Sige Based Technologies: Proceedings of Symposium a on Sige Based Technologies of the 1992 E-Mrs Spring Conference : Strasbourg, France, June 2-4, 1
, by Kasper, E.; Shiraki, Y.; Pearsall, Thomas P.
- ISBN: 9780444899057 | 0444899057
- Cover: Hardcover
- Copyright: 12/1/1992
| Quantum Wells | |
| Systematic blue shift of exciton luminescence in strained Si[subscript 1-x]Ge[subscript x]/Si quantum well structures grown by gas source silicon molecular beam epitaxy | p. 1 |
| Photoluminescence of SiGe/Si quantum wells prepared by LPCVD | p. 5 |
| Photoluminescence of confined excitations in MBE-grown Si[subscript 1-x]Ge[subscript x]/Si(100) single quantum wells | p. 10 |
| Magnetotransport studies of remote doped Si/Si[subscript 1-x]Ge[subscript x] heterostructures grown on relaxed SiGe buffer layers | p. 15 |
| Electron intersubband absorption in modulation and well-doped Si/Si[subscript 1-x]Ge[subscript x] multiple quantum wells | p. 20 |
| Hole transport in Si[subscript 0.8]Ge[subscript 0.2] quantum wells at low temperatures | p. 24 |
| Band gap luminescence in pseudomorphic Si[subscript 1-x]Ge[subscript x] quantum wells grown by molecular beam epitaxy | p. 27 |
| Growth Methods | |
| The deposition of Si-Ge strained layers from GeH[subscript 4], SiH[subscript 2]Cl[subscript 2], SiH[subscript 4] and Si[subscript 2]H[subscript 6] | p. 30 |
| Chemical vapour deposition of epitaxial SiGe thin films from SiH[subscript 4]-GeH[subscript 4]-HCl-H[subscript 2] gas mixtures in an atmospheric pressure process | p. 34 |
| Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition | p. 38 |
| A comparative study of heavy boron doping in silicon and Si[subscript 1-x]Ge[subscript x] layers grown by molecular beam epitaxy | p. 42 |
| Photoluminescence and X-ray diffraction study of highly uniform silicon and Ge[subscript x]Si[subscript 1-x] epitaxial layers | p. 46 |
| Low temperature silicon and Si[subscript 1-x]Ge[subscript x] epitaxy by rapid thermal chemical vapour deposition using hydrides | p. 52 |
| Crystallization of amorphous Ge[subscript x]/Si[subscript 1-x] films on SiO[subscript 2] | p. 57 |
| Growth and Characterization | |
| Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition | p. 60 |
| Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence | p. 69 |
| SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry | p. 73 |
| Evolution of surface morphology and strain during SiGe epitaxy | p. 78 |
| Photoreflectance study of strained (001) Si[subscript 1-x]Ge[subscript x]/Si layers | p. 85 |
| Band edge and deep level photoluminescence of fully strained Si[subscript 1-x]Ge[subscript x]/Si alloys | p. 89 |
| Observation of electroluminescence from pseudomorphic Si[subscript 1-x]Ge[subscript x] alloy layers | p. 94 |
| Surfaces and Interfaces | |
| Atomistic processes of surface segregation during Si-Ge MBE growth | p. 98 |
| Germanium segregation induced reconstruction of SiGe layers deposited on Si(100) | p. 104 |
| Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane | p. 108 |
| Effect of a surfactant on the growth of Si/Ge heterostructures | p. 112 |
| The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE | p. 116 |
| Processing/Devices | |
| Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic Ge[subscript x]Si[subscript 1-x]/Si | p. 120 |
| Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source | p. 126 |
| Molecular beam epitaxy grown Si/Si[subscript 0.87]Ge[subscript 0.13] heterojunction bipolar transistors with ideal I-V characteristics | p. 132 |
| 50 GHz Si[subscript 1-x]Ge[subscript x] heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy | p. 137 |
| A comparison of the behaviour of Si[subscript 0.5]Ge[subscript 0.5] alloy during dry and wet oxidation | p. 141 |
| UV-assisted oxidation of SiGe strained layers | p. 145 |
| Boron-doped Si/Ge superlattices and heterostructures | p. 150 |
| Electrical characterization of Si-Ge heterostructure bipolar transistors | p. 154 |
| Strain relaxation in epitaxial Si[subscript 1-x]Ge[subscript x]/Si(100) layers induced by reaction with palladium | p. 157 |
| Strain/Defects | |
| The energy of systems of misfit dislocations in epitaxial strained layers | p. 161 |
| 1 MeV electron irratiation induced degradation of boron-doped strained Si[subscript 1-x]Ge[subscript x] layers | p. 166 |
| Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon | p. 173 |
| Crystallization kinetics of boron- and germanium-implanted [100] Si: a balance between doping and strain effects | p. 176 |
| Stress in Si[subscript 1-x]Ge[subscript x] films prepared by ion beam sputtering: origin and relaxation | p. 180 |
| Elastic strain energy of graded Si[subscript 1-x]Ge[subscript x] buffer layers | p. 184 |
| Experimental study of Si-Ge tetrahedral solid solution in Ni-Co-Mg talcs | p. 189 |
| Porous Silicon | |
| Electroluminescent performance of porous silicon | p. 196 |
| Bright visible photoluminescence in thin silicon films | p. 200 |
| Ultrathin Si/Ge Superlattices (Workshop) | |
| Quantitative theory of optical properties of Si-Ge heterostructures | p. 205 |
| Electronic properties of strained Si/Ge superlattices: tight binding approach | p. 209 |
| Si/Ge superlattice embedded in silicon and germanium: electronic structure and transition probabilities | p. 212 |
| Buffer concepts of ultrathin Si[subscript m]Ge[subscript n] superlattices | p. 215 |
| Characterization of short-period Si[subscript m]Ge[subscript n] superlattices by high-resolution transmission electron microscopy and X-ray diffraction | p. 221 |
| Photoluminescence studies of Si/Si[subscript 1-x]Ge[subscript x] quantum wells and Si[subscript m]Ge[subscript n] superlattices | p. 227 |
| Photoluminescence from short-period strained-layer superlattices of (Si[subscript 6]Ge[subscript 4])[subscript p] after hydrogen passivation | p. 234 |
| Optical and electrical characterization of Si/Ge superlattices | p. 237 |
| Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices | p. 243 |
| Optical transitions in strained Ge/Si superlattices | p. 246 |
| In-plane and vertical high-frequency conductivity in Si/Ge short-period superlattices | p. 251 |
| Differential optical absorption spectroscopy and X-ray characterization of symmetrically strained Ge-Si superlattices | p. 254 |
| Ambient pressure scanning tunneling microscope imaging of hydrogen-passivated Si/Ge multilayers | p. 259 |
| Photocapacitance studies of short-period Si/Ge superlattices | p. 265 |
| In-plane Raman scattering of [001]-grown Si/Ge superlattices | p. 269 |
| Author Index | p. 274 |
| Subject Index | p. 276 |
| Table of Contents provided by Blackwell. All Rights Reserved. |
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