Semiconductors and Organic Materials for

The symposium "UV, Blue and Green Light Emission from Semiconductor Materials" was part of the European Materials Research Society (E-MRS) Spring Meeting in Strasbourg, 4-7 June, 1996 and it was arranged to bring together specialists in growth, characterization and device fabrication of materials suitable for visible and UV optoelectronic applications. Although the main emphasis was on the development of semiconductor diode lasers, work was also presented on the progress of frequently doubling techniques which have an immediate application in commercial systems. The proceedings are divided into Part I and Part II reflecting the two streams of research based on II-VI semiconductors on the one hand and III-V GaN based semiconductors on the other hand. Although these two areas are competing vigorously for the realization of practical blue laser diodes, there are many common problems, particularly with doping and also the need for suitable substrates for the growth of lattice matched structures.The invited talks were presented by speakers from Japan, the USA and Europe with representation from both University and Industrial research groups. In particular, leaders in the development of blue lasers SONY (II-VI devices) and Nichia (GaN devices) provided important device papers alongside the excellent contributions on a wide range of topics covering epitaxial growth, optical structural and electrical measurements as well as problems of compensation of dopants and laser lifetimes.The symposium "Nonlinear Optical and Optoelectronics Organic Materials" dealt with the development of organic molecules and polymers as potential replacements for existing materials in electronic, optoelectronics and nonlinear optical devices.

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Preface
Nitrogen doping in ZnSe	p. 1
Effects of thermal annealing on properties of p-type ZnSe grown by MOVPE	p. 5
Compensation in p-type ZnSe based semiconductors	p. 9
ZnCdSe-ZnSe heterostructures grown by MOVPE	p. 16
Issues in molecular-beam epitaxy of ZnSe-based heterostructures for blue-green lasers	p. 21
Characterization of structural defects in MBE grown ZnSe	p. 29
In-situ reflectometry and RDS monitoring of atomic layer MBE of ZnSe and ZnTe on GaAs	p. 33
Resonant time-integrated and time-resolved photoluminescence in ZnSe-based heterostructures	p. 38
Intensity-dependent hot-phonon relaxation in ZnSe	p. 46
Device characteristics of green II-VI semiconductor lasers	p. 49
Room temperature laser operation of wide band-gap II-VI laser diodes	p. 55
Expected pronounced strengthening of II-VI lattices with beryllium chalcogenides	p. 60
Beryllium chalcogenides for ZnSe-based light emitting devices	p. 65
Optical nonlinearities and lasing in II-VI multiple quantum wells	p. 71
Theoretical investigation of new MgS-ZnSe structures	p. 79
Molecular beam epitaxy of Be-related II-VI compounds	p. 83
P-type doping of beryllium chalcogenides	p. 88
Electrical properties of light-emitting devices based on the II-VI compounds BeTe and BeMgZnSe	p. 92
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs	p. 97
Structural and optical properties of II-VI thin films and II-VI multilayered structures grown on silicon by laser ablation	p. 102
Semi-insulating and n-type substrates quality ZnSe and ZnSe[subscript 1-x]S[subscript x](x [ 0.15) produced by low temperature physical vapour transport	p. 108
Preparation of low resistive unintentionally doped n-type ZnSe	p. 112
Linear spectroscopy and exciton binding energies in (Zn, Cd)Se-ZnSe heterostructures	p. 116
Characteristic exciton properties of ZnS and ZnSe films	p. 121
Continuity conditions at semiconductor interfaces and in-heterostructure material physics	p. 126
Optical and magneto-optical differential spectroscopy of a ZnCdSe-ZnSe superlattice	p. 129
ZnSe-ZnCdSe single quantum wells: dispersion relations and absorption processes	p. 133
Potential applications of III-V nitride semiconductors	p. 137
Optimization of the MOVPE growth of GaN on sapphire	p. 147
Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations	p. 154
The key role of polarity in the growth process of (0001) nitrides	p. 157
Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire	p. 161
Analysis of vaporization kinetics of group-III nitrides	p. 167
Electronic structure and temperature dependence of excitons in GaN	p. 172
Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al[subscript 2]O[subscript 3]	p. 176
Optically detected electron nuclear double resonance on the residual donor in GaN	p. 181
Dynamics of excited states in GaN	p. 185
Shallow donors in epitaxial GaN	p. 192
Luminescence and absorption of GaN films under high excitation	p. 196
Optical gain in the nitrides: are there differences to other III-V semiconductors?	p. 201
Electron gas in modulation doped GaN/AlGaN structures	p. 207
Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction	p. 211
Properties of cubic GaN grown by MBE	p. 215
Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor	p. 222
MOVPE growth of InGaN on sapphire using growth initiation cycles	p. 228
Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy	p. 237
Donor acceptor pair in molecular beam epitaxy grown GaN	p. 242
GaN layer growth in relation to buffer deposition temperature	p. 246
Relaxation of thermal strain in GaN epitaxial layers grown on sapphire	p. 250
Plasma preconditioning of sapphire substrate for GaN epitaxy	p. 253
First laser diodes fabricated from III-V nitride based materials	p. 258
UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates	p. 265
Electric field effects on excitons in gallium nitride	p. 269
Microstructural studies of GaN grown on (0001) sapphire by MOVPE	p. 274
Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy	p. 279
III-V nitride materials: an approach through amorphous GaAs[subscript 1-x]N[subscript x] thin films	p. 283
Atomic structure of the GaN(100,110,111) surfaces	p. 288
Ti/Ni ohmic contacts to n-type gallium nitride	p. 292
Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates	p. 296
Author Index	p. 303
Subject Index	p. 305
Table of Contents provided by Blackwell. All Rights Reserved.

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Semiconductors and Organic Materials for Optoelectronic Applications

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