Spintronic Materials And Technology

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ISBN: 9780849392993 | 0849392993
Cover: Hardcover
Copyright: 10/25/2006

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Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry. Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developments.Featuring contributions from active researchers and leading experts, the book chronicles the main research challenges in spintronics. It first depicts the different classes of materials systems currently under investigation for use in spintronic devices. The contributors also address issues concerning the operation of spintronic devices, such as the new principle for future devices that use spin-polarized current. This promises to enable switching of individual spin components of the device while avoiding crosstalk at the nanoscale. The book concludes with descriptions of both Si and III-V semiconductor-based spin transistors and the integration of spin technology with photonics.The second-generation spintronic devices discussed in Spintronic Materials and Technology will not only improve the existing capabilities of electronic transistors, but will enable future computers to run faster and consume less power.

Part I Spintronic Materials and Characterizations

(144)

Chapter 1 Magneto-Optical Studies of Magnetic Oxide Semiconductors

(34)

G.A. Gehring, A.J. Behan, H.J. Blythe, A.M. Fox, R.M. Ibrahim, A. Mokhtari, and J.R. Neal

1.1 Introduction

(1)

1.2 Doped ZnO

(5)

1.3 Optical Properties

(2)

1.4 Macroscopic Theory

(5)

1.4.1 Magneto-Optic Theory in Terms of the Dielectric Tensor

(4)

1.4.2 Magneto-Optic Theory in Terms of the Optical Conductivity

(1)

1.5 Measurement of the Off-Diagonal Components of the Dielectric Tensor

(3)

1.5.1 Measurement of Magneto-Optic Spectra

(1)

1.5.2 Measurement of epsilonxx

(1)

1.6 Classical and Quantum Theory of Absorption

(3)

1.7 Magneto-Optical Response of II-VI Dilute Magnetic Semiconductors

(4)

1.7.1 Cubic Semiconductors

(1)

1.7.2 Wurtzite Semiconductors

(3)

1.8 Magneto-Optic Data on Doped ZnO

(6)

1.8.1 Measurements of α and β

(1)

1.8.2 Magnetic Circular Dichroism in Ferromagnetic Samples

(1)

1.8.2.1 ZnO:Co

(1)

1.8.2.2 ZnO:Mn

(1)

1.8.2.3 ZnO:Ni

(1)

1.8.2.4 ZnO:V and ZnO:Ti

(2)

1.9 Conclusions

(1)

Acknowledgments

(1)

References

(4)

Chapter 2 Synthesis and Characterization of Wide Band-Gap Semiconductor Spintronic Materials

(20)

Rong Zhang and Xiangqian Xiu

2.1 Introduction

(1)

2.2 Semiconductor Spintronic Materials

(1)

2.3 Synthesis of Wide Band-Gap Semiconductor Spintronic Materials

(12)

2.3.1 GaN and GaP

(1)

2.3.1.1 MBE

(1)

2.3.1.2 Ion Implantation

(1)

2.3.1.3 HVPE

(2)

2.3.2 SiC

(1)

2.3.3 ZnO

(5)

2.4 Mechanisms of Ferromagnetism

(1)

2.5 Summary

(1)

Acknowledgments

(1)

References

(4)

Chapter 3 Magnetic Properties of (Ga,Mn)As-Based Magnetic Semiconductors

(20)

Maciej Sawicki

3.1 Introduction

(1)

3.2 Curie Temperature

(3)

3.3 Origin of Magnetic Anisotropy in Ferromagnetic Zinc-Blende DMSs

(2)

3.4 Reorientations of Magnetic Easy Axis

(5)

3.5 In-Plane Magnetic Anisotropy

(5)

3.6 Conclusions

(1)

Acknowledgments

(1)

References

(3)

Chapter 4 Soft X-Ray Resonant Magnetic Scattering from Magnetic Nanostructures

(32)

Gerrit van der Laan

4.1 Introduction

(3)

4.2 Magnetic Stripe Domain Formation in FePd Alloys

(3)

4.2.1 Sample Preparation

(1)

4.2.2 Magnetic Anisotropy and MFM Images

(2)

4.3 Micromagnetic Modeling

(1)

4.4 Principles of X-Ray Resonant Scattering

(3)

4.4.1 Scattering Amplitude

(1)

4.4.2 Scattering Intensity

(1)

4.4.3 Linear Polarization

(1)

4.4.4 Circular Polarization

(1)

4.4.5 Micromagnetic Modeling of the Scattering

(1)

