bias-dependent spectral charcteristics

134

(2)

Photon and electron energy distributions

136

(4)

Substrate current dependence of total emission intensity

140

(5)

A Theoretical Treatment of Photon Emission from MOSFETs

145

(7)

The photon emission model based on the bremsstrahlung radiation mechanism

145

(3)

Discussion on the bremsstrahlung photon emission model and alternative models

148

(4)

Photon Emission and MOSFET Degradation under Hot-Carrier Stressing

152

(13)

Effect of different hot-carrier stressing conditions on photon emission

154

(3)

Effect of different drain-engineered structures on photon emission

157

(4)

Spectral analysis and discussion

161

(4)

Summary

165

(8)

References

167

(6)

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing

173

(36)

Introduction

173

(1)

Electrostatic Discharge (ESD) Stress and Device Operation

174

(10)

ESD models and failure mechanisms

175

(2)

Transistor operation under ESD conditions

177

(1)

MOS transistor

177

(3)

Thick field-oxide device

180

(1)

Silicon-controlled rectifier

181

(1)

ESD protection circuitry in MOS devices

182

(1)

Input protection with thick field-oxide device

183

(1)

Input protection with silicon-controlled rectifier

183

(1)

Transmission Line Pulsing Set-Ups for High-Field Impulse Stressing

184

(7)

Single-pulsing transmission line set-up

185

(1)

Continuous-pulsing transmission line set-up

186

(1)

Test device description and biasing conditions

187

(1)

Current-voltage characteristics of grounded-gate nMOSFETs

188

(3)

Photon Emission from N-Channel MOSFETs in the Snapback Breakdown Region

191

(7)

Light emission from grounded-gate nMOSFETs biased into snapback breakdown

191

(2)

Photon emission spectroscopy of grounded-gate nMOSFETs biased into snapback breakdown

193

(2)

Distribution of the wavelength parameters and relation to device electric fields

195

(2)

Device degradation during measurement

197

(1)

Total Photon Emission Intensity and Carrier Temperature

198

(6)

Total photon emission intensity

198

(2)

Photon energy distribution

200

(2)

Carrier temperature

202

(2)

Summary

204

(5)

References

204

(5)

Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures

209

(54)

Introduction

209

(1)

Degradation and Breakdown of Silicon Dioxide

210

(21)

Oxide breakdown models

212

(1)

Hole-induced breakdown model

212

(3)

Electron-trapping model

215

(2)

Interface-softening model

217

(3)

Other oxide breakdown models

220

(3)

Microscopic models of oxide damage

223

(2)

Measurement techniques for oxide breakdown

225

(1)

Constant-voltage stress

226

(1)

Constant-current stress

226

(1)

Charge-to-breakdown

227

(1)

Soft breakdown of ultra-thin gate oxides

228

(3)

Electrical Behaviour of MOS Capacitors under High-Field Impulse Stressing

231

(20)

Current-time and capacitance-voltage characteristics

233

(1)

Trap generation under high-field impulse stress

234

(14)

Polarity effect of the high-field impulse stress

248

(1)

Latent damage

249

(2)

Spectral Characteristics of Photon Emission from MOS Capacitors

251

(5)

Photon emission under depletion/inversion bias

253

(1)

Photon emission under accumulation bias

254

(2)

Summary

256

(7)

References

257

(6)

Index

263

Please wait while the item is added to your bag...

FREE SHIPPING

Amazon no longer offers textbook rentals. We do!

Semiconductor Device and Failure Analysis Using Photon Emission Microscopy

Summary

Author Biography

Table of Contents

Supplemental Materials