Stress Induced Phenomena in Metallization:

The performance of computer chips has been improved by reducing the size of all components. With this continuing trend towards miniaturization in microelectronic devices, mechanical stresses have become a major reliability concern for the so-called back-end metallization, i.e., the wiring of a microchip made of Al and Cu alloy thin films. The mechanical stresses originate from film deposition, thermal mismatch or electromigration and may cause damage and ultimate failure of devices. This workshop provided a forum for in-depth discussions of fundamental aspects, such as thin film plasticity, as well as reliability issues related to these stress-induced phenomena.

Preface
Electromigration Early Failure Distribution in Submicron Interconnects	p. 3
Direct Measurement of Nucleation Times and Growth Rates of Electromigration Induced Voids	p. 15
Electromigration in Aluminum Damascene Lines	p. 27
Reliability Considerations for Copper Metallizations in ULSI Circuits	p. 39
Electromigration Modeling for Design Rule Development in Microelectronic Interconnects	p. 51
Modeling and Experimental Characterization of Electromigration in Interconnect Trees	p. 62
Diffusion-Induced Stresses	p. 77
In Situ Study of Interconnect Failures by Electromigration Inside a Scanning Electron Microscope	p. 89
Model Studies of Electromigration Using Indented Single-Crystal Aluminum Lines	p. 100
Local Strain Measurements during Electromigration	p. 112
Alloying Effects in Electromigration: What Controls the Electromigration Drift?	p. 126
Multiprobe Resistance Monitoring of Blech Pattern during Electromigration Testing	p. 138
3-D Finite Element Simulator for Migration Effects due to Various Driving Forces in Interconnect Lines	p. 150
In Situ Electromigration Damage in Al Interconnect Lines in the SEM and the Influence of Grain Orientation	p. 162
Effect of Grain Boundary/Interface Network on Cavity Growth under Interacted Migration Induced by Stress and Electric Current	p. 168
Stress-Induced and Electromigration Voiding in Nitride Passivated Al Interconnects	p. 174
In-Situ Studies of Electromigration Voiding in Passivated Copper Interconnects	p. 180
Molecular Dynamic Simulation of Grain Boundary Diffusivities and Vacancy Behavior in Al	p. 186
Nucleation, Growth, Interduffusion, and Adhesion of Metal Films on Polymers	p. 201
Thermoclastic Analysis of Thin Lines on Substrates	p. 217
Mechanical Strains and Stresses in Aluminum and Copper Interconnect Lines for 0.18 [mu]m Logic Technologies	p. 229
Anelastic Contributions to the Behavior of Freestanding Al Thin Films	p. 240
Stress in Electrochemically Deposited Copper	p. 249
Microstructural Analysis of Al Interconnects in Microprocessor Devices Using EFTEM	p. 255
Quantitative Texture Analysis of Cu Damascene Interconnects	p. 261
Stress Relaxation and Creep in Freestanding Thin Al Films Studied Using a Bulge Tester	p. 265
Grain Growth and Twinning in Copper Thin Films for ULSI Circuits	p. 271
Stress and Plasticity in Passivated Interconnect Lines	p. 277
Stress and Plasticity in Cu Thin Films	p. 283
Analysis of Local Strain in Aluminum Interconnects by Convergent Beam Electron Diffraction	p. 289
A Finite Element Study of Thermal Stress in Copper Interconnect	p. 298
Thermal Stresses in Cu and Damascene Submicron Line Structures	p. 304
Subject Index	p. 315
Author Index	p. 317
Table of Contents provided by Blackwell. All Rights Reserved.

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Stress Induced Phenomena in Metallization: Fifth International Workshop

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