4.5 Experimental SXRMS Results for FePd Films

(2)

4.6 Coherence of X-Rays

(3)

4.6.1 Speckle Pattern

(1)

4.6.2 X-Ray Scattering Using a CCD Camera

(1)

4.7 Coherent X-Ray Scattering from FePd Nanowire

(3)

4.7.1 2D Image of the Magnetic Scattering

(2)

4.7.2 Intensity Fluctuation

(1)

4.8 Oscillatory Behavior of 5d Magnetic Moments in Fe/W Multilayers

(1)

4.9 Experimental Results on Fe/W Multilayers

(2)

4.10 Analysis Method

(2)

4.11 Discussion of the Fe/W Multilayer Results

101

(1)

4.12 Orbital Ordering in Manganites

101

(2)

4.13 Conclusions

103

(2)

Acknowledgments

105

(1)

References

105

(4)

Chapter 5 The Effect of Ru on Magnetization Switching and CPP-GMR Enhancement

109

(16)

N. Tezuka, S. Abe, Y Jiang, and K. Inomata

5.1 Introduction

109

(2)

5.2 Domain Structures and Hsw for SyAFs (Co90Fe10/Ru/Co90Fe10)

111

(4)

5.3 CIMS in ESPV Nanofabricated Pillars and Critical Density Reduction by Insertion of a Thin Ru Layer

115

(4)

5.4 CPP-GMR Ratio Enhancement by Inserting Ru Cap Layer

119

(3)

5.5 Summary

122

(1)

Acknowledgment

122

(1)

References

123

(2)

Chapter 6 The Spin-Dependent Interfacial Transparency

125

(20)

Ke Xia

6.1 Introduction

125

(2)

6.2 Transport Calculation Based on the First-Principles Method

127

(5)

6.2.1 The Tight-Binding Hamiltonian

128

(1)

6.2.2 Eigenstates in the Leads

129

(1)

6.2.3 Scattering Problem

130

(2)

6.2.4 Interface Resistance

132

(1)

6.3 Co/Cu Interface

132

(5)

6.4 Fe/Ag ARPES

137

(5)

6.5 Summary and Outlook

142

(1)

Acknowledgment

143

(1)

References

143

(2)

Part II Spin Torque and Domain Wall Magneto Resistance

145

(98)

Chapter 7 Current-Driven Switching of Magnetization: Theory and Experiment

147

(32)

D.M. Edwards and F Federici

7.1 Introduction

147

(1)

7.2 Spin-Transfer Torque in a Simple Model

148

(5)

7.3 Phenomenological Treatment of Current-Induced Switching of Magnetization

153

(13)

7.4 Quantitative Theory of Spin-Transfer Torque

166

(6)

7.4.1 General Principles

166

(3)

7.4.2 Keldysh Formalism for Fully Realistic Calculations of the Spin-Transfer Torque

169

(3)

7.5 Quantitative Results for Co/Cu/Co(111)

172

(3)

7.6 Summary

175

(1)

Acknowledgments

175

(1)

References

175

(4)

Chapter 8 Domain Wall Scattering and Current-Induced Switching in Ferromagnetic Wires—Experiment

179

(24)

Serban Lepadatu and Yongbing Xu

8.1 Introduction

179

(3)

8.2 Nanofabrication

182

(2)

8.3 Nonlinear I-V at Zero Magnetic Field

184

(2)

8.4 Domain Walls in Patterned Structures

186

(3)

8.5 Current-Induced Domain Wall Movement

189

(2)

8.6 Domain Wall Scattering

191

(4)

8.7 Magnetoresistance and Measurement Current Interaction

195

(5)

8.8 Summary and Outlook

200

(1)

References

201

(2)

Chapter 9 Domain Wall Magnetoresistance in Magnetic Nanowires—Theory

203

(22)

R.L. Stamps, P.E. Falloon, V Gopat; D. Weinmann, and R.A. Jalabert

9.1 Background and Issues

203

(1)

9.2 Two-Band Model

204

(3)

9.3 Channel Blocking and Adiabaticity

207

(6)

9.4 Circuit Model

213

(6)

9.5 Current-Induced Torque

219

(2)

9.6 Summary and Outlook

221

(1)

Acknowledgment

222

(1)

References

222

(3)

Chapter 10 Introduction to a Theory of Current-Driven Domain Wall Motion

225

(18)

H. Kohno and G. Tatara

10.1 Introduction

225

(1)

