Silicon Carbide 2008

, by Law, M.; Pawlak, B. j.; Pelaz, M. l.; Suguro, K.

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ISBN: 9781605110394 | 1605110396
Cover: Hardcover
Copyright: 7/31/2008

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Silicon cabride (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments.

Materials Research Society Symposium Proceedings
Bulk Material and Characterization
Bulk Growth of SiC	p. 3
Alternative Routes to Porous Silicon Carbide	p. 15
Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC	p. 23
High-Resolution Photoinduced Transient Spectroscopy of Defect Centers in Undoped Semi-Insulating 6H-SiC	p. 33
Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC	p. 45
Links Between Etching Grooves of Partial Dislocations and Their Characteristics Determined by TEM in 4H SiC	p. 53
Point Defects in SiC	p. 65
Determination of the Core-Structure of Shockley Partial Dislocations in 4H-SiC	p. 77
Propagation and Density Reduction of Threading Dislocations in SiC Crystals During Sublimation Growth	p. 83
Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method	p. 89
Stress Mapping of SiC Wafers by Synchrotron White Beam X-ray Reticulography	p. 95
Effect of Annealing Temperature on SiC Wafer Bow and Warp	p. 101
Epitaxial Material and Characterization
Residual Stress in CVD-Grown 3C-SiC Films on Si Substrates	p. 109
Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices	p. 115
Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-Loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy	p. 123
Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices	p. 129
Improved SiC Epitaxial Material for Bipolar Applications	p. 141
Lateral/Vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations	p. 151
Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive	p. 157
Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates	p. 163
Epitaxial Growth on 2[degrees] Off-axis 4H SiC Substrates with Addition of HCl	p. 169
High-Frequency Electron Paramagnetic Resonance Study of the As-Deposited and Annealed Carbon-Rich Hydrogenated Amorphous Silicon-Carbon Films	p. 175
Characterization and Growth Mechanism of B[subscript 12]As[subscript 2] Epitaxial Layers Grown on (1-100) 15R-SiC	p. 181
Device Processing and Characterization
Simultaneous Formation of n- and p-Type Ohmic Contacts to 4H-SiC Using the Binary Ni/Al System	p. 189
Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS Diodes	p. 195
Performance of SiC Microwave Transistors in Power Amplifiers	p. 203
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500[degrees]C	p. 209
Effect of SiC Power DMOSFET Threshold-Voltage Instability	p. 215
SiC-Based Power Converters	p. 221
3D Thermal Stress Models for Single Chip SiC Power Sub-Modules	p. 233
MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270[degrees]C	p. 239
Impact Ionization in Ion Implanted 4H-SiC Photodiodes	p. 245
Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices Due to Basal Plane Dislocations	p. 251
Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs	p. 257
Spontaneous and Piezoelectric Polarization Effects on the Frequency Response of Wurtzite Aluminium Gallium Nitride/Silicon Carbide Heterojunction Bipolar Transistors	p. 263
Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs	p. 269
Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography	p. 273
Author Index	p. 279
Subject Index	p. 283
Table of Contents provided by Blackwell. All Rights Reserved.

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Silicon Carbide 2008

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