10.2 Field-Driven Domain Wall Motion

226

(7)

10.2.1 Phenomenological Equation of Motion

226

(1)

10.2.2 Equations of Motion from Microscopic Spin Dynamics

227

(3)

10.2.3 Lagrangian Formulation

230

(3)

10.2.4 Dynamics Driven by Force

233

(1)

10.3 Current-Driven Domain Wall Motion

233

(6)

10.3.1 Interaction of Domain Wall and Electron Flow: an Intuitive Picture

234

(1)

10.3.2 Mathematical Derivation

235

(1)

10.3.3 Microscopic Calculation of Force and Torque

236

(1)

10.3.4 Dynamics Driven by Spin Transfer

237

(2)

10.4 Summary

239

(1)

Acknowledgments

240

(1)

References and Notes

240

(3)

Part III Spin Injection and Spin Devices

243

(172)

Chapter 11 Silicon-Based Spin Electronic Devices: Toward a Spin Transistor

245

(24)

Sarah M. Thompson, David Pugh, Duncan Loraine, Cindi L. Dennis, John F. Gregg, Chitnarong Sirisathitkul, and William Allen

11.1 Introduction

245

(2)

11.2 The Case for Silicon

247

(8)

11.2.1 Spin Relaxation in Semiconductors

248

(1)

11.2.2 Calculation of the Spin-Diffusion Length in n-Type Silicon

248

(5)

11.2.3 Comparison with the Spin-Diffusion Length in GaAs

253

(1)

11.2.4 Spin-Diffusion Length in p-Type Silicon

254

(1)

11.2.5 Spin Engineering in Silicon

254

(1)

11.3 Test Devices

255

(2)

11.4 A Silicon-Based Spin Transistor

257

(9)

11.4.1 Theoretical Basis

257

(2)

11.4.2 Design and Fabrication

259

(1)

11.4.3 Electrical Characterization

260

(6)

11.5 Conclusions

266

(1)

Acknowledgments

267

(1)

References

267

(2)

Chapter 12 Spin LEDs: Fundamentals and Applications

269

(20)

Willem Van Roy, Pol Van Dorpe, Vasyl F. Motsnyi, Gustaof Borghs, and Jo De Boeck

12.1 Introduction

269

(1)

12.2 Spin LEDs and Faraday vs. Oblique Hanle Geometries

270

(6)

12.3 Spin-Injection Contacts: Results and Bias Dependence

276

(5)

12.3.1 Oxide-Based Tunnel Injectors

276

(1)

12.3.2 Schottky Tunnel Injectors

277

(2)

12.3.3 Magnetic Semiconductor Injectors

279

(2)

12.4 Electrical Considerations

281

(5)

12.4.1 Bipolar Spin LEDs and Parasitic Hole Current

281

(2)

12.4.2 Performance in Unipolar Devices

283

(3)

12.5 Note on Nuclear Polarization Effects

286

(1)

References and Notes

286

(3)

Chapter 13 Spin Photoelectronic Devices Based on Fe and the Heusler Alloy Co,MnGa

289

(16)

M. Hickey, C.D. Damsgaard, S.N. Holmes, A. Husmann, I. Farrer; R.F Lee, D.A. Ritchie, J.B. Hansen, C.S. Jacobsen, G.A.C. Jones, and M. Pepper

13.1 Introduction

289

(2)

13.2 Experimental Issues for Spin LEDs

291

(3)

13.3 The Spin LED Based on MBE-Grown Fe

294

(3)

13.4 The Spin LED Based on the Heusler Alloy Co2MnGa

297

(2)

13.5 Point Contact Andreev Reflection Determination of Spin Polarization

299

(2)

13.6 Co2TiSn and Co2CrAl Heusler Alloys for Spintronic Devices

301

(1)

13.7 Summary and Outlook

302

(1)

References

303

(2)

Chapter 14 Electron Spin Filtering across a Ferromagnetic Metal/Semiconductor Interface Measured by Photoexcitation

305

(32)

A. Hirohata, S.J. Steinmuller; and J.A.C. Bland

14.1 Spin Electronics with Optical Methods

306

(7)

14.1.1 Spin Polarization in GaAs

306

(2)

14.1.2 Optical Spin Detection

308

(1)

14.1.2.1 Spin-Polarized Light-Emitting Diodes

308

(1)

14.1.2.2 Schottky Diodes

309

(1)

14.1.2.3 Metal/Oxide/Semiconductor (MOS) Structures

310

(1)

14.1.2.4 Spin-Polarized Scanning Tunneling Microscopy (SP-STM) for Spin Injection

310

(1)

14.1.3 Optical Spin Injection

311

(1)

14.1.3.1 SP-STM for Spin Detection

311

(2)

14.2 Photoexcitation Techniques

313

(5)

14.2.1 Polar Photoexcitation

313

(2)

14.2.2 Proposed Spin-Filtering Model

315

(1)

14.2.3 In-Plane Photoexcitation

316

(2)

14.3 Spin Filtering in FerromagneUSemiconductor Schottky Diodes

318

(9)

14.3.1 Sample Preparation

319

(1)

14.3.2 NiFe/GaAs Schottky Diodes

319

(1)

14.3.2.1 Semiconductor Doping Density Dependence

319

(1)

14.3.2.2 Ferromagnetic Layer Thickness Dependence

320

(1)

14.3.2.3 Spin Filtering at Ferromagnet/Semiconductor Interfaces

322

(2)

14.3.3 Fe/GaAs Schottky Diodes

324

(1)

14.3.4 Co/GaAs Schottky Diodes

324

(2)

14.3.5 Antiferromagnetic Cr/GaAs Schottky Diodes

326

(1)

14.4 Ballistic Spin Transport in Spin-Valve Structures

327

(7)

14.4.1 Sample Preparation and Characterization

328

(1)

14.4.1.1 Sample Preparation

328

(1)

14.4.1.2 MR and MOKE

328

(1)

14.4.1.3 Schottky Characteristics

328

(1)

14.4.2 Optical Magnetocurrent with Spin-Valve Structures

329

(1)

14.4.2.1 Angular Dependence

329

(1)

14.4.2.2 Photon-Energy Dependence

332

(2)

14.5 Summary

334

(1)

Acknowledgments

334

(1)

References and Notes

335

(2)

Chapter 15 Ferromagnetic Metal/III-V Semiconductor Hybrid Spintronic Devices

337

(34)

Ping Kwan J. Wong and Yongbing Xu

15.1 Introduction

338

(2)

15.2 Growth and Properties of Hybrid Materials

340

(12)

15.2.1 Fe/GaAs

345

(2)

15.2.2 Fe/InAs

347

(1)

15.2.3 Co/GaAs

348

(1)

15.2.4 Co/InAs

349

(1)

15.2.5 Ni/GaAs

349

(1)

15.2.6 FeCo/GaAs

350

(1)

15.2.7 Fe/GaSb

350

(1)

15.2.8 Fe/AlAs

351

(1)

15.2.9 Fe/InP

351

(1)

15.2.10 Fe/GaN

351

(1)

15.3 Spin Injection and Detection in Hybrid Devices

352

(11)

15.3.1 Historical Perspective

352

(1)

15.3.2 Theoretical Predictions

353

(1)

15.3.3 Electrical Spin Injection and Detection in Vertical Spintronic Hybrid Devices

354

(1)

15.3.3.1 Fabrication of Vertical Spintronic Hybrid Devices

355

(1)

15.3.3.2 Magnetotransport Measurement

357

(2)

15.3.4 Comparison of Spin Injection and Detection Techniques

359

(1)

15.3.4.1 Optical and Electrical Injection

359

(1)

15.3.4.2 Optical and Electrical Detection

360

(3)

15.4 Summary and Outlook

363

(2)

References

365

(6)

Chapter 16 The Spin-Valve Transistor

371

(44)

R. Jansen

16.1 Introduction

371

(3)

16.2 SVT

374

(27)

16.2.1 Basic Device Structure and Properties

374

(4)

16.2.2 Fabrication: Vacuum Metal Bonding

378

(3)

16.2.3 Physical Basis: Hot-Electron Spin Transport

381

(3)

16.2.4 Interface vs. Volume Scattering

384

(2)

16.2.5 Elastic vs. Inelastic

386

(2)

16.2.6 Temperature and Spin Waves

388

(6)

16.2.7 Device Output and Transfer Ratio

394

(4)

16.2.8 Noise

398

(3)

16.3 MTT

401

(9)

16.3.1 MTT and Tunnel Spin Polarization

404

(3)

16.3.2 MTT at Room Temperature

407

(3)

16.4 Avenues for Further Research

410

(1)

Acknowledgments

411

(1)

References

411

(4)

Index

415

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Spintronic Materials And Technology